JPH1184686A - レジスト剥離剤組成物 - Google Patents

レジスト剥離剤組成物

Info

Publication number
JPH1184686A
JPH1184686A JP9235926A JP23592697A JPH1184686A JP H1184686 A JPH1184686 A JP H1184686A JP 9235926 A JP9235926 A JP 9235926A JP 23592697 A JP23592697 A JP 23592697A JP H1184686 A JPH1184686 A JP H1184686A
Authority
JP
Japan
Prior art keywords
photoresist
ammonium hydroxide
water
alkylpyrrolidone
quaternary ammonium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9235926A
Other languages
English (en)
Japanese (ja)
Inventor
Takehito Maruyama
岳人 丸山
Hisaoki Abe
久起 阿部
Tetsuya Karita
哲也 刈田
Tetsuo Aoyama
哲男 青山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP9235926A priority Critical patent/JPH1184686A/ja
Priority to KR1019980034070A priority patent/KR100554685B1/ko
Priority to TW087114321A priority patent/TWI224816B/zh
Publication of JPH1184686A publication Critical patent/JPH1184686A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP9235926A 1997-09-01 1997-09-01 レジスト剥離剤組成物 Pending JPH1184686A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9235926A JPH1184686A (ja) 1997-09-01 1997-09-01 レジスト剥離剤組成物
KR1019980034070A KR100554685B1 (ko) 1997-09-01 1998-08-21 레지스트박리제 조성물
TW087114321A TWI224816B (en) 1997-09-01 1998-08-29 Photoresist removing composition and process for producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9235926A JPH1184686A (ja) 1997-09-01 1997-09-01 レジスト剥離剤組成物

Publications (1)

Publication Number Publication Date
JPH1184686A true JPH1184686A (ja) 1999-03-26

Family

ID=16993294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9235926A Pending JPH1184686A (ja) 1997-09-01 1997-09-01 レジスト剥離剤組成物

Country Status (3)

Country Link
JP (1) JPH1184686A (ko)
KR (1) KR100554685B1 (ko)
TW (1) TWI224816B (ko)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015480A (ja) * 1999-06-29 2001-01-19 Tokyo Electron Ltd 基板の処理方法
JP2001098191A (ja) * 1999-07-23 2001-04-10 Toray Fine Chemicals Co Ltd 有機塗膜剥離用組成物
JP2002162755A (ja) * 2000-11-29 2002-06-07 Mitsubishi Gas Chem Co Inc 半導体素子の製造方法
SG114566A1 (en) * 2001-09-28 2005-09-28 Mitsubishi Gas Chemical Co Liquid composition for removing a photoresist
KR100700998B1 (ko) * 2004-06-15 2007-03-30 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 기판으로부터 잔사를 제거하기 위한 조성물 및 그의 사용방법
WO2008026408A1 (fr) * 2006-08-31 2008-03-06 Tokyo Ohka Kogyo Co., Ltd. Solution d'enlèvement de la résine photosensible et procédé de traitement d'un substrat à l'aide de celle-ci
JP2009063649A (ja) * 2007-09-04 2009-03-26 Nec Lcd Technologies Ltd 薬液及びそれを用いた基板処理方法
JP2010111795A (ja) * 2008-11-07 2010-05-20 Chisso Corp 剥離液
US7879784B2 (en) 2003-08-05 2011-02-01 Kao Corporation Stripping agent composition for a resist
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
JP2013183080A (ja) * 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
US8697345B2 (en) 2001-12-27 2014-04-15 Tokyo Ohka Kogyo Co., Ltd. Photoresist stripping solution and a method of stripping photoresists using the same
JP2015511935A (ja) * 2012-01-17 2015-04-23 タミンコ 改良されたｎ−アルキルピロリドン溶媒の使用
JP2016500159A (ja) * 2012-11-21 2016-01-07 ダイナロイ，リミティド ライアビリティ カンパニー 基板から物質を除去するための方法および組成物

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104950601B (zh) * 2015-06-24 2019-05-14 苏州晶瑞化学股份有限公司 一种掩膜版用清洗剂、其应用以及掩膜版的清洗方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5563119A (en) * 1995-01-26 1996-10-08 Ashland Inc. Stripping compositions containing alkanolamine compounds

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015480A (ja) * 1999-06-29 2001-01-19 Tokyo Electron Ltd 基板の処理方法
JP2001098191A (ja) * 1999-07-23 2001-04-10 Toray Fine Chemicals Co Ltd 有機塗膜剥離用組成物
JP2002162755A (ja) * 2000-11-29 2002-06-07 Mitsubishi Gas Chem Co Inc 半導体素子の製造方法
SG114566A1 (en) * 2001-09-28 2005-09-28 Mitsubishi Gas Chemical Co Liquid composition for removing a photoresist
US8697345B2 (en) 2001-12-27 2014-04-15 Tokyo Ohka Kogyo Co., Ltd. Photoresist stripping solution and a method of stripping photoresists using the same
US7879784B2 (en) 2003-08-05 2011-02-01 Kao Corporation Stripping agent composition for a resist
KR100700998B1 (ko) * 2004-06-15 2007-03-30 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 기판으로부터 잔사를 제거하기 위한 조성물 및 그의 사용방법
WO2008026408A1 (fr) * 2006-08-31 2008-03-06 Tokyo Ohka Kogyo Co., Ltd. Solution d'enlèvement de la résine photosensible et procédé de traitement d'un substrat à l'aide de celle-ci
JP2009063649A (ja) * 2007-09-04 2009-03-26 Nec Lcd Technologies Ltd 薬液及びそれを用いた基板処理方法
JP2010111795A (ja) * 2008-11-07 2010-05-20 Chisso Corp 剥離液
JP2013500503A (ja) * 2009-07-30 2013-01-07 ビーエーエスエフ ソシエタス・ヨーロピア 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物
US9484218B2 (en) 2009-07-30 2016-11-01 Basf Se Post ion implant stripper for advanced semiconductor application
JP2015511935A (ja) * 2012-01-17 2015-04-23 タミンコ 改良されたｎ−アルキルピロリドン溶媒の使用
JP2017095520A (ja) * 2012-01-17 2017-06-01 タミンコ 改良されたｎ−アルキルピロリドン溶媒の使用
JP2013183080A (ja) * 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
JP2016500159A (ja) * 2012-11-21 2016-01-07 ダイナロイ，リミティド ライアビリティ カンパニー 基板から物質を除去するための方法および組成物

Also Published As

Publication number Publication date
KR100554685B1 (ko) 2006-06-13
TWI224816B (en) 2004-12-01
KR19990029334A (ko) 1999-04-26

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