JPH11307782A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JPH11307782A
JPH11307782A JP10131448A JP13144898A JPH11307782A JP H11307782 A JPH11307782 A JP H11307782A JP 10131448 A JP10131448 A JP 10131448A JP 13144898 A JP13144898 A JP 13144898A JP H11307782 A JPH11307782 A JP H11307782A
Authority
JP
Japan
Prior art keywords
film
diamond
insulating substrate
semiconductor device
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10131448A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11307782A5 (enExample
Inventor
Takeshi Fukada
武 深田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP10131448A priority Critical patent/JPH11307782A/ja
Priority to US09/296,042 priority patent/US6621535B1/en
Publication of JPH11307782A publication Critical patent/JPH11307782A/ja
Priority to US10/656,263 priority patent/US7508033B2/en
Publication of JPH11307782A5 publication Critical patent/JPH11307782A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP10131448A 1998-04-24 1998-04-24 半導体装置およびその作製方法 Withdrawn JPH11307782A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10131448A JPH11307782A (ja) 1998-04-24 1998-04-24 半導体装置およびその作製方法
US09/296,042 US6621535B1 (en) 1998-04-24 1999-04-21 Semiconductor device and method of manufacturing the same
US10/656,263 US7508033B2 (en) 1998-04-24 2003-09-08 Semiconductor device with diamond-like carbon film on backside of substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10131448A JPH11307782A (ja) 1998-04-24 1998-04-24 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH11307782A true JPH11307782A (ja) 1999-11-05
JPH11307782A5 JPH11307782A5 (enExample) 2005-07-14

Family

ID=15058204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10131448A Withdrawn JPH11307782A (ja) 1998-04-24 1998-04-24 半導体装置およびその作製方法

Country Status (2)

Country Link
US (2) US6621535B1 (enExample)
JP (1) JPH11307782A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004021516A1 (ja) * 2002-08-27 2004-03-11 Jsr Corporation 異方導電性シート、その製造方法およびその応用
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2005339895A (ja) * 2004-05-25 2005-12-08 Sekisui Chem Co Ltd プラズマ処理方法及びプラズマ処理装置
US8084371B2 (en) 2009-11-23 2011-12-27 Samsung Electronics Co., Ltd. Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor

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US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6261693B1 (en) * 1999-05-03 2001-07-17 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP4472073B2 (ja) * 1999-09-03 2010-06-02 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP4485027B2 (ja) * 2000-07-28 2010-06-16 エーユー オプトロニクス コーポレイション 液晶デバイス、液晶デバイスの製造装置、液晶デバイスの製造方法および配向膜形成方法
US6649937B2 (en) * 2002-03-26 2003-11-18 Intel Corporation Semiconductor device with components embedded in backside diamond layer
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CA2577831A1 (en) * 2004-09-17 2006-03-30 Boehringer Ingelheim International Gmbh Process for preparing macrocyclic hcv protease inhibitors
KR100669778B1 (ko) * 2004-11-20 2007-01-16 삼성에스디아이 주식회사 기판 및 박막 트랜지스터를 구비한 기판
KR20070008864A (ko) * 2005-07-12 2007-01-18 삼성전자주식회사 액정 표시 장치 및 이의 제조 방법

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004021516A1 (ja) * 2002-08-27 2004-03-11 Jsr Corporation 異方導電性シート、その製造方法およびその応用
US7393471B2 (en) 2002-08-27 2008-07-01 Jsr Corporation Anisotropic conductive sheet, its manufacturing method, and its application
JP2005134542A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 電気光学装置用基板及びその製造方法並びに電気光学装置
JP2005339895A (ja) * 2004-05-25 2005-12-08 Sekisui Chem Co Ltd プラズマ処理方法及びプラズマ処理装置
US8084371B2 (en) 2009-11-23 2011-12-27 Samsung Electronics Co., Ltd. Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor
US8310014B2 (en) 2009-11-23 2012-11-13 Samsung Electronics Co., Ltd. Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor

Also Published As

Publication number Publication date
US6621535B1 (en) 2003-09-16
US7508033B2 (en) 2009-03-24
US20040046173A1 (en) 2004-03-11

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