JPH11346031A - Diode laser element and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a diode laser element, which is constituted of a carrying body and a base body having the largest heat conduction power and is provided with a bar-shaped laser body and a heat sink coupled with the laser body so that a stress and a curve are not generated in the heat sink, and a method of manufacturing the element. SOLUTION: A base body 1 is constituted as a fine stripe part body formed by arranging individual fine stripe parts 1b in the widthwise direction of a laser body, whereby the fine body 1 is formed so that a thermal expansion part to adapt to the thermal expansion of the laser body is generated at 25% or lower at the region of a laser body 3 mounting surface of the upper surface of a fine stripe part 1b column being surface-coupled with a carrying body 2.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laser having a bar-shaped laser body and a heat sink, the heat sink including a carrier, and the carrier being mounted so as to be surface-coupled to a dielectric substrate having a high thermal conductivity. Made of a material having a coefficient of thermal expansion substantially greater than that of the body, provided on the top surface of the substrate with metallized portions for current induction and electrical contacts,
The present invention relates to a diode laser device having a laser body mounted on the metallized portion by using a brazing material, and a method for manufacturing the same.

[0002]

2. Description of the Related Art High power diode lasers are
This is a bar-shaped semiconductor laser body (hereinafter simply referred to as a laser body) consisting of a row of n laser diodes of emitters of width b which are juxtaposed with each other. The length r of the optical resonance is usually much shorter than the overall width B = na of the laser body. Typical values for high power diode lasers are
n = 7. . . 100, b = 10. . . 500 μm, a = 2
0. . . 2000 μm, r = 0.3. . . 2 mm, B =
2. . . The range is 15 mm. The ratio of the emitter width to the emitter offset, f = b / a, varies between 20% (continuous wave operation) and 90% (pulse operation). Recently, the optical power of high power diode lasers has reached 5W to 280W. High power diode lasers are mainly made of semiconductor material, gallium arsenide (GaAs) with a thickness of 80 μm to 150 μm.

[0003] Due to various loss mechanisms, only 20% to 60% of the power supplied to the diode laser is converted to optical output. The rest is free in the form of thermal energy, causing the components to heat up. The heat output density generated can exceed 3 kW / cm ² . In this case, the entire laser body produces a loss power on the order of 50W to 200W. To ensure good heat dissipation, the laser body is mounted on a heat sink made of a material with high thermal conductivity (100 W / (mK) or more). That is, the laser body is mounted such that the heat generating side (the epitaxy side which is an electrically positive contact in most cases) faces downward. The laser body and the heat sink form a diode laser element.

It should be noted that the mounting surface on the heat sink is as flat as possible. This is because all laser diode emitters must be located on a line deviated by no more than 2 μm from a straight line in order to efficiently shape the diode laser beam as a light beam (the so-called “smile smil”).
e ").

In order to obtain a life of 10,000 hours or more, the temperature of the laser body must not exceed 70 ° C. Therefore, for operation at room temperature, 0.2 to 0.6 kW is required for the thermal resistance of the heat sink of the diode laser device. The following table lists a series of materials considered to construct such a heat sink. In addition to the thermal conductivity, the table lists the coefficients of thermal expansion such as linear expansion coefficients and elastic modules that play an important role in bonding some of these materials together by welding or brazing processes. Have been.

[Table 1] As can be seen, materials that are particularly suitable for heat sinks due to their high thermal conductivity have significantly different coefficients of thermal expansion than GaAs, which is typical for laser bodies.

[0006] In particular, in order to satisfy the above requirement for a flat mounting surface, the connection between the laser body and the heat sink must be performed with as little bending stress as possible. This is achieved in principle by compensating for differences in thermal expansion between the heat sink and the laser body (eg, using soft wax) and / or adapting the expansion of the heat sink to that of the laser body. You.

