JPH11346031A - ダイオ―ドレ―ザ―素子及びその製造方法 - Google Patents

ダイオ―ドレ―ザ―素子及びその製造方法

Info

Publication number
JPH11346031A
JPH11346031A JP11134768A JP13476899A JPH11346031A JP H11346031 A JPH11346031 A JP H11346031A JP 11134768 A JP11134768 A JP 11134768A JP 13476899 A JP13476899 A JP 13476899A JP H11346031 A JPH11346031 A JP H11346031A
Authority
JP
Japan
Prior art keywords
carrier
substrate
laser
diode laser
laser body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11134768A
Other languages
English (en)
Japanese (ja)
Inventor
Lorenzen Dierk
ロレンツェン ディルク
Franz Daiminger
ダイミンガー フランツ
Friedhelm Dorsch
ドルシュ フリートヘルム
Dusch Kacha
ジュース カーチャ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jenoptik AG
Original Assignee
Jenoptik Jena GmbH
Jenoptik AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Jena GmbH, Jenoptik AG filed Critical Jenoptik Jena GmbH
Publication of JPH11346031A publication Critical patent/JPH11346031A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
JP11134768A 1998-05-14 1999-05-14 ダイオ―ドレ―ザ―素子及びその製造方法 Pending JPH11346031A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19821544A DE19821544A1 (de) 1998-05-14 1998-05-14 Diodenlaserbauelement und Verfahren zu dessen Herstellung
DE19821544:4 1998-05-14

Publications (1)

Publication Number Publication Date
JPH11346031A true JPH11346031A (ja) 1999-12-14

Family

ID=7867705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11134768A Pending JPH11346031A (ja) 1998-05-14 1999-05-14 ダイオ―ドレ―ザ―素子及びその製造方法

Country Status (2)

Country Link
JP (1) JPH11346031A (de)
DE (1) DE19821544A1 (de)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124729A (ja) * 2000-08-18 2002-04-26 Osram Opt Semiconductors Gmbh & Co Offene Handels G 半導体レーザ素子の製造方法
JP2007165624A (ja) * 2005-12-14 2007-06-28 Sony Corp 照射装置
CN1326298C (zh) * 2005-06-29 2007-07-11 武汉电信器件有限公司 一种提高半导体激光器成品率的方法
US7271419B2 (en) 2003-08-29 2007-09-18 Osram Opto Semiconductor Gmbh Laser device having a plurality of emission zones
WO2009113180A1 (ja) 2008-03-14 2009-09-17 三菱電機株式会社 光モジュール
WO2013118800A1 (ja) * 2012-02-08 2013-08-15 ウシオ電機株式会社 半導体装置
WO2013146646A1 (ja) * 2012-03-30 2013-10-03 ウシオ電機株式会社 半導体レーザ装置
CN103427330A (zh) * 2013-07-17 2013-12-04 丹阳聚辰光电科技有限公司 降低应力的激光器芯片结构和热沉结构及其制备方法
JP2014517542A (ja) * 2011-06-16 2014-07-17 オスラム ゲーエムベーハー 照明デバイスの製造方法および照明デバイス
US20160218482A1 (en) * 2015-01-27 2016-07-28 Parviz Tayebati Solder-creep management in high-power laser devices
CN108831986A (zh) * 2018-05-07 2018-11-16 深圳技术大学（筹） 热沉装置及其制备方法
CN112103766A (zh) * 2020-08-13 2020-12-18 长春理工大学 一种用于半导体激光器封装的过渡热沉结构及其使用方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6208677B1 (en) * 1999-08-31 2001-03-27 Trw Inc. Diode array package with homogeneous output
DE10011892A1 (de) * 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
DE10015964C2 (de) * 2000-03-30 2002-06-13 Infineon Technologies Ag Lotband für flexible und temperaturfeste Lotverbindungen
DE10061265A1 (de) * 2000-12-06 2002-06-27 Jenoptik Jena Gmbh Diodenlaseranordnung
DE10113943B4 (de) 2001-03-21 2009-01-22 Jenoptik Laserdiode Gmbh Diodenlaserbauelement
DE10243757A1 (de) * 2002-01-31 2004-04-01 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
DE10234704A1 (de) 2002-07-30 2004-02-19 Osram Opto Semiconductors Gmbh Halbleitervorrichtung mit Kühlelement
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
CN100530705C (zh) 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
DE10361899B4 (de) 2003-12-22 2008-10-30 Jenoptik Laserdiode Gmbh Ausdehnungsangepasstes wärmespreizendes Mehrlagensubstrat
DE102004015446B4 (de) * 2003-12-30 2010-08-05 Osram Opto Semiconductors Gmbh Wärmesenke für ein diskretes Halbleiterbauelement und Verfahren zu dessen Herstellung sowie elektronische Komponente
DE102004057454B4 (de) * 2004-11-25 2009-10-22 Jenoptik Laserdiode Gmbh Diodenlasermodul und Verfahren zu dessen Herstellung
DE102005019115B4 (de) * 2005-01-24 2010-04-08 Osram Opto Semiconductors Gmbh Halbleiterlaserbauelement
DE102007009380A1 (de) * 2007-02-21 2008-09-04 Forschungsverbund Berlin E.V. Impulslaser und Verfahren zur Erzeugung von Laserstrahlung
DE102008044641A1 (de) * 2008-04-28 2009-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102016103358A1 (de) * 2016-02-25 2017-08-31 Osram Opto Semiconductors Gmbh Laserbarren mit gräben
DE102017121015A1 (de) * 2017-09-12 2019-03-14 Rogers Germany Gmbh Adapterelement zum Anbinden eines Bauelements wie einer Laserdiode an einen Kühlkörper, ein System aus einer Laserdiode, einem Kühlkörper und einem Adapterelement und Verfahren zur Herstellung eines Adapterelements
DE102019113714A1 (de) * 2019-05-23 2020-11-26 Rogers Germany Gmbh Adapterelement zum Anbinden eines Elektronikbauteils an ein Kühlkörperelement, System mit einem solchen Adapterelement und Verfahren zum Herstellen eines solchen Adapterelements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697205A (en) * 1986-03-13 1987-09-29 Thermacore, Inc. Heat pipe
JP2863678B2 (ja) * 1992-09-28 1999-03-03 三菱電機株式会社 半導体レーザ装置及びその製造方法
DE19506093C2 (de) * 1995-02-22 2000-12-07 Dilas Diodenlaser Gmbh Diodenlaserbauelement
DE19605302A1 (de) * 1996-02-14 1997-08-21 Fraunhofer Ges Forschung Kühlkörper mit einer Montagefläche für ein elektronisches Bauteil

