JPS53125776A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53125776A JPS53125776A JP4051777A JP4051777A JPS53125776A JP S53125776 A JPS53125776 A JP S53125776A JP 4051777 A JP4051777 A JP 4051777A JP 4051777 A JP4051777 A JP 4051777A JP S53125776 A JPS53125776 A JP S53125776A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- halogen
- implantation
- atomosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- -1 hydrogen compound Chemical class 0.000 abstract 1
- 238000002513 implantation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4051777A JPS53125776A (en) | 1977-04-08 | 1977-04-08 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4051777A JPS53125776A (en) | 1977-04-08 | 1977-04-08 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53125776A true JPS53125776A (en) | 1978-11-02 |
| JPS6110993B2 JPS6110993B2 (enExample) | 1986-04-01 |
Family
ID=12582699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4051777A Granted JPS53125776A (en) | 1977-04-08 | 1977-04-08 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53125776A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5077229A (en) * | 1988-10-10 | 1991-12-31 | Eniricerche S.P.A. | Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61157194U (enExample) * | 1985-03-20 | 1986-09-29 |
-
1977
- 1977-04-08 JP JP4051777A patent/JPS53125776A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5077229A (en) * | 1988-10-10 | 1991-12-31 | Eniricerche S.P.A. | Monolithic chemical sensor of the chemfet type incorporating an ion-selective membrane and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6110993B2 (enExample) | 1986-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS51144183A (en) | Semiconductor element containing surface protection film | |
| JPS5425178A (en) | Manufacture for semiconductor device | |
| JPS5331964A (en) | Production of semiconductor substrates | |
| JPS53125776A (en) | Manufacture for semiconductor device | |
| JPS5373072A (en) | Formation of oxidized film | |
| JPS5247676A (en) | Process for production of semiconductor device | |
| JPS542070A (en) | Manufacture for semiconductor element | |
| JPS53125773A (en) | Manufacture for semiconductor device | |
| JPS5247675A (en) | Process for production of semiconductor device | |
| JPS5421257A (en) | Manufacture for semiconductor device | |
| JPS525270A (en) | Photo-mask | |
| JPS53123678A (en) | Manufacture of field effect semiconductor device of insulation gate type | |
| JPS5335375A (en) | Heating method | |
| JPS5435683A (en) | Manufacture of semiconductor device | |
| JPS5273673A (en) | Production of semiconductor device | |
| JPS5384691A (en) | Production of semiconductor device | |
| JPS5377168A (en) | Production of semiconductor device | |
| JPS51112266A (en) | Semiconductor device production method | |
| JPS5272162A (en) | Production of semiconductor device | |
| JPS53114674A (en) | Manufacture for compound semiconductor device | |
| JPS5210070A (en) | Method for manufacturing silicon semiconductor device | |
| JPS5350670A (en) | Production of semiconductor device | |
| JPS52154361A (en) | Production of semiconductor device | |
| JPS53118990A (en) | Manufacture for resistor | |
| JPS53108385A (en) | Manufacture for semiconductor device |