CN103427330A - 降低应力的激光器芯片结构和热沉结构及其制备方法 - Google Patents
降低应力的激光器芯片结构和热沉结构及其制备方法 Download PDFInfo
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- CN103427330A CN103427330A CN2013103027317A CN201310302731A CN103427330A CN 103427330 A CN103427330 A CN 103427330A CN 2013103027317 A CN2013103027317 A CN 2013103027317A CN 201310302731 A CN201310302731 A CN 201310302731A CN 103427330 A CN103427330 A CN 103427330A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
- H01S5/02484—Sapphire or diamond heat spreaders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310302731.7A CN103427330B (zh) | 2013-07-17 | 2013-07-17 | 降低应力的激光器芯片结构和热沉结构及其制备方法 |
PCT/CN2013/086231 WO2015007029A1 (zh) | 2013-07-17 | 2013-10-30 | 降低应力的激光器芯片结构和热沉结构及其制备方法 |
Applications Claiming Priority (1)
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CN201310302731.7A CN103427330B (zh) | 2013-07-17 | 2013-07-17 | 降低应力的激光器芯片结构和热沉结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN103427330A true CN103427330A (zh) | 2013-12-04 |
CN103427330B CN103427330B (zh) | 2016-06-08 |
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CN201310302731.7A Active CN103427330B (zh) | 2013-07-17 | 2013-07-17 | 降低应力的激光器芯片结构和热沉结构及其制备方法 |
Country Status (2)
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CN (1) | CN103427330B (zh) |
WO (1) | WO2015007029A1 (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105119143A (zh) * | 2015-08-28 | 2015-12-02 | 山东华光光电子有限公司 | 一种减少半导体激光器封装应力的芯片结构及减少封装应力的方法 |
CN105790071A (zh) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | 一种高功率半导体激光器及其制备方法 |
CN106329308A (zh) * | 2016-10-26 | 2017-01-11 | 西安炬光科技股份有限公司 | 一种低Smile的半导体激光器封装结构 |
CN106848831A (zh) * | 2017-04-10 | 2017-06-13 | 海信集团有限公司 | 一种to激光器支架 |
CN111740310A (zh) * | 2020-07-10 | 2020-10-02 | 西安立芯光电科技有限公司 | 一种实现半导体激光器芯片锁波中无跳模的方法 |
CN112103766A (zh) * | 2020-08-13 | 2020-12-18 | 长春理工大学 | 一种用于半导体激光器封装的过渡热沉结构及其使用方法 |
CN113540962A (zh) * | 2020-04-21 | 2021-10-22 | 青岛海信激光显示股份有限公司 | 激光器组件 |
CN113540963A (zh) * | 2020-04-21 | 2021-10-22 | 青岛海信激光显示股份有限公司 | 激光器组件 |
CN114342192A (zh) * | 2019-06-11 | 2022-04-12 | 通快光子学公司 | 绝缘激光冷却器 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110911949B (zh) * | 2019-10-24 | 2021-07-09 | 中国航空工业集团公司洛阳电光设备研究所 | 一种轻质、高导热激光晶体热沉及制作方法 |
Citations (5)
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JPH11346031A (ja) * | 1998-05-14 | 1999-12-14 | Jenoptik Ag | ダイオ―ドレ―ザ―素子及びその製造方法 |
US20010048698A1 (en) * | 2000-03-03 | 2001-12-06 | Dirk Lorenzen | Mounting substrate and heat sink for high-power diode laser bars |
CN1564403A (zh) * | 2004-03-23 | 2005-01-12 | 中国科学院长春光学精密机械与物理研究所 | 复合热沉半导体激光器结构及制备方法 |
JP2006339212A (ja) * | 2005-05-31 | 2006-12-14 | Sony Corp | 半導体レーザ装置並びに放熱部材および支持部材 |
CN203503972U (zh) * | 2013-07-17 | 2014-03-26 | 丹阳聚辰光电科技有限公司 | 降低应力的激光器芯片结构和热沉结构 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097744B (zh) * | 2011-01-14 | 2012-12-12 | 刘兴胜 | 一种高功率半导体激光器的封装方法 |
JP2012243960A (ja) * | 2011-05-19 | 2012-12-10 | Sharp Corp | 半導体レーザ装置 |
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2013
- 2013-07-17 CN CN201310302731.7A patent/CN103427330B/zh active Active
- 2013-10-30 WO PCT/CN2013/086231 patent/WO2015007029A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11346031A (ja) * | 1998-05-14 | 1999-12-14 | Jenoptik Ag | ダイオ―ドレ―ザ―素子及びその製造方法 |
US20010048698A1 (en) * | 2000-03-03 | 2001-12-06 | Dirk Lorenzen | Mounting substrate and heat sink for high-power diode laser bars |
CN1564403A (zh) * | 2004-03-23 | 2005-01-12 | 中国科学院长春光学精密机械与物理研究所 | 复合热沉半导体激光器结构及制备方法 |
JP2006339212A (ja) * | 2005-05-31 | 2006-12-14 | Sony Corp | 半導体レーザ装置並びに放熱部材および支持部材 |
CN203503972U (zh) * | 2013-07-17 | 2014-03-26 | 丹阳聚辰光电科技有限公司 | 降低应力的激光器芯片结构和热沉结构 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105119143A (zh) * | 2015-08-28 | 2015-12-02 | 山东华光光电子有限公司 | 一种减少半导体激光器封装应力的芯片结构及减少封装应力的方法 |
CN105790071A (zh) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | 一种高功率半导体激光器及其制备方法 |
CN106329308A (zh) * | 2016-10-26 | 2017-01-11 | 西安炬光科技股份有限公司 | 一种低Smile的半导体激光器封装结构 |
WO2018077078A1 (zh) * | 2016-10-26 | 2018-05-03 | 西安炬光科技股份有限公司 | 一种低Smile的半导体激光器封装结构 |
CN106848831A (zh) * | 2017-04-10 | 2017-06-13 | 海信集团有限公司 | 一种to激光器支架 |
CN114342192A (zh) * | 2019-06-11 | 2022-04-12 | 通快光子学公司 | 绝缘激光冷却器 |
CN113540962A (zh) * | 2020-04-21 | 2021-10-22 | 青岛海信激光显示股份有限公司 | 激光器组件 |
CN113540963A (zh) * | 2020-04-21 | 2021-10-22 | 青岛海信激光显示股份有限公司 | 激光器组件 |
CN113540963B (zh) * | 2020-04-21 | 2023-05-30 | 青岛海信激光显示股份有限公司 | 激光器组件 |
CN113540962B (zh) * | 2020-04-21 | 2023-07-28 | 青岛海信激光显示股份有限公司 | 激光器组件 |
CN111740310A (zh) * | 2020-07-10 | 2020-10-02 | 西安立芯光电科技有限公司 | 一种实现半导体激光器芯片锁波中无跳模的方法 |
CN112103766A (zh) * | 2020-08-13 | 2020-12-18 | 长春理工大学 | 一种用于半导体激光器封装的过渡热沉结构及其使用方法 |
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Publication number | Publication date |
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CN103427330B (zh) | 2016-06-08 |
WO2015007029A1 (zh) | 2015-01-22 |
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Effective date of registration: 20160518 Address after: 241000 science and Technology Pioneering Center of three mountain Economic Development Zone, Wuhu, Anhui Applicant after: WUHU ANRUI LASER TECHNOLOGY CO., LTD. Address before: Linquan street Suzhou Industrial Park, 215123 No. 608 in Jiangsu Province Applicant before: Li Fang Applicant before: Huang Wei Applicant before: Chen Shenbao |