JPS4957779A - - Google Patents

Info

Publication number
JPS4957779A
JPS4957779A JP48061739A JP6173973A JPS4957779A JP S4957779 A JPS4957779 A JP S4957779A JP 48061739 A JP48061739 A JP 48061739A JP 6173973 A JP6173973 A JP 6173973A JP S4957779 A JPS4957779 A JP S4957779A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP48061739A
Other versions
JPS5648976B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4957779A publication Critical patent/JPS4957779A/ja
Publication of JPS5648976B2 publication Critical patent/JPS5648976B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Integrated Circuits (AREA)
JP6173973A 1972-06-02 1973-06-01 Expired JPS5648976B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25933272A 1972-06-02 1972-06-02

Publications (2)

Publication Number Publication Date
JPS4957779A true JPS4957779A (ja) 1974-06-05
JPS5648976B2 JPS5648976B2 (ja) 1981-11-19

Family

ID=22984501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6173973A Expired JPS5648976B2 (ja) 1972-06-02 1973-06-01

Country Status (4)

Country Link
JP (1) JPS5648976B2 (ja)
DE (1) DE2328090A1 (ja)
GB (1) GB1439351A (ja)
NL (1) NL185432C (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPS59103371A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103372A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103373A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
JP4868683B2 (ja) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 可変容量キャパシタ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151869A (ja) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472282U (ja) * 1971-01-23 1972-08-25

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE635797C (de) * 1930-07-26 1936-09-28 Hermsdorf Schomburg Isolatoren Hochspannungskondensator mit einem Dielektrikum aus keramischem Stoff oder Glas
DE897861C (de) * 1951-06-29 1953-11-26 Siemens Ag Elektrischer Durchfuehrungskondensator
DE1097563B (de) * 1958-04-26 1961-01-19 Elektroteile G M B H Zugmagnet fuer Gleich- oder Wechselstrom mit vom Anker angetriebener Zahnstange
US3149399A (en) * 1962-09-25 1964-09-22 Sprague Electric Co Silicon capacitor
GB1288278A (ja) * 1968-12-31 1972-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS472282U (ja) * 1971-01-23 1972-08-25

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS617752B2 (ja) * 1975-06-14 1986-03-08 Fujitsu Ltd
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPH0330302B2 (ja) * 1981-06-29 1991-04-26
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPH0326547B2 (ja) * 1983-07-01 1991-04-11 Nippon Telegraph & Telephone
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6023505B2 (ja) * 1983-11-21 1985-06-07 株式会社日立製作所 半導体記憶装置
JPS6023506B2 (ja) * 1983-11-21 1985-06-07 株式会社日立製作所 半導体記憶装置
JPS6023507B2 (ja) * 1983-11-21 1985-06-07 株式会社日立製作所 半導体記憶装置
JPS59103373A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103372A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS59103371A (ja) * 1983-11-21 1984-06-14 Hitachi Ltd 半導体記憶装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
JP4868683B2 (ja) * 2000-05-09 2012-02-01 セントレ・ナショナル・デ・ラ・レシェルシェ・サイエンティフィーク 可変容量キャパシタ

Also Published As

Publication number Publication date
NL185432C (nl) 1990-04-02
NL7307686A (ja) 1973-12-04
GB1439351A (en) 1976-06-16
JPS5648976B2 (ja) 1981-11-19
DE2328090A1 (de) 1973-12-13
DE2328090C2 (ja) 1987-01-22
NL185432B (nl) 1989-11-01

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