DE69922061T2 - Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur - Google Patents
Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur Download PDFInfo
- Publication number
- DE69922061T2 DE69922061T2 DE69922061T DE69922061T DE69922061T2 DE 69922061 T2 DE69922061 T2 DE 69922061T2 DE 69922061 T DE69922061 T DE 69922061T DE 69922061 T DE69922061 T DE 69922061T DE 69922061 T2 DE69922061 T2 DE 69922061T2
- Authority
- DE
- Germany
- Prior art keywords
- type
- iii
- nitride semiconductor
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims description 49
- 150000004767 nitrides Chemical class 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000000137 annealing Methods 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- 230000000415 inactivating effect Effects 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 56
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000011247 coating layer Substances 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- -1 hydrogen compound Chemical class 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
Landscapes
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1320498A JPH11204833A (ja) | 1998-01-08 | 1998-01-08 | 半導体発光素子の製造方法 |
| JP1320498 | 1998-01-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69922061D1 DE69922061D1 (de) | 2004-12-30 |
| DE69922061T2 true DE69922061T2 (de) | 2005-11-24 |
Family
ID=11826636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69922061T Expired - Lifetime DE69922061T2 (de) | 1998-01-08 | 1999-01-05 | Verfahren zur Herstellung einer lichtemittierenden Halbleiterbauelements mit einer Stapelstruktur |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6200827B1 (enExample) |
| EP (1) | EP0929109B1 (enExample) |
| JP (1) | JPH11204833A (enExample) |
| DE (1) | DE69922061T2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727167B2 (en) | 2000-10-13 | 2004-04-27 | Emcore Corporation | Method of making an aligned electrode on a semiconductor structure |
| US7795623B2 (en) | 2004-06-30 | 2010-09-14 | Cree, Inc. | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures |
| US20060002442A1 (en) * | 2004-06-30 | 2006-01-05 | Kevin Haberern | Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures |
| US7335920B2 (en) | 2005-01-24 | 2008-02-26 | Cree, Inc. | LED with current confinement structure and surface roughening |
| JP4830619B2 (ja) * | 2006-05-10 | 2011-12-07 | 住友電気工業株式会社 | 集積半導体光素子およびその製造方法 |
| TW201005994A (en) * | 2008-07-23 | 2010-02-01 | Walsin Lihwa Corp | Light emitting diode and the method for manufacturing the same |
| US8592309B2 (en) * | 2009-11-06 | 2013-11-26 | Ultratech, Inc. | Laser spike annealing for GaN LEDs |
| JP2013120936A (ja) | 2011-12-07 | 2013-06-17 | Ultratech Inc | パターン効果を低減したＧａＮＬＥＤのレーザーアニール |
| JP6561367B2 (ja) * | 2014-02-26 | 2019-08-21 | 学校法人 名城大学 | ｎｐｎ型窒化物半導体発光素子の製造方法 |
| US10700239B1 (en) * | 2019-03-21 | 2020-06-30 | Mikro Mesa Technology Co., Ltd. | Micro light-emitting diode |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5751013A (en) * | 1994-07-21 | 1998-05-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and production method thereof |
| JPH0888432A (ja) * | 1994-09-16 | 1996-04-02 | Rohm Co Ltd | 半導体レーザの製法 |
| JP3254931B2 (ja) * | 1994-10-17 | 2002-02-12 | 松下電器産業株式会社 | ｐ型窒化ガリウム系化合物半導体の製造方法 |
| JPH08222797A (ja) * | 1995-01-17 | 1996-08-30 | Hewlett Packard Co <Hp> | 半導体装置およびその製造方法 |
-
1998
- 1998-01-08 JP JP1320498A patent/JPH11204833A/ja active Pending
-
1999
- 1999-01-04 US US09/224,356 patent/US6200827B1/en not_active Expired - Lifetime
- 1999-01-05 DE DE69922061T patent/DE69922061T2/de not_active Expired - Lifetime
- 1999-01-05 EP EP99100082A patent/EP0929109B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69922061D1 (de) | 2004-12-30 |
| JPH11204833A (ja) | 1999-07-30 |
| US6200827B1 (en) | 2001-03-13 |
| EP0929109B1 (en) | 2004-11-24 |
| EP0929109A1 (en) | 1999-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SHOWA DENKO K.K., TOKIO/TOKYO, JP |