JPS51123562A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS51123562A
JPS51123562A JP50048379A JP4837975A JPS51123562A JP S51123562 A JPS51123562 A JP S51123562A JP 50048379 A JP50048379 A JP 50048379A JP 4837975 A JP4837975 A JP 4837975A JP S51123562 A JPS51123562 A JP S51123562A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
semiresistance
change
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50048379A
Other languages
English (en)
Japanese (ja)
Inventor
Teruaki Aoki
Takeshi Matsushita
Tadayoshi Mifune
Motoaki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50048379A priority Critical patent/JPS51123562A/ja
Priority to GB15649/76A priority patent/GB1532456A/en
Priority to US05/678,417 priority patent/US4081292A/en
Priority to CA250,484A priority patent/CA1059241A/en
Priority to FR7611730A priority patent/FR2309039A1/fr
Priority to NL7604238A priority patent/NL7604238A/xx
Priority to DE19762617398 priority patent/DE2617398A1/de
Publication of JPS51123562A publication Critical patent/JPS51123562A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP50048379A 1975-04-21 1975-04-21 Production method of semiconductor device Pending JPS51123562A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP50048379A JPS51123562A (en) 1975-04-21 1975-04-21 Production method of semiconductor device
GB15649/76A GB1532456A (en) 1975-04-21 1976-04-15 Methods of making passivating layers for semiconductor devices
US05/678,417 US4081292A (en) 1975-04-21 1976-04-19 Method of manufacturing a semi-insulating silicon layer
CA250,484A CA1059241A (en) 1975-04-21 1976-04-20 Method of manufacturing a semiconductor device employing silicon ion implantation into silicon compound layer
FR7611730A FR2309039A1 (fr) 1975-04-21 1976-04-21 Dispositif semi-conducteur et procede pour realiser dans celui-ci une couche semi-isolante en silicium
NL7604238A NL7604238A (nl) 1975-04-21 1976-04-21 Halfgeleiderinrichting.
DE19762617398 DE2617398A1 (de) 1975-04-21 1976-04-21 Halbleiterbauelement und verfahren zu seiner herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048379A JPS51123562A (en) 1975-04-21 1975-04-21 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS51123562A true JPS51123562A (en) 1976-10-28

Family

ID=12801674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50048379A Pending JPS51123562A (en) 1975-04-21 1975-04-21 Production method of semiconductor device

Country Status (7)

Country Link
US (1) US4081292A (enExample)
JP (1) JPS51123562A (enExample)
CA (1) CA1059241A (enExample)
DE (1) DE2617398A1 (enExample)
FR (1) FR2309039A1 (enExample)
GB (1) GB1532456A (enExample)
NL (1) NL7604238A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61271869A (ja) * 1985-05-27 1986-12-02 Oki Electric Ind Co Ltd 半導体装置の製造方法

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2627855A1 (de) * 1976-06-22 1977-12-29 Siemens Ag Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung
US4178191A (en) * 1978-08-10 1979-12-11 Rca Corp. Process of making a planar MOS silicon-on-insulating substrate device
US4197144A (en) * 1978-09-21 1980-04-08 General Electric Company Method for improving writing of information in memory targets
US4420765A (en) * 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
JPS58101439A (ja) * 1981-12-12 1983-06-16 Toshiba Corp 半導体装置の製造方法
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US4679308A (en) * 1984-12-14 1987-07-14 Honeywell Inc. Process for controlling mobile ion contamination in semiconductor devices
US4634473A (en) * 1985-09-09 1987-01-06 Rca Corporation Method for fabricating a radiation hardened oxide having structural damage
JPH0750693B2 (ja) * 1985-12-02 1995-05-31 日本テキサス・インスツルメンツ株式会社 酸化シリコン膜の製造方法
US4732867A (en) * 1986-11-03 1988-03-22 General Electric Company Method of forming alignment marks in sapphire
US5591661A (en) * 1992-04-07 1997-01-07 Shiota; Philip Method for fabricating devices for electrostatic discharge protection and voltage references, and the resulting structures
JPH0786515A (ja) * 1993-09-16 1995-03-31 Nec Corp ポリシリコン抵抗体の形成方法
US5882961A (en) * 1995-09-11 1999-03-16 Motorola, Inc. Method of manufacturing semiconductor device with reduced charge trapping
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
US5677562A (en) * 1996-05-14 1997-10-14 General Instrument Corporation Of Delaware Planar P-N junction semiconductor structure with multilayer passivation
SE509780C2 (sv) * 1997-07-04 1999-03-08 Ericsson Telefon Ab L M Bipolär effekttransistor och framställningsförfarande
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
CN105097570B (zh) * 2014-05-21 2017-12-19 北大方正集团有限公司 钝化层制造方法及高压半导体功率器件
KR102850766B1 (ko) 2020-10-08 2025-08-25 삼성전자주식회사 집적회로 장치 및 그 제조 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533857A (en) * 1967-11-29 1970-10-13 Hughes Aircraft Co Method of restoring crystals damaged by irradiation
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
CH549285A (de) * 1972-12-14 1974-05-15 Ibm Verfahren zum herstellen amorpher halbleiterschichten.
US3871067A (en) * 1973-06-29 1975-03-18 Ibm Method of manufacturing a semiconductor device
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
JPS532552B2 (enExample) * 1974-03-30 1978-01-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61271869A (ja) * 1985-05-27 1986-12-02 Oki Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US4081292A (en) 1978-03-28
GB1532456A (en) 1978-11-15
FR2309039A1 (fr) 1976-11-19
NL7604238A (nl) 1976-10-25
CA1059241A (en) 1979-07-24
DE2617398A1 (de) 1976-11-04
FR2309039B1 (enExample) 1980-05-09

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