JP3912845B2 - 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法 - Google Patents

窒化ガリウム系化合物半導体発光ダイオード及びその製造方法 Download PDF

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Publication number
JP3912845B2
JP3912845B2 JP10729097A JP10729097A JP3912845B2 JP 3912845 B2 JP3912845 B2 JP 3912845B2 JP 10729097 A JP10729097 A JP 10729097A JP 10729097 A JP10729097 A JP 10729097A JP 3912845 B2 JP3912845 B2 JP 3912845B2
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gallium nitride
compound semiconductor
layer
type
nitride compound
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JPH10303502A (ja
JPH10303502A5 (enExample
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俊雄 幡
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Sharp Corp
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Sharp Corp
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JP10729097A 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法 Expired - Fee Related JP3912845B2 (ja)

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JP10729097A JP3912845B2 (ja) 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法

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Application Number Priority Date Filing Date Title
JP10729097A JP3912845B2 (ja) 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法

Publications (3)

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JPH10303502A JPH10303502A (ja) 1998-11-13
JPH10303502A5 JPH10303502A5 (enExample) 2005-03-17
JP3912845B2 true JP3912845B2 (ja) 2007-05-09

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JP10729097A Expired - Fee Related JP3912845B2 (ja) 1997-04-24 1997-04-24 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3459599B2 (ja) 1999-09-24 2003-10-20 三洋電機株式会社 半導体発光素子
JP2002184581A (ja) 2000-12-13 2002-06-28 Sanyo Electric Co Ltd 有機発光素子
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
JP4951865B2 (ja) * 2005-03-02 2012-06-13 日亜化学工業株式会社 半導体発光素子
JP2008047641A (ja) * 2006-08-11 2008-02-28 Sharp Corp 半導体レーザ素子とその製造方法、光ディスク装置、および光伝送モジュール
JP4985930B2 (ja) * 2006-11-08 2012-07-25 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
JP2015056647A (ja) 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置

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