JPH11232868A - 半導体記憶集積回路 - Google Patents

半導体記憶集積回路

Info

Publication number
JPH11232868A
JPH11232868A JP10044353A JP4435398A JPH11232868A JP H11232868 A JPH11232868 A JP H11232868A JP 10044353 A JP10044353 A JP 10044353A JP 4435398 A JP4435398 A JP 4435398A JP H11232868 A JPH11232868 A JP H11232868A
Authority
JP
Japan
Prior art keywords
memory cell
flip
pair
flop circuit
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10044353A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11232868A5 (enExample
Inventor
Toshio Wada
俊男 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UMC Japan Co Ltd
Original Assignee
Nippon Foundry Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Foundry Inc filed Critical Nippon Foundry Inc
Priority to JP10044353A priority Critical patent/JPH11232868A/ja
Priority to US09/241,748 priority patent/US5943279A/en
Publication of JPH11232868A publication Critical patent/JPH11232868A/ja
Publication of JPH11232868A5 publication Critical patent/JPH11232868A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP10044353A 1998-02-10 1998-02-10 半導体記憶集積回路 Pending JPH11232868A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10044353A JPH11232868A (ja) 1998-02-10 1998-02-10 半導体記憶集積回路
US09/241,748 US5943279A (en) 1998-02-10 1999-02-01 Semiconductor memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10044353A JPH11232868A (ja) 1998-02-10 1998-02-10 半導体記憶集積回路

Publications (2)

Publication Number Publication Date
JPH11232868A true JPH11232868A (ja) 1999-08-27
JPH11232868A5 JPH11232868A5 (enExample) 2005-08-25

Family

ID=12689161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10044353A Pending JPH11232868A (ja) 1998-02-10 1998-02-10 半導体記憶集積回路

Country Status (2)

Country Link
US (1) US5943279A (enExample)
JP (1) JPH11232868A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281736A (ja) * 2003-03-17 2004-10-07 Nec Electronics Corp 半導体記憶装置
JPWO2019106989A1 (ja) * 2017-11-28 2020-12-17 ソニーセミコンダクタソリューションズ株式会社 表示装置及び電子機器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003223788A (ja) * 2002-01-29 2003-08-08 Hitachi Ltd 半導体集積回路装置
US7035132B2 (en) * 2002-04-30 2006-04-25 Stmicroelectronics Pvt. Ltd Memory architecture for increased speed and reduced power consumption
US6888187B2 (en) * 2002-08-26 2005-05-03 International Business Machines Corporation DRAM cell with enhanced SER immunity

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116099A (ja) * 1984-06-29 1986-01-24 Sharp Corp ダイナミック型半導体記憶装置
JPS61240497A (ja) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd 半導体メモリ
JPS6265295A (ja) * 1985-09-13 1987-03-24 Sanyo Electric Co Ltd ダイナミツクメモリ
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
GB9007789D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Method for dram sensing current control
US5684736A (en) * 1996-06-17 1997-11-04 Nuram Technology, Inc. Multilevel memory cell sense amplifier system
JP3720934B2 (ja) * 1996-12-17 2005-11-30 富士通株式会社 半導体記憶装置とデータ読み出し及び書き込み方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281736A (ja) * 2003-03-17 2004-10-07 Nec Electronics Corp 半導体記憶装置
JPWO2019106989A1 (ja) * 2017-11-28 2020-12-17 ソニーセミコンダクタソリューションズ株式会社 表示装置及び電子機器

Also Published As

Publication number Publication date
US5943279A (en) 1999-08-24

Similar Documents

Publication Publication Date Title
JP4110115B2 (ja) 半導体記憶装置
US6853593B1 (en) Semiconductor memory device having over-driving scheme
US6519195B2 (en) Semiconductor integrated circuit
JPH04370596A (ja) 高速センシング動作を実行するセンスアンプ
US6661714B2 (en) Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same
JP2008257833A (ja) センス増幅回路およびセンス増幅方法
US4722074A (en) Semiconductor storage unit with I/O bus precharging and equalization
US8472272B2 (en) Semiconductor device having hierarchical bit line structure
JP2004152394A (ja) 半導体記憶装置
JP2008219232A (ja) 半導体集積回路
JP2005085454A (ja) メモリアレイを含む集積回路装置、およびセンスアンプを有するメモリを組込んだ集積回路装置においてパワーゲートするための方法
US4803664A (en) Dynamic random access memory having a gain function
US5886553A (en) Semiconductor device having a latch circuit for latching data externally input
JP2005135461A (ja) 階層ワード線方式の半導体記憶装置と、それに使用されるサブワードドライバ回路
JPH11232868A (ja) 半導体記憶集積回路
US7808853B2 (en) Semiconductor memory device and method with a changeable substrate potential
US6925017B2 (en) Semiconductor device
US6735136B2 (en) Semiconductor memory device capable of preventing coupling noise between adjacent bit lines in different columns
JPH05135579A (ja) 半導体装置
US5574696A (en) Dynamic ram device having high read operation speed
JP2001167573A (ja) 半導体記憶装置
JPS5935114B2 (ja) 増巾回路
JPH07230690A (ja) 半導体記憶装置
JP2555322B2 (ja) ダイナミツク型ｒａｍ
KR0145859B1 (ko) 승압전압이 사용되는 컬럼선택수단을 구비하는 반도체 메모리

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050209

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050209

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20071218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071225

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080513