JPS53110389A - Resistance forming method for semiconductor device - Google Patents

Resistance forming method for semiconductor device

Info

Publication number
JPS53110389A
JPS53110389A JP2473977A JP2473977A JPS53110389A JP S53110389 A JPS53110389 A JP S53110389A JP 2473977 A JP2473977 A JP 2473977A JP 2473977 A JP2473977 A JP 2473977A JP S53110389 A JPS53110389 A JP S53110389A
Authority
JP
Japan
Prior art keywords
semiconductor device
forming method
resistance forming
resistance
conductive region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2473977A
Other languages
Japanese (ja)
Inventor
Kenji Nishi
Masae Oota
Tadashi Uchiumi
Itsuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2473977A priority Critical patent/JPS53110389A/en
Publication of JPS53110389A publication Critical patent/JPS53110389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To ensure a high sheet resistance free from dispersion, by obtaining the resistance through formation of the second conductive region with the ion injecting method within the second epitaxial layer surrounded by the first conductive region.
JP2473977A 1977-03-09 1977-03-09 Resistance forming method for semiconductor device Pending JPS53110389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2473977A JPS53110389A (en) 1977-03-09 1977-03-09 Resistance forming method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2473977A JPS53110389A (en) 1977-03-09 1977-03-09 Resistance forming method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53110389A true JPS53110389A (en) 1978-09-27

Family

ID=12146512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2473977A Pending JPS53110389A (en) 1977-03-09 1977-03-09 Resistance forming method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53110389A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153366A (en) * 1979-05-18 1980-11-29 Nec Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153366A (en) * 1979-05-18 1980-11-29 Nec Corp Semiconductor device

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