JPS4957779A - - Google Patents

Info

Publication number
JPS4957779A
JPS4957779A JP48061739A JP6173973A JPS4957779A JP S4957779 A JPS4957779 A JP S4957779A JP 48061739 A JP48061739 A JP 48061739A JP 6173973 A JP6173973 A JP 6173973A JP S4957779 A JPS4957779 A JP S4957779A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48061739A
Other languages
Japanese (ja)
Other versions
JPS5648976B2 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4957779A publication Critical patent/JPS4957779A/ja
Publication of JPS5648976B2 publication Critical patent/JPS5648976B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/43—
    • H10W72/5363—
    • H10W72/5438—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Bipolar Integrated Circuits (AREA)
JP6173973A 1972-06-02 1973-06-01 Expired JPS5648976B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25933272A 1972-06-02 1972-06-02

Publications (2)

Publication Number Publication Date
JPS4957779A true JPS4957779A (enExample) 1974-06-05
JPS5648976B2 JPS5648976B2 (enExample) 1981-11-19

Family

ID=22984501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6173973A Expired JPS5648976B2 (enExample) 1972-06-02 1973-06-01

Country Status (4)

Country Link
JP (1) JPS5648976B2 (enExample)
DE (1) DE2328090C2 (enExample)
GB (1) GB1439351A (enExample)
NL (1) NL185432C (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPS59103373A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103371A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103372A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
JP4868683B2 (ja) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 可変容量キャパシタ
JP2017135376A (ja) * 2016-01-22 2017-08-03 Tdk株式会社 薄膜キャパシタ及び電子回路モジュール
JP2023141145A (ja) * 2022-03-23 2023-10-05 日産自動車株式会社 半導体装置、及びその製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151869A (ja) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
CN113555444A (zh) * 2021-07-06 2021-10-26 浙江芯国半导体有限公司 一种高质量氧化镓半导体器件及制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472282U (enExample) * 1971-01-23 1972-08-25

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE635797C (de) * 1930-07-26 1936-09-28 Hermsdorf Schomburg Isolatoren Hochspannungskondensator mit einem Dielektrikum aus keramischem Stoff oder Glas
DE897861C (de) * 1951-06-29 1953-11-26 Siemens Ag Elektrischer Durchfuehrungskondensator
DE1097563B (de) * 1958-04-26 1961-01-19 Elektroteile G M B H Zugmagnet fuer Gleich- oder Wechselstrom mit vom Anker angetriebener Zahnstange
US3149399A (en) * 1962-09-25 1964-09-22 Sprague Electric Co Silicon capacitor
GB1288278A (enExample) * 1968-12-31 1972-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472282U (enExample) * 1971-01-23 1972-08-25

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS59103373A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103371A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103372A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
JP4868683B2 (ja) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 可変容量キャパシタ
JP2017135376A (ja) * 2016-01-22 2017-08-03 Tdk株式会社 薄膜キャパシタ及び電子回路モジュール
JP2023141145A (ja) * 2022-03-23 2023-10-05 日産自動車株式会社 半導体装置、及びその製造方法

Also Published As

Publication number Publication date
NL185432B (nl) 1989-11-01
GB1439351A (en) 1976-06-16
NL7307686A (enExample) 1973-12-04
DE2328090A1 (de) 1973-12-13
NL185432C (nl) 1990-04-02
JPS5648976B2 (enExample) 1981-11-19
DE2328090C2 (de) 1987-01-22

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