[0007] It is known to braze a laser body (eg lead / tin) on a heat sink made of massive copper using soft wax. The heat sink is cooled on its lower surface by a Peltier element. Alternatively, it is known to braze the laser body onto a microchannel heat sink using soft wax. The microchannel heat sink is made of copper or silicon, through which the cooling medium flows. In both cases, the soft wax has a different expansion coefficient α (copper: α
= 16.5 ppm / K, GaAs: α = 6.5 ppm / K) It is used to break down the mechanical stress generated in the joining partner during cooling after brazing by plastic flow. Such stress reduction is necessary because large mechanical stresses on the laser body adversely affect the life of the diode laser. That is, it causes slip in the GaAs material, blackout of individual laser diodes, or damage of the laser body.

However, life tests have shown that soft wax is not stable in the long term at high power. The effect of high current density and mechanical residual stress promotes electromigration and whisker formation in the braze layer. For this reason, gradation occurs in the diode laser or the diode laser breaks down. Such an effect can be reduced by reducing the residual stress in the bonding area. In other words, the coefficient of expansion of the heat sink is sufficient (approximately 2) for the material of the laser body.
(ppm / K or less)

[0009] However, the last mentioned solution uses hard wax instead of soft wax (eg gold / tin), but small amounts of hard wax tend to cause electromigration. Since hard wax has low flowability, the laser body is brazed on a heat sink, and the expansion coefficient of the heat sink is made to correspond to the expansion coefficient of the laser body by 0.5 ppm / K or more, so that the mechanical stress in the brazing process is increased. It is absolutely necessary to avoid the occurrence of Such a heat sink is, for example, a composite material of copper and tungsten (CuW). Tungsten has a much lower thermal conductivity than copper.

[0010] DE 196 44 941 discloses a solution in which the adaptation of the expansion coefficient of the heat sink is completely omitted. Tensile stresses which occur on cooling after hard brazing and which act on the laser body are expedient because they cause the laser body to break at predetermined predetermined breaking points between the emitters. The laser body is therefore divided into k individual laser diodes or groups of laser diodes (stress-guided individualization). In this way, only one large expansion coefficient ΔL of the entire laser body with respect to the substrate is reduced by k smaller expansion coefficients ΔL / k of these laser diodes with respect to the coupling surface assigned to the laser diodes.
To decrease. These k expansion coefficients ΔL / k only produce a negligible voltage.

For the various material connections between the laser body and the heat sink, it is doubtful whether the tensile stresses generated during the assembly process and acting on the individualization control have an influence on the life of the diode laser element.

[0012] In this connection it is therefore advantageous to combine materials having different thermal and thermo-mechanical properties in one heat sink and to adapt the expansion of this heat sink to that of the laser body. The heat sink can consist, for example, of a rigid carrier and a substrate brazed onto the carrier. A substrate is a layer of material whose thickness is small compared to its length and width.
Such a substrate is a continuous layer in the prior art (closed substrate).

[0013] For example, in the prior art, a laser body is brazed with a hard wax onto a CuW substrate and then the substrate is brazed with a soft wax onto a copper carrier to provide CuW as a substrate.
It has been known to utilize the expansion compatibility of copper and the high thermal conductivity of copper as a carrier in the structure of a heat sink.

In DE 196 05 302, the heat sink is formed from three substrates. By bonding these three substrates in a material-bound manner, the goal of heat sink expansion compatibility is achieved. In this case, one substrate (Al) having a lower expansion coefficient than GaAs
N ceramics or tungsten sheet)
A metal having a higher coefficient of expansion than As (for example, copper) is coated on both sides, and its thickness is determined by the effect of the heat sink on the mounting surface of the laser body so as to correspond to the coefficient of thermal expansion of the laser body material. Is selected so as to obtain a suitable thermal expansion coefficient.

