JPH11204833A5 - - Google Patents

Info

Publication number
JPH11204833A5
JPH11204833A5 JP1998013204A JP1320498A JPH11204833A5 JP H11204833 A5 JPH11204833 A5 JP H11204833A5 JP 1998013204 A JP1998013204 A JP 1998013204A JP 1320498 A JP1320498 A JP 1320498A JP H11204833 A5 JPH11204833 A5 JP H11204833A5
Authority
JP
Japan
Prior art keywords
type
layer
type gan
heat treatment
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998013204A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204833A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP1320498A priority Critical patent/JPH11204833A/ja
Priority claimed from JP1320498A external-priority patent/JPH11204833A/ja
Priority to US09/224,356 priority patent/US6200827B1/en
Priority to EP99100082A priority patent/EP0929109B1/en
Priority to DE69922061T priority patent/DE69922061T2/de
Publication of JPH11204833A publication Critical patent/JPH11204833A/ja
Publication of JPH11204833A5 publication Critical patent/JPH11204833A5/ja
Pending legal-status Critical Current

Links

JP1320498A 1998-01-08 1998-01-08 半導体発光素子の製造方法 Pending JPH11204833A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1320498A JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法
US09/224,356 US6200827B1 (en) 1998-01-08 1999-01-04 Method for manufacturing a semiconductor light emitting device
EP99100082A EP0929109B1 (en) 1998-01-08 1999-01-05 Method for manufacturing a semiconductor light emitting device
DE69922061T DE69922061T2 (de) 1998-01-08 1999-01-05 Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1320498A JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPH11204833A JPH11204833A (ja) 1999-07-30
JPH11204833A5 true JPH11204833A5 (enExample) 2005-08-04

Family

ID=11826636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1320498A Pending JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法

Country Status (4)

Country Link
US (1) US6200827B1 (enExample)
EP (1) EP0929109B1 (enExample)
JP (1) JPH11204833A (enExample)
DE (1) DE69922061T2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727167B2 (en) 2000-10-13 2004-04-27 Emcore Corporation Method of making an aligned electrode on a semiconductor structure
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4830619B2 (ja) * 2006-05-10 2011-12-07 住友電気工業株式会社 集積半導体光素子およびその製造方法
TW201005994A (en) * 2008-07-23 2010-02-01 Walsin Lihwa Corp Light emitting diode and the method for manufacturing the same
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs
JP2013120936A (ja) 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
JP6561367B2 (ja) * 2014-02-26 2019-08-21 学校法人 名城大学 ｎｐｎ型窒化物半導体発光素子の製造方法
US10700239B1 (en) * 2019-03-21 2020-06-30 Mikro Mesa Technology Co., Ltd. Micro light-emitting diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751013A (en) * 1994-07-21 1998-05-12 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
JPH0888432A (ja) * 1994-09-16 1996-04-02 Rohm Co Ltd 半導体レーザの製法
JP3254931B2 (ja) * 1994-10-17 2002-02-12 松下電器産業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法

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