JPH11116398A5 - - Google Patents

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Publication number
JPH11116398A5
JPH11116398A5 JP1997282223A JP28222397A JPH11116398A5 JP H11116398 A5 JPH11116398 A5 JP H11116398A5 JP 1997282223 A JP1997282223 A JP 1997282223A JP 28222397 A JP28222397 A JP 28222397A JP H11116398 A5 JPH11116398 A5 JP H11116398A5
Authority
JP
Japan
Prior art keywords
crucible
silicon carbide
producing
single crystal
crystal according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997282223A
Other languages
English (en)
Japanese (ja)
Other versions
JP4122548B2 (ja
JPH11116398A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP28222397A priority Critical patent/JP4122548B2/ja
Priority claimed from JP28222397A external-priority patent/JP4122548B2/ja
Publication of JPH11116398A publication Critical patent/JPH11116398A/ja
Publication of JPH11116398A5 publication Critical patent/JPH11116398A5/ja
Application granted granted Critical
Publication of JP4122548B2 publication Critical patent/JP4122548B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP28222397A 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法 Expired - Lifetime JP4122548B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28222397A JP4122548B2 (ja) 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28222397A JP4122548B2 (ja) 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008015928A Division JP4819069B2 (ja) 2008-01-28 2008-01-28 炭化珪素単結晶の製造方法

Publications (3)

Publication Number Publication Date
JPH11116398A JPH11116398A (ja) 1999-04-27
JPH11116398A5 true JPH11116398A5 (enrdf_load_html_response) 2005-03-17
JP4122548B2 JP4122548B2 (ja) 2008-07-23

Family

ID=17649670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28222397A Expired - Lifetime JP4122548B2 (ja) 1997-10-15 1997-10-15 炭化珪素単結晶の製造方法

Country Status (1)

Country Link
JP (1) JP4122548B2 (enrdf_load_html_response)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6547877B2 (en) * 1996-01-22 2003-04-15 The Fox Group, Inc. Tantalum crucible fabrication and treatment
US6562130B2 (en) * 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
US6537371B2 (en) * 1997-01-22 2003-03-25 The Fox Group, Inc. Niobium crucible fabrication and treatment
JP4691292B2 (ja) * 1999-07-07 2011-06-01 エスアイクリスタル アクチエンゲゼルシャフト ＳｉＣ種結晶の外周壁を有する種結晶ホルダ
EP1200650B1 (de) 1999-07-07 2003-04-09 Siemens Aktiengesellschaft Vorrichtung zur sublimationszüchtung eines sic-einkristalls mit folienausgekleidetem tiegel
US6562131B2 (en) * 1999-07-20 2003-05-13 The Fox Group, Inc. Method for growing single crystal silicon carbide
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
US6514338B2 (en) * 1999-12-27 2003-02-04 Showa Denko Kabushiki Kaisha Method and apparatus for producing silicon carbide single crystal
US7056383B2 (en) 2004-02-13 2006-06-06 The Fox Group, Inc. Tantalum based crucible
JP2006001787A (ja) * 2004-06-17 2006-01-05 Hitachi Chem Co Ltd フッ化カルシウム結晶育成ルツボ、フッ化カルシウム結晶の製造方法及びフッ化カルシウム結晶
JP4522898B2 (ja) * 2005-03-25 2010-08-11 日本碍子株式会社 単結晶製造装置
EP2037011B1 (en) 2006-06-16 2012-09-05 Sumitomo Electric Industries, Ltd. Method of growing a single crystal of nitride of group iii element
JP2008120617A (ja) * 2006-11-09 2008-05-29 Bridgestone Corp 炭化珪素単結晶の製造方法
JP5213096B2 (ja) * 2007-03-23 2013-06-19 学校法人関西学院 単結晶炭化ケイ素の液相エピタキシャル成長方法、単結晶炭化ケイ素基板の製造方法、及び単結晶炭化ケイ素基板
JP5163445B2 (ja) * 2008-11-25 2013-03-13 住友電気工業株式会社 結晶製造方法
US8535600B2 (en) 2009-03-23 2013-09-17 Kabushiki Kaisha Toyota Chuo Kenkyusho High temperature-resistant article, method for producing the same, and high temperature-resistant adhesive
CN107739209A (zh) * 2011-08-05 2018-02-27 科卢斯博知识产权有限公司 坩埚材料
JP5548174B2 (ja) * 2011-09-12 2014-07-16 東洋炭素株式会社 ＰＩＴ炭素芯ＴａＣチューブの製造方法、及び、ＰＩＴ炭素芯ＴａＣチューブ
JP2013189355A (ja) * 2012-03-15 2013-09-26 Sumitomo Electric Ind Ltd 炭化珪素単結晶の製造方法および製造装置
JP5549722B2 (ja) * 2012-10-26 2014-07-16 住友電気工業株式会社 結晶製造方法
CN108070909A (zh) * 2016-11-17 2018-05-25 上海新昇半导体科技有限公司 坩埚、坩埚的制备方法及4H-SiC晶体的生长方法
KR102675266B1 (ko) 2017-12-04 2024-06-14 신에쓰 가가꾸 고교 가부시끼가이샤 탄화탄탈 피복 탄소 재료 및 그 제조 방법, 반도체 단결정 제조 장치용 부재
JP6609300B2 (ja) * 2017-12-21 2019-11-20 國家中山科學研究院 特定形状の炭化ケイ素の育成装置
CN113122921A (zh) * 2020-06-05 2021-07-16 北京世纪金光半导体有限公司 一种生长低碳包裹物大尺寸高纯单晶的装置及方法
CN116695089B (zh) * 2023-08-09 2023-10-24 通威微电子有限公司 中继环碳化钽镀膜装置和方法

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