A disadvantage of this solution is that, like the solutions already described, no material is used which has a higher thermal conductivity than copper. Such a material must be located as close as possible to the heat-generating region of the diode laser element in terms of the shape of the substrate, in order to effectively spread the high heat output density. Therefore, at this point, it is necessary to define the substrate with the highest thermal conductivity. This substrate of maximum thermal conductivity is characterized in that the thermal conductivity of the material is higher than that of any metal, 420 to 430 W / (mK) or more (greater than the value for silver at room temperature). I have. There are few such substrates, for example, single crystal silicon carbide (SC-SiC), translucent cubic boron nitride (t-cBN), and thermally or highly directional cyanuric graphite (TPG, HOPG). ) And diamond (CVD-diamond) chemically precipitated from the vapor phase. All of these have drawbacks, ie, their coefficient of thermal expansion is at least 2p compared to GaAs.
Lack of compatibility by pm / K, hard brazing of the laser body onto such a substrate produces a detrimental tensile stress on the diode laser.

The metal material has not only a lower heat conductivity than the above-mentioned non-metal material having a high heat conductivity, but there is another reason that the metal material cannot be used for the base. It arises from the requirement of some applications to operate the laser diodes within the laser individually and independently of each other (individually addressable). In the prior art, this is only achieved by mounting the laser body on a metallized dielectric substrate (dielectric) suitably constituted by conductors. Here, the dielectric is a material having a specific electric resistance of 1 mOhm or more.

In response to the above description, four important physical technical requirements for the concept of a diode laser device will be described. (A) In order to reduce the thermal resistance of the heat sink as much as possible, it is necessary to use a substrate having the maximum thermal conductivity. (B) Individual addressability requires mounting on a dielectric substrate that is locally defined and metallized. (C) To extend the life of the diode laser element, use hard wax without electromigration.
It must be mounted on a heat sink that is inflated to the laser body. (D) In order to reduce the "smile" of the laser body, it is necessary that the mounting surface of the heat sink is extremely flat. For this purpose, it is necessary to connect the base and the carrier to each other in advance without bending and without stress.

According to the prior art, a series of attempts exist,
Although these requirements are partially satisfied, the above (c) regarding expansion compatibility is central. WO / 942470
No. 3 proposes structuring the surface of a CVD diamond substrate and filling the resulting grooves or holes with a metal whose coefficient of expansion is significantly higher than that of the substrate. However, in terms of thermal processing, the above (a) and (b) are not sufficiently satisfied because the metal component is too high near the chip, and this method is not thermally advantageous for high power diode laser bodies. Absent.

US Pat. No. 5,455,738 discloses 1
A composite consisting of diamond particles of at least 00 μm is described. The diamond particles are loaded into a metal matrix consisting of aluminum or copper at a rate such that a desired effective coefficient of expansion occurs. Such composites do not allow mechanical post-processing because of their mechanically very different components, and their mounting surfaces cannot be polished to the flatness required for bar-shaped diode laser bodies (see above). d). In addition, the improvement in the effective thermal conductivity of this composite over pure copper is less than 50% due to too high a metal component. This solution does not include the concept of making it addressable.

Other patents originate from the expansion compatibility of the layer structure. U.S. Pat. No. 5,299,214 proposes placing a diamond substrate on a carrier having a higher expansion coefficient and varying the material thickness to produce the desired expansion coefficient. This solution risks bending and breaking over relatively large surfaces due to mechanical asymmetry.

A solution of this kind which emphasizes symmetry in order to avoid bending stresses is described in DE-A 1 950 609.
See No. 3 publication. This publication describes a reverse version of DE 196 05 302, in which a copper layer is joined at its center to two layers with lower thermal expansion at the upper and lower surfaces. Furthermore, a structure used for guiding the cooling medium can be inserted into the center of the copper layer. The advantage of this arrangement is that the diode laser body is mounted directly on the metallized CVD diamond and therefore has the best thermal expansion compared to the other solutions described above. Also, the invention described in this publication is the only invention which utilizes the potential of a dielectric CVD diamond substrate with respect to the electrical addressing of individual emitters, while at the same time having excellent thermal expansion, compared to the other solutions mentioned above. It is.

The disadvantage, however, is that the number of coupling planes provided by the symmetrical structure is at least three, so that there are at least two coupling planes. In addition, there is no technical problem of bonding to the CVD diamond substrate inside the cooling element. Here, the technical deficiencies are filled in by taking into account a heat sink consisting only of the base and the carrier.

