JPH11121458A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH11121458A
JPH11121458A JP9288705A JP28870597A JPH11121458A JP H11121458 A JPH11121458 A JP H11121458A JP 9288705 A JP9288705 A JP 9288705A JP 28870597 A JP28870597 A JP 28870597A JP H11121458 A JPH11121458 A JP H11121458A
Authority
JP
Japan
Prior art keywords
film
electrode pad
groove
metal layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9288705A
Other languages
English (en)
Inventor
Mitsuhiro Matsutomo
光浩 松友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP9288705A priority Critical patent/JPH11121458A/ja
Publication of JPH11121458A publication Critical patent/JPH11121458A/ja
Priority to US09/874,265 priority patent/US6479375B2/en
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】 【課題】半導体装置の電極パッドにおいて、ボンディン
グ時の超音波振動によるアルミ剥がれを防止する。 【解決手段】電極パッドを構成するＡｌ合金膜８の下地
酸化膜３に部分的に溝４を形成し、バリアメタルとして
のＴｉ膜５，ＴｉＮ膜６Ａ及びＷ膜７を埋込形成した後
に、Ａｌ合金膜８をスパッタ法で形成し、パターニング
して電極パッドとする。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は半導体装置に関し、
特に半導体装置の電極パッドの構造に関する。
【０００２】
【従来の技術】半導体チップとリードフレームの内部リ
ードとをワイヤで接続する為に、半導体チップ上には、
一般的に配線と一体的に電極パッドが形成されている。
図２を用いて従来の半導体チップの電極パッドの構造を
説明する。
【０００３】図２（ａ），（ｂ）は従来の電極パッドの
平面図及びＢ−Ｂ線断面図である。
【０００４】図２（ａ），（ｂ）に示すとおり、この電
極パッドは、半導体基板１上に形成され平坦化されたボ
ロンリンガラス（ＢＰＳＧ）膜２及び酸化膜３と、この
上に形成されたチタン（Ｔｉ）膜５，窒化チタン（Ｔｉ
Ｎ）膜６Ａ及びアルミ（Ａｌ）合金膜８の積層化膜から
形成されている。ここで、積層化を施す理由は、Ａｌ配
線の微細化に伴い、信頼性の向上を図るためであり、バ
リアメタルとしてのＴｉ膜と密着性を向上させる為のＴ
ｉＮ膜の積層は必要不可欠な構造となっている。
【０００５】しかしこの積層構造では、Ｔｉ膜５と酸化
膜３の界面で極薄の酸化チタン化合物が生成されやす
い。酸化チタン化合物は脆く、電極パッドにワイヤボン
ディングする際の応力により、プラズマ酸化膜３とＴｉ
膜５の界面で剥がれを生じ易い。尚、ボンディングの際
の応力はＡｌ合金膜が薄くなるほど大きくなってゆく
為、Ａｌ合金膜８の膜厚が薄くなるほど剥がれを生じ易
い。
【０００６】近年、半導体チップは大容量化に伴い、一
層、アルミ配線幅は小さくなっており、それに伴い、ア
ルミ配線膜厚は薄膜化されてきている。従って、電極パ
ッドも薄膜化され、ボンディング時の剥がれの危険性は
近年ますます増大してきているといえる。
【０００７】尚、特開昭６０−２２７４８３号公報に
は、基板表面を粗面にして半田層を設け、半田層と基板
との密着性を向上させる方法が提案されている。しかし
酸化膜３の表面を単に粗面にするだけでは、ボンディン
グ時の応力が偏り、その箇所からのＡｌ合金膜の剥がれ
（以下アルミ剥がれという）耐性の劣化が予測される。
また、粗面にＡｌ合金をスパッタすると、Ａｌ合金膜は
