JPH11204833A - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法

Info

Publication number
JPH11204833A
JPH11204833A JP1320498A JP1320498A JPH11204833A JP H11204833 A JPH11204833 A JP H11204833A JP 1320498 A JP1320498 A JP 1320498A JP 1320498 A JP1320498 A JP 1320498A JP H11204833 A JPH11204833 A JP H11204833A
Authority
JP
Japan
Prior art keywords
layer
type
mask
heat treatment
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1320498A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204833A5 (enExample
Inventor
Yoshinori Kimura
義則 木村
Hiroyuki Ota
啓之 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP1320498A priority Critical patent/JPH11204833A/ja
Priority to US09/224,356 priority patent/US6200827B1/en
Priority to EP99100082A priority patent/EP0929109B1/en
Priority to DE69922061T priority patent/DE69922061T2/de
Publication of JPH11204833A publication Critical patent/JPH11204833A/ja
Publication of JPH11204833A5 publication Critical patent/JPH11204833A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
JP1320498A 1998-01-08 1998-01-08 半導体発光素子の製造方法 Pending JPH11204833A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1320498A JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法
US09/224,356 US6200827B1 (en) 1998-01-08 1999-01-04 Method for manufacturing a semiconductor light emitting device
EP99100082A EP0929109B1 (en) 1998-01-08 1999-01-05 Method for manufacturing a semiconductor light emitting device
DE69922061T DE69922061T2 (de) 1998-01-08 1999-01-05 Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1320498A JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPH11204833A true JPH11204833A (ja) 1999-07-30
JPH11204833A5 JPH11204833A5 (enExample) 2005-08-04

Family

ID=11826636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1320498A Pending JPH11204833A (ja) 1998-01-08 1998-01-08 半導体発光素子の製造方法

Country Status (4)

Country Link
US (1) US6200827B1 (enExample)
EP (1) EP0929109B1 (enExample)
JP (1) JPH11204833A (enExample)
DE (1) DE69922061T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305744A (ja) * 2006-05-10 2007-11-22 Sumitomo Electric Ind Ltd 集積半導体光素子およびその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727167B2 (en) 2000-10-13 2004-04-27 Emcore Corporation Method of making an aligned electrode on a semiconductor structure
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
TW201005994A (en) * 2008-07-23 2010-02-01 Walsin Lihwa Corp Light emitting diode and the method for manufacturing the same
US8592309B2 (en) * 2009-11-06 2013-11-26 Ultratech, Inc. Laser spike annealing for GaN LEDs
JP2013120936A (ja) 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
JP6561367B2 (ja) * 2014-02-26 2019-08-21 学校法人 名城大学 ｎｐｎ型窒化物半導体発光素子の製造方法
US10700239B1 (en) * 2019-03-21 2020-06-30 Mikro Mesa Technology Co., Ltd. Micro light-emitting diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751013A (en) * 1994-07-21 1998-05-12 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
JPH0888432A (ja) * 1994-09-16 1996-04-02 Rohm Co Ltd 半導体レーザの製法
JP3254931B2 (ja) * 1994-10-17 2002-02-12 松下電器産業株式会社 ｐ型窒化ガリウム系化合物半導体の製造方法
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007305744A (ja) * 2006-05-10 2007-11-22 Sumitomo Electric Ind Ltd 集積半導体光素子およびその製造方法

Also Published As

Publication number Publication date
DE69922061D1 (de) 2004-12-30
US6200827B1 (en) 2001-03-13
DE69922061T2 (de) 2005-11-24
EP0929109B1 (en) 2004-11-24
EP0929109A1 (en) 1999-07-14

Similar Documents

Publication Publication Date Title
JP3457511B2 (ja) 半導体装置及びその製造方法
JP3209096B2 (ja) ３族窒化物化合物半導体発光素子
JP3394488B2 (ja) 窒化ガリウム系半導体発光素子及びその製造方法
JP3365607B2 (ja) ＧａＮ系化合物半導体装置及びその製造方法
JP3325479B2 (ja) 化合物半導体素子及びその製造方法
JP4023121B2 (ja) ｎ型電極、ＩＩＩ族窒化物系化合物半導体素子、ｎ型電極の製造方法、及びＩＩＩ族窒化物系化合物半導体素子の製造方法
JP3917223B2 (ja) 半導体発光素子の製法
JP3612985B2 (ja) 窒化ガリウム系化合物半導体素子及びその製造方法
JPH07263748A (ja) ３族窒化物半導体発光素子及びその製造方法
JP2000091637A (ja) 半導体発光素子の製法
JP3311275B2 (ja) 窒化物系半導体発光素子
JPH11204833A (ja) 半導体発光素子の製造方法
JP3767863B2 (ja) 半導体発光素子およびその製法
JP3735960B2 (ja) 半導体発光素子
JPH07176826A (ja) 窒化ガリウム系化合物半導体レーザ素子
JPH11204833A5 (enExample)
JP3336855B2 (ja) ３族窒化物化合物半導体発光素子
JP2001015852A (ja) ｐ型のＩＩＩ族窒化物半導体層上の電極構造とその形成方法
JP2008277867A (ja) 半導体発光素子の製造方法
JP3776538B2 (ja) 半導体発光素子およびその製法
JP4048662B2 (ja) 半導体発光素子
JP3403665B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP2790235B2 (ja) 窒化ガリウム系化合物半導体のｐ型化方法
JPH10303502A (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
JPH11346035A (ja) 窒化ガリウム系化合物半導体発光素子の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050107

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071003

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080219