For the expansion compatibility of a heat sink containing a substrate having the highest thermal conductivity, the substrate is mechanically stabilized on a carrier having a coefficient of thermal expansion significantly higher than that of the laser body material. It is necessary to bind to The thickness ratio between the substrate and the carrier required for expansion compatibility is determined by the difference in the elastic properties of the two materials. As is evident from what has already been mentioned, elastic modules of the substrate with maximum thermal conductivity are generally 3 to 10 factors higher than elastic modules of the expansion-compatible carrier. The effect on the expansion suitability of a carrier of constant thickness is greater as the elastic module of the carrier increases. Conversely, the effect on expansion compatibility when the elastic module is constant is:
It increases as the thickness of the carrier increases. In addition, when the thickness of the carrier is constant, but is too thin, the influence of the carrier on the expansion compatibility increases if the linear expansion coefficient of the carrier increases.

The problem of expansion compatibility due to the bonding between the substrate and the carrier, which are the joining partners, is very different from the viewpoint of thermo-mechanical processing, and the two elements having a large area are flat, thermally thin and stable. The purpose is to provide a joint zone. Such problems have never been publicized.

It has been pointed out that in the case of a stable bond over a large area, the joining zone is used for resolving mechanical stress between the joining partners by plastic flow. Thus, the larger the bonding area, the thicker the bonding zone must be. However, a bonding zone having a thickness of several tens of μm adversely affects the thermal resistance. Also, plastic flow in the joining zone weakens the expansion adaptation of the carrier and is a process which is technically difficult to detect in terms of long-term stability.

In DE 196 44 941, when a large-area laser body is brazed onto a substrate subjected to a tensile stress, the laser body is divided into smaller, independent individual surfaces upon mounting. These individual surfaces cannot absorb large tensile stresses. Also, such an attachment process is only possible for materials (semiconductors and salts) that have a larger coefficient of expansion than the substrate and have little plasticity. Such a bonding process is not a problem for the carrier-substrate bond due to the metallic properties of the carrier material. Also, the material of the carrier does not allow the substrate to break down into smaller, stress-free partial substrates due to compressive stresses during mounting.

[0027]

An object of the present invention is to provide a diode comprising a carrier and a substrate having a maximum thermal conductivity and having a heat sink coupled to a bar-shaped laser body without causing stress and bending. An object of the present invention is to provide a laser element and a manufacturing method thereof.

Another object is to make the tensile stress acting on the laser body as small as possible during the manufacture of the diode laser device according to the invention.

[0029]

SUMMARY OF THE INVENTION According to the present invention, there is provided, in accordance with the present invention, a method for disassembling a substrate into a series of k partial substrates prior to mounting the substrate on a carrier to facilitate placement. When these k sub-substrates are still connected to each other in the region (1), the problem is solved by connecting the k sub-substrates to the carrier independently of each other as individual sub-substrates.

With the above configuration, both the problem of mechanical stress and the problem of curvature occurring on a surface having a large width B can be solved by k smaller surfaces having a width smaller than B / k. The difference between the stress-induced individualization (DE 19644941) and the present invention lies in the differences in the mounting stresses generated and their effects. Mounting with tensile stress (zugverspannende Montag
In case e), the premise of individualization is hard brazing. On the other hand, according to the present invention, mounting by applying a compressive stress (druckvers
In the case of pannende Montage), individualization is a prerequisite for hard brazing.

The individualization of the substrate into individual sub-substrates in the form of individual strips significantly improves the construction of the heat sink mechanically, and the solution according to the invention has other advantages as described below. is there.

Not only can the shape of the individualized substrate strip vary with respect to its height (the thickness of the substrate), but also with respect to its individual width and spacing, and therefore the expansion The ratio of the thickness of the substrate to the carrier can be varied to obtain compatibility, and further freedom is obtained. That is, the ratio between the interval between the strips and the width of the strips can be changed. This is advantageous when the thickness of the substrate or carrier is specified in advance.

