JPH1174202A - 窒化ガリウム系ｉｉｉ−ｖ族化合物半導体の気相成長装置並びに窒化ガリウム系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法 - Google Patents

窒化ガリウム系ｉｉｉ−ｖ族化合物半導体の気相成長装置並びに窒化ガリウム系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法

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Publication number
JPH1174202A
JPH1174202A JP23362097A JP23362097A JPH1174202A JP H1174202 A JPH1174202 A JP H1174202A JP 23362097 A JP23362097 A JP 23362097A JP 23362097 A JP23362097 A JP 23362097A JP H1174202 A JPH1174202 A JP H1174202A
Authority
JP
Japan
Prior art keywords
heating
gallium nitride
compound semiconductor
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23362097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174202A5 (enExample
Inventor
Daisuke Hanaoka
大介 花岡
Masaki Furukawa
勝紀 古川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP23362097A priority Critical patent/JPH1174202A/ja
Publication of JPH1174202A publication Critical patent/JPH1174202A/ja
Publication of JPH1174202A5 publication Critical patent/JPH1174202A5/ja
Pending legal-status Critical Current

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  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP23362097A 1997-08-29 1997-08-29 窒化ガリウム系ｉｉｉ−ｖ族化合物半導体の気相成長装置並びに窒化ガリウム系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法 Pending JPH1174202A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23362097A JPH1174202A (ja) 1997-08-29 1997-08-29 窒化ガリウム系ｉｉｉ−ｖ族化合物半導体の気相成長装置並びに窒化ガリウム系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23362097A JPH1174202A (ja) 1997-08-29 1997-08-29 窒化ガリウム系ｉｉｉ−ｖ族化合物半導体の気相成長装置並びに窒化ガリウム系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPH1174202A true JPH1174202A (ja) 1999-03-16
JPH1174202A5 JPH1174202A5 (enExample) 2005-08-11

Family

ID=16957909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23362097A Pending JPH1174202A (ja) 1997-08-29 1997-08-29 窒化ガリウム系ｉｉｉ−ｖ族化合物半導体の気相成長装置並びに窒化ガリウム系ｉｉｉ−ｖ族化合物半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPH1174202A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001073160A1 (fr) * 2000-03-27 2001-10-04 Tohoku Techno Arch Co., Ltd. Procede de preparation d'un materiau semi-conducteur d'oxyde de zinc
US6589362B2 (en) 2001-07-19 2003-07-08 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor member formed on silicon substrate
JP2003531489A (ja) * 2000-04-17 2003-10-21 エスアール ジェイムス ジェイ メズィー ウェハーを熱処理する方法および装置
JP2006173540A (ja) * 2004-12-20 2006-06-29 Taiyo Nippon Sanso Corp 気相成長装置
KR101144838B1 (ko) * 2007-08-29 2012-05-11 삼성코닝정밀소재 주식회사 질화갈륨 기판 성장 반응로
KR101248476B1 (ko) * 2012-03-15 2013-04-02 주식회사루미지엔테크 박막 형성 장치
KR20140021715A (ko) * 2011-07-05 2014-02-20 파나소닉 주식회사 질화물 반도체 발광 소자의 제조 방법, 웨이퍼, 질화물 반도체 발광 소자
KR101525210B1 (ko) * 2013-12-20 2015-06-05 주식회사 유진테크 기판 처리장치

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001073160A1 (fr) * 2000-03-27 2001-10-04 Tohoku Techno Arch Co., Ltd. Procede de preparation d'un materiau semi-conducteur d'oxyde de zinc
US6860937B1 (en) 2000-03-27 2005-03-01 Tohoku Techno Arch Co., Ltd. Method for preparing zinc oxide semi-conductor material
JP2003531489A (ja) * 2000-04-17 2003-10-21 エスアール ジェイムス ジェイ メズィー ウェハーを熱処理する方法および装置
US6589362B2 (en) 2001-07-19 2003-07-08 Tohoku Techno Arch Co., Ltd. Zinc oxide semiconductor member formed on silicon substrate
JP2006173540A (ja) * 2004-12-20 2006-06-29 Taiyo Nippon Sanso Corp 気相成長装置
KR101144838B1 (ko) * 2007-08-29 2012-05-11 삼성코닝정밀소재 주식회사 질화갈륨 기판 성장 반응로
KR20140021715A (ko) * 2011-07-05 2014-02-20 파나소닉 주식회사 질화물 반도체 발광 소자의 제조 방법, 웨이퍼, 질화물 반도체 발광 소자
KR101248476B1 (ko) * 2012-03-15 2013-04-02 주식회사루미지엔테크 박막 형성 장치
KR101525210B1 (ko) * 2013-12-20 2015-06-05 주식회사 유진테크 기판 처리장치

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