一様な厚さで形成される為、Ａｌ合金膜の表面も粗面に
なってしまい、この状態でボンディングすると部分的な
共晶合金となり、安定したボンディング接合が得られな
いという問題も生ずる。
【０００８】
【発明が解決しようとする課題】ボンディング時のアル
ミ剥がれは、ボンディング時に印加する超音波振動が、
局所的に加わることによって生じる。
【０００９】また、この不具合は、Ａｌ合金膜を積層化
することによって生じるＴｉ膜と酸化膜の界面のもろさ
が支配的となっている。
【００１０】従来、Ａｌ合金膜の厚さが１μｍ以上と大
きい場合、超音波振動によるストレスは、Ａｌ合金膜に
吸収されやすく、特に問題とならないが、近年のＡｌ合
金膜の薄膜化により、超音波振動のストレスがＴｉ膜と
酸化膜の界面に伝わりやすく、本不具合が顕在化してき
た。
【００１１】また、電極パッドの縮小化によるボンディ
ングボールの縮小化も、超音波振動の局部的印加という
点で、本不具合の加速要因となっている。
【００１２】なお、本不具合は、アルミ剥がれを生じな
い場合でも、Ｔｉ膜と酸化膜の界面で剥離を生じ、ボン
ディング接合強度の低下を招きやすく、市場環境ストレ
スに対する信頼性は低下してしまう。
【００１３】本発明の目的は、先述したような問題点を
解決し、アルミ剥がれを生ずることのない電極パッドを
有する信頼性の高い半導体装置を提供することにある。
【００１４】
【課題を解決しようとする手段】本発明の半導体装置
は、半導体基板上に絶縁膜を介して形成された電極パッ
ドを有する半導体装置において、前記電極パッドの下面
は前記絶縁膜に形成された溝内の金属層に接続されてい
ることを特徴とするものであり、特に溝内に埋め込む金
属層を高融点金属とするものである。
【００１５】
【作用】従って、電極パッドの下層酸化膜に部分的に金
属層を形成することにより、ボンディング時の超音波振
動時のストレスによるＴｉ膜と酸化膜の剥離を抑制し、
ボンディング時のアルミ剥がれを防止することが出来
る。この効果は、電極パッドの下層の酸化膜に部分的に
金属層を形成することにより、酸化膜と接するＴｉ膜が
酸化膜に埋め込まれた形状となることにより得られる。
【００１６】これは、超音波振動時の水平方向の応力に
対し、垂直方向のＴｉ膜を形成することにより、水平方
向に生じるＴｉ膜と酸化膜の剥離を抑制させる為であ
る。なお、Ｔｉ膜が酸化膜に埋め込まれている為に、水
平方向の強度は向上している。
【００１７】
【発明の実施の形態】次に本発明について図面を参照し
て説明する。図１（ａ），（ｂ）は本発明の実施の形態
を説明する為の電極パッド近傍の平面図及びＡ−Ａ線断
面図である。
【００１８】図１（ａ），（ｂ）を参照すると本発明の
半導体装置は、半導体基板１上に形成された厚さ約１μ
ｍの酸化膜３と、この酸化膜３に設けられた直径０．８
μｍの溝４と、この溝４を含む酸化膜３上に形成された
厚さ約３０ｎｍのＴｉ膜５と厚さ約１００μｍのＴｉＮ
膜６Ａと、溝４内に埋め込まれたＷ膜７と、このＷ膜７
とＴｉＮ膜６Ａ上に形成された厚さ約６００ｎｍのＡｌ
合金膜８とからなる電極パッドとを有している。尚図１
（ｂ）において６Ｂは反射防止用のＴｉＮ膜、９はＰＳ
Ｇ等からなるパッシベーション膜である。
【００１９】この様に構成された本実施の形態によれ
ば、電極パッドは溝４内に形成されたＷ膜７等の金属層
１０に接続されているため、ワイヤをボンディングする
場合でも剥がれを生じることはない。
【００２０】次に、本実施の形態の製造方法について図
面を参照して詳細に説明する。
【００２１】図１（ａ），（ｂ）に示した電極パッドに
おいて、約０．８μｍ径、深さ約１μｍの金属層１０を
下地酸化膜層に部分的に形成している。この時、金属層
１０としてはＴｉ膜５を約３０ｎｍ、ＴｉＮ膜６Ａを約
１００ｎｍ及び、溝４の空洞部に埋め込まれたＷ膜７か
らなり、これらはスパッタ法やＣＶＤ法により形成され
る。そして、上記部分的金属層上にＡｌ合金膜８を約６
００ｎｍ形成し、電極パッドが形成される。
【００２２】本構造の様な部分的金属層１０の形成は次
のとおりである。まず下地層間膜であるＢＰＳＧ膜２及
び酸化膜３の形成後、パターニング及びドライエッチン
グで溝４を形成した後、Ｔｉ膜５，ＴｉＮ膜６Ａを形成
する。
【００２３】次に、Ｗ膜７を形成し、溝部以外のＷ膜７
をエッチバックする。その後、Ａｌ合金をスパッタし、
パターニング及びエッチングすることにより、アルミ配