Unlike mounting on a closed substrate (where the conductive path structure must be provided on the substrate in the form of patterned metallization to be individually addressable), the substrate is individually In the case of disassembly into strips, the distance between the strips is advantageously selected to a size corresponding to the distance between the emitters of the two laser diodes. Thus, current can be separately supplied to the plurality of laser diodes, and the process of wet-chemical patterning the metallization can be omitted.

Further, the possibility of unwanted interactions,
For example, thermal crosstalk between individual emitters is reduced. The number of emitters and the space factor of a bar-shaped laser body are sometimes very variable. If, however, it is necessary to maintain the number of strips of the substrate, three different configurations are possible, which are advantageous for different laser body structures. That is, (a) the configuration described above, in which one laser diode is arranged on one strip. (B) A configuration in which, when the number of emitters is large, a plurality of laser diodes are arranged on one strip.
(C) an arrangement in which, when the number of emitters is small, one laser diode extends over a plurality of strips with respect to its position, advantageously arranging the laser diode such that there is no emitter above the gap.

[0035]

Next, three embodiments of the present invention will be described in detail with reference to the drawings.

First Embodiment The substrate 1 is made of translucent cubic boron nitride (t-cBN), the size of which is equal to the width of the bar-shaped laser body.
The thickness is 0.2 mm to 0.8 mm, and the length corresponds to 1 to 3 times the resonance length of the laser diode. A thin-film metallized portion 4a is provided on the entire upper and lower surfaces of the substrate 1. Next, with a laser, 10 to 50 μm
A plurality of parallel channels 1a of width are drilled across the substrate 1. This results in a strip structure. In the present embodiment (a and b in FIG. 1), the number of the formed strips 1b matches the number of the emitters 3a of the bar-shaped laser body 3 to be attached. Next, the thin film metallized portion 4a on the strip 1b is reinforced with copper by galvanic current. The degree of reinforcement is such that a metal film having a thickness necessary for guiding the current is formed on the upper surface (thick film metallized portion 4b on the upper surface of the substrate) and deposited metal is formed on the lower surface (thick metallized portion 4c on the lower surface of the substrate). To close the strip gap again. The required thickness of the conductor is such that the current density is the electromigration threshold (100,000) in the direction of flow.
(A / cm ² ) (100
For example, for a 1 cm wide laser body 3 operating with amperage DC current, it is approximately 20 μm). Nickel or gold is deposited on the thick film metallization to allow for good brazing. Thereafter, the entire strip structure can be cut off from the surrounding base 1. In this case, the individual strip structures are connected to one another via the pressure-membrane metallized parts 4a and 4b, so that the individual strips do not separate from one another. Next, the strip structure obtained in this manner was coated with gold using eutectic AuGe brazing material 5 to form 1.5.
It is combined with a copper carrier 2, which has a thickness of mm, so that an expansion coefficient of approximately 6.5 ppm / K is obtained on the mounting surface. At this point, the eutectic gold / tin brazing material 6 used for brazing the laser body can be sputtered on the mounting surface.

