JPH11232868A5 - - Google Patents

Info

Publication number
JPH11232868A5
JPH11232868A5 JP1998044353A JP4435398A JPH11232868A5 JP H11232868 A5 JPH11232868 A5 JP H11232868A5 JP 1998044353 A JP1998044353 A JP 1998044353A JP 4435398 A JP4435398 A JP 4435398A JP H11232868 A5 JPH11232868 A5 JP H11232868A5
Authority
JP
Japan
Prior art keywords
flip
pair
memory cell
flop circuit
cell column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998044353A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11232868A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10044353A priority Critical patent/JPH11232868A/ja
Priority claimed from JP10044353A external-priority patent/JPH11232868A/ja
Priority to US09/241,748 priority patent/US5943279A/en
Publication of JPH11232868A publication Critical patent/JPH11232868A/ja
Publication of JPH11232868A5 publication Critical patent/JPH11232868A5/ja
Pending legal-status Critical Current

Links

JP10044353A 1998-02-10 1998-02-10 半導体記憶集積回路 Pending JPH11232868A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10044353A JPH11232868A (ja) 1998-02-10 1998-02-10 半導体記憶集積回路
US09/241,748 US5943279A (en) 1998-02-10 1999-02-01 Semiconductor memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10044353A JPH11232868A (ja) 1998-02-10 1998-02-10 半導体記憶集積回路

Publications (2)

Publication Number Publication Date
JPH11232868A JPH11232868A (ja) 1999-08-27
JPH11232868A5 true JPH11232868A5 (enExample) 2005-08-25

Family

ID=12689161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10044353A Pending JPH11232868A (ja) 1998-02-10 1998-02-10 半導体記憶集積回路

Country Status (2)

Country Link
US (1) US5943279A (enExample)
JP (1) JPH11232868A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003223788A (ja) * 2002-01-29 2003-08-08 Hitachi Ltd 半導体集積回路装置
US7035132B2 (en) * 2002-04-30 2006-04-25 Stmicroelectronics Pvt. Ltd Memory architecture for increased speed and reduced power consumption
US6888187B2 (en) * 2002-08-26 2005-05-03 International Business Machines Corporation DRAM cell with enhanced SER immunity
JP2004281736A (ja) * 2003-03-17 2004-10-07 Nec Electronics Corp 半導体記憶装置
TWI797162B (zh) * 2017-11-28 2023-04-01 日商索尼半導體解決方案公司 顯示裝置及電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6116099A (ja) * 1984-06-29 1986-01-24 Sharp Corp ダイナミック型半導体記憶装置
JPS61240497A (ja) * 1985-04-17 1986-10-25 Sanyo Electric Co Ltd 半導体メモリ
JPS6265295A (ja) * 1985-09-13 1987-03-24 Sanyo Electric Co Ltd ダイナミツクメモリ
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
GB9007789D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Method for dram sensing current control
US5684736A (en) * 1996-06-17 1997-11-04 Nuram Technology, Inc. Multilevel memory cell sense amplifier system
JP3720934B2 (ja) * 1996-12-17 2005-11-30 富士通株式会社 半導体記憶装置とデータ読み出し及び書き込み方法

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