線と一体的に電極パッドが形成される。
【００２４】尚、近年の半導体チップは多層配線化され
ており、本実施の形態の部分的金属層の形成は、上下配
線間の接合の為のビアホール形成と同時に出来るため、
工程数の増加は伴わない。又溝４内に埋め込む金属とし
ては、ビアホール内に埋める金属と同一のＷやＭｏ等を
用いる。
【００２５】上記構造の電極パッドは、界面剥離を生じ
やすいＴｉ膜５を局部的に下地酸化膜層に垂直に、あた
かもスパイクするように形成している。そのため、Ｔｉ
膜５と酸化膜層の界面を拡大すると共に、ボンディング
時の超音波振動の応力に対し、強固で有利な構造となっ
ている。
【００２６】これは、超音波振動が水平方向に加わるこ
とに対し、垂直なＴｉ膜５が存在するため、剥離が生じ
ない為である。また、酸化膜３に埋め込まれた金属層１
０は側面の酸化膜で固定されていることにより、Ｔｉ膜
５と酸化膜３の微少剥離を生じても、Ａｌ合金膜８が剥
がれることはない。
【００２７】尚、上記実施の形態においては、溝４の断
面形状を円として説明したが、これに限定されるもので
はなく、正方形等であってもよいことは勿論である。
【００２８】
【発明の効果】先述したように本発明は、電極パッドの
最下層であるチタン膜が、下地酸化膜層に埋め込んだ形
状となっており、かつ、局部的に埋め込まれた金属層の
側面は酸化膜で固定されているため、電極パッドはワイ
ヤボンディング時の超音波振動に対して強固な構造とな
っている。
【００２９】従って、電極パッドにボンディングする場
合、Ｔｉ膜と酸化膜の界面剥離が生じにくくなり、安定
したボンディング強度が得られる。この為高い信頼性を
有する半導体装置が得られるという効果がある。
【図面の簡単な説明】
【図１】本発明の実施の形態を説明する為の電極パッド
近傍の平面図及び断面図。
【図２】従来の電極パッドを説明する為の平面図及び断
面図。
【符号の説明】
１ 半導体基板 ２ ＢＰＳＧ膜 ３ 酸化膜 ４ 溝 ５ Ｔｉ膜 ６Ａ，６Ｂ ＴｉＮ膜 ７ Ｗ膜 ８ Ａｌ合金膜 ９ パッシベーション膜

Claims (3)

    【特許請求の範囲】
  1. 【請求項１】 半導体基板上に絶縁膜を介して形成され
    た電極パッドを有する半導体装置において、前記電極パ
    ッドの下面は前記絶縁膜に形成された溝内の金属層に接
    続されていることを特徴とする半導体装置。
  2. 【請求項２】 溝内の金属層は高融点金属からなる請求
    項１記載の半導体装置。
  3. 【請求項３】 溝内の金属層はビアホール内に埋め込ま
    れる金属層と同一である請求項１記載の半導体装置。
JP9288705A 1997-10-21 1997-10-21 半導体装置 Pending JPH11121458A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9288705A JPH11121458A (ja) 1997-10-21 1997-10-21 半導体装置
US09/874,265 US6479375B2 (en) 1997-10-21 2001-06-06 Method of forming a semiconductor device having a non-peeling electrode pad portion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9288705A JPH11121458A (ja) 1997-10-21 1997-10-21 半導体装置

Publications (1)

Publication Number Publication Date
JPH11121458A true JPH11121458A (ja) 1999-04-30

Family

ID=17733627

Family Applications (1)

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Country Status (2)

Country Link
US (1) US6479375B2 (ja)
JP (1) JPH11121458A (ja)

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