Second Embodiment The upper surface of the CVD diamond substrate 1 having a thickness of 0.1 to 0.5 mm and a length corresponding to 2 to 5 times the resonance length of the laser diode of the laser body 3 is patterned. hand,
A metallized portion 4a of gold is formed. The number of conductive paths corresponds to the number of emitters 3a of the laser body. Next, the substrate 1 is cut using a laser so that continuous channels 1a having a width of 10 to 100 μm are formed between the two conductive paths. In this case, the cutting is performed on all the strips 1
b is such that it remains connected at its ends via a common lateral strip 1c. A heat sink made of a 1.5 mm-thick aluminum oxide / copper composite is selected as the carrier 2 of the comb-shaped structure thus generated. This heat sink is manufactured by a multi-layer DCB technology, and has a microchannel structure section 7 having a supply section and a discharge section 7a, 7b for liquid cooling of components therein. The aluminum oxide layer 2b is on the opposite side of the laser body so as to face the cooling channel structure, and therefore does not adversely affect the heat resistance of the heat sink. The aluminum oxide layer 2b is used only for improving the stability of the cooling portion which is easily bent due to the microchannel. At this point, the diamond is brazed directly to the cover layer of the microchannel made of copper using a 10 μm thick active brazing material 5. According to the invention, the length of the brazing surface is shorter than the length of the diamond strip 1b, so that the connecting strip 1c is not brazed to the laser body.
At the same time, the current supply is brazed to the laser body. 25μ
A m-thick copper foil is coated with gold and tin by galvanic current. Gold and tin are replaced with eutectic gold-tin brazing material 5 by re-melting before the actual brazing. At the same time, the copper foil is brazed to the laser body on the metallized portion 4a of the comb diamond and used as a current supply to the P-contact of the individual laser diode. Prior to galvanic brazing, the copper foil 4b is patterned by selective etching so that it has as many strips on one side of the copper foil as the laser body emitters before galvanic brazing. The copper foil is cut off at the end of the strip after brazing.

Third Embodiment The width corresponds to the width of the laser body, and the thickness is 0.3 to 1 mm.
Then, the upper surface of the CVD diamond substrate 1 whose length is 2 to 5 times the resonance length of the laser diode of the laser body 3 is metallized with gold 4a, and the entire front surface is metallized with gold 4d.
The lower surface is 5 μm only at the portion corresponding to 70% of the leading edge
Is sputtered with the eutectic gold / tin brazing material 5. In the present embodiment, the comb-shaped structure portion 1b described in the second embodiment is cut into diamond. In this embodiment, a cut is made in the entire metallized portions 4a and 5 (in the case of cutting, the graphite residue of the strip wall is formed on the edge. And the specific resistance is 1 to 2
mOhm cm). Further, at the end of each of the strips 1b, in front of the connecting strips 1c and behind the gold / tin brazing portion 5 on the lower surface of the base, cut portions 1d to be broken are formed at a depth of 0.15 mm. I do. The lower surface of the comb-shaped diamond 1 is brazed on a copper carrier 2 coated with 2 mm thick gold. The copper carrier 2 includes a flat hollow space 7 which is partially filled with liquid and has the function of a heat pipe. The connecting strips 1c can be cut off after cooling, leaving individual strips 1b. At this point, the individual conductive paths 4a are electrically connected to the copper cooling part and are reinforced with the copper cooling part by the gold 4b by 10 μm by the galvanic current. Next, a conductive path is deposited with eutectic lead / tin brazing material 6. This brazing material 6 is used exclusively for brazing the laser body to a heat sink adapted for expansion.

In order to control the individual emitters individually, it is necessary to remove the front metal part 4d and instead replace the gold bonding wire 4e for the copper carrier 1 after brazing the substrate. The gold bonding wire is cut again after being reinforced by galvanic current.

[Brief description of the drawings]

FIG. 1A is an exploded perspective view of a first embodiment of a diode laser device according to the present invention, and FIG. 1B is a transverse sectional view thereof.

FIG. 2A is an exploded perspective view of a second embodiment of the diode laser device according to the present invention, and FIG. 2B is a transverse sectional view thereof.

3A is an exploded perspective view of a third embodiment of the diode laser device according to the present invention, and FIG. 3B is a cross-sectional view thereof.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 1a Channel 1b Strip part 1c Horizontal strip part 2 Carrier 2a Copper layer 2b Reinforcement layer, ceramic layer 3 Bar-shaped laser body 3a Emitter 4a Thin film metallized part <2 μm 4b Thick metallized part on the upper surface side of base > 2 μm 4c Thick metallized portion on the lower surface of the substrate> 2 μm 4d Thin metallized portion on the front surface of the substrate <2 μm 4e Bonding wire 5 Brazing material layer between the substrate and the carrier 6 Between the substrate and the bar-shaped diode laser body Layer 7 hollow space 7a discharge section 7b supply section

