JPH10303502A5 - - Google Patents

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Publication number
JPH10303502A5
JPH10303502A5 JP1997107290A JP10729097A JPH10303502A5 JP H10303502 A5 JPH10303502 A5 JP H10303502A5 JP 1997107290 A JP1997107290 A JP 1997107290A JP 10729097 A JP10729097 A JP 10729097A JP H10303502 A5 JPH10303502 A5 JP H10303502A5
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JP
Japan
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contact layer
type gan
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP1997107290A
Other languages
English (en)
Japanese (ja)
Other versions
JP3912845B2 (ja
JPH10303502A (ja
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Publication date
Application filed filed Critical
Priority to JP10729097A priority Critical patent/JP3912845B2/ja
Priority claimed from JP10729097A external-priority patent/JP3912845B2/ja
Publication of JPH10303502A publication Critical patent/JPH10303502A/ja
Publication of JPH10303502A5 publication Critical patent/JPH10303502A5/ja
Application granted granted Critical
Publication of JP3912845B2 publication Critical patent/JP3912845B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP10729097A 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法 Expired - Fee Related JP3912845B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10729097A JP3912845B2 (ja) 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10729097A JP3912845B2 (ja) 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10303502A JPH10303502A (ja) 1998-11-13
JPH10303502A5 true JPH10303502A5 (enExample) 2005-03-17
JP3912845B2 JP3912845B2 (ja) 2007-05-09

Family

ID=14455357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10729097A Expired - Fee Related JP3912845B2 (ja) 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法

Country Status (1)

Country Link
JP (1) JP3912845B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3459599B2 (ja) 1999-09-24 2003-10-20 三洋電機株式会社 半導体発光素子
JP2002184581A (ja) 2000-12-13 2002-06-28 Sanyo Electric Co Ltd 有機発光素子
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4951865B2 (ja) * 2005-03-02 2012-06-13 日亜化学工業株式会社 半導体発光素子
JP2008047641A (ja) * 2006-08-11 2008-02-28 Sharp Corp 半導体レーザ素子とその製造方法、光ディスク装置、および光伝送モジュール
JP4985930B2 (ja) * 2006-11-08 2012-07-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP2015056647A (ja) 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置

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