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124729A (ja) * 2000-08-18 2002-04-26 Osram Opt Semiconductors Gmbh & Co Offene Handels G 半導体レーザ素子の製造方法
US7271419B2 (en) 2003-08-29 2007-09-18 Osram Opto Semiconductor Gmbh Laser device having a plurality of emission zones
CN1326298C (zh) * 2005-06-29 2007-07-11 武汉电信器件有限公司 一种提高半导体激光器成品率的方法
JP2007165624A (ja) * 2005-12-14 2007-06-28 Sony Corp 照射装置
WO2009113180A1 (ja) 2008-03-14 2009-09-17 三菱電機株式会社 光モジュール
KR101156815B1 (ko) * 2008-03-14 2012-06-18 미쓰비시덴키 가부시키가이샤 광 모듈
JP5253495B2 (ja) * 2008-03-14 2013-07-31 三菱電機株式会社 光モジュール
JP2014517542A (ja) * 2011-06-16 2014-07-17 オスラム ゲーエムベーハー 照明デバイスの製造方法および照明デバイス
US9488344B2 (en) 2011-06-16 2016-11-08 Osram Gmbh Method for producing a lighting device and lighting device
WO2013118800A1 (ja) * 2012-02-08 2013-08-15 ウシオ電機株式会社 半導体装置
WO2013146646A1 (ja) * 2012-03-30 2013-10-03 ウシオ電機株式会社 半導体レーザ装置
WO2015007029A1 (zh) * 2013-07-17 2015-01-22 丹阳聚辰光电科技有限公司 降低应力的激光器芯片结构和热沉结构及其制备方法
CN103427330A (zh) * 2013-07-17 2013-12-04 丹阳聚辰光电科技有限公司 降低应力的激光器芯片结构和热沉结构及其制备方法
US20160218482A1 (en) * 2015-01-27 2016-07-28 Parviz Tayebati Solder-creep management in high-power laser devices
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US20180375297A1 (en) * 2015-01-27 2018-12-27 Parviz Tayebati Solder-creep management in high-power laser devices
US11196234B2 (en) * 2015-01-27 2021-12-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
CN108831986A (zh) * 2018-05-07 2018-11-16 深圳技术大学（筹） 热沉装置及其制备方法
CN112103766A (zh) * 2020-08-13 2020-12-18 长春理工大学 一种用于半导体激光器封装的过渡热沉结构及其使用方法

Also Published As

Publication number Publication date
DE19821544A1 (de) 1999-12-16

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