Continued on the front page (72) Inventor Friedhelm Dorsch Germany Day 65185 Wiesbaden Herderstrasse 5 (72) Inventor Katja Juice Germany Day 07745 Jena Schomerstrasse 9a

Claims (13)

[Claims] The present invention has a bar-shaped laser body (3) and a heat sink, and the heat sink includes a carrier (2), and the carrier (2) is surface-bonded to a dielectric substrate (1) having high thermal conductivity. Made of a material having a coefficient of thermal expansion substantially greater than the coefficient of thermal expansion of the laser body (3) mounted to
Metallized portions (4a, 4b) for current induction and electrical contact are provided on the upper surface of the base (1), and the metallized portions (4a, 4b) are provided.
In a diode laser element on which a laser body (3) is mounted using a brazing material (6), a base (1) is formed by arranging individual partial bases (1b) in the width direction of the laser body. By configuring as a body, 25% or less of heat which is adapted to the thermal expansion of the laser body is provided in the mounting surface area of the laser body (3) on the upper surface of the row of partial substrates (1b) which are surface-bonded to the carrier (2) A diode laser device wherein an expansion portion is formed. 2. The number of the strips (1b) of the substrate (1) corresponds to the number of the emitters (3a) of the laser body (3), and the center of each of the emitters is aligned with the center of the strip. The diode laser element according to claim 1, characterized in that the laser body (3) is mounted on the strip (1b) so as to be arranged in a row. 3. The method according to claim 1, wherein the substrate is made of t-cBN or CVD diamond.
4. The diode laser element according to item 1. 4. The thin strip (1b) of the base is a horizontal strip (1c).
And are connected to each other through a horizontal strip (1
4. The diode laser element according to claim 1, wherein c) is coupled to one another without being surface-coupled to the carrier. 5. The individual striped metallizations (4a, 4b) of each strip (1b) are connected to at least one adjacent metallization via arbitrarily large electrical resistances. The diode laser device according to any one of claims 1 to 4, wherein the diode laser device is provided. 6. The carrier according to claim 1, wherein the carrier has a bulk copper or two copper layers which are surface-bonded to one another. 4. A diode laser element according to any one of the above. 7. The carrier (2a) has at least one closed hollow space (7), the hollow space (7) being partially filled with a liquid, which liquid is below the substrate (1). The convection type heat transfer is enabled by being conveyed from the heat transfer region of the carrier to the heat release region of the carrier by evaporation, condensed there, and returned to the heat transfer region of the carrier as a liquid, thereby functioning according to the principle of the heat pipe. Characterized in that
The diode laser device according to claim 1. 8. The carrier comprises at least two copper layers (2a), of which at least one copper layer has a cooling channel structure (7) formed therein, wherein the cooling channel structure (7) has a cooling channel structure. Liquid or gaseous medium enabling convective heat release is supplied via supply and discharge portions (7a, 7b) formed in the structure or another copper layer. 7. The diode laser device according to any one of 1 to 6. 9. In place of at least one copper layer of said at least two copper layers (2a), it consists of another material which improves the mechanical stability and / or thermal conductivity of the carrier (2). 2. The method according to claim 1, wherein a layer is provided.
9. The diode laser device according to any one of items 1 to 8. 10. The method for manufacturing a diode laser device according to claim 1, wherein the thin strip portion (1b) of the base (1) is first bonded to the support (2), and then the base (1) and the support are provided. A manufacturing method characterized in that a bar-shaped laser body (3) is brazed to an upper surface of a base (1) using a brazing material (6) without temporarily dissociating the bond with (2). 11. The method according to claim 10, wherein the strips (1b) of the substrate (1) are brazed onto the carrier (2) using hard wax (5). 12. The method as claimed in claim 10, wherein the laser body is brazed onto the metallized part of the substrate using a soft wax. Manufacturing method. 13. The method according to claim 10, wherein the laser body is brazed onto the metallized part of the substrate using a hard wax. Manufacturing method.