JPH10506717A - 加速度センサの製造法 - Google Patents
加速度センサの製造法Info
- Publication number
- JPH10506717A JPH10506717A JP9506144A JP50614497A JPH10506717A JP H10506717 A JPH10506717 A JP H10506717A JP 9506144 A JP9506144 A JP 9506144A JP 50614497 A JP50614497 A JP 50614497A JP H10506717 A JPH10506717 A JP H10506717A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polysilicon
- etching
- temporary
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.一時層(2)の上でポリ珪素層(6)として析出される珪素層(4)を、エ ピタキシー装置中で、一時層(2)を有する支持体(1)の上に析出させ、この 場合、ポリ珪素層(6)の上に、光学的な方法によってエッチングマスクとして パターン化される第一のフォトラッカー層(7)を塗布し、この場合、ポリ珪素 層(6)の中に、エッチングマスクを通して、ポリ珪素層(6)の上面から一時 層(2)にまで延在するパターン(8)を形成させ、かつこの場合、一時層(2 )を、パターン(8)の下方で除去するようなセンサ、殊に加速度センサを製造 するための方法において、ポリ珪素層(6)の表面を、第一のフォトラッカー層 (7)の塗布の前に平坦化処理で後加工することを特徴とする、センサ、殊に加 速度センサの製造法。 2.平坦化処理を、フォトラッカー(9)を塗布し、エッチング工程を実施し、 ポリ珪素層(6)およびフォトラッカー層(9)を、ほぼ同じエッチング速度で エッチングすることによって行う、請求項1に記載の方法。 3.フォトラッカー(9)のエッチング後に、もう1つの層のフォトラッカー( 9)を塗布し、かつもう1つのエッチング処理を実施する、請求項2に記載 の方法。 4.エッチング処理を、プラズマエッチング処理として実施する、請求項2また は3に記載の方法。 5.平坦化処理を、化学的機械的研磨によって行う、請求項1に記載の方法。 6.一時層(2)の上で珪素層(4)の析出の前に、エピタキシー装置中で、ポ リ珪素出発層(3)を析出させる、請求項1から5までのいずれか1項に記載の 方法。 7.一時層(2)が、支持体(1)の全表面を覆う、請求項1から6までのいず れか1項に記載の方法。 8.一時層(2)を、珪素層(4)の析出の前に、エピタキシー装置中でパター ン化する、請求項1から6までのいずれか1項に記載の方法。 9.支持体(1)が単結晶性珪素からなり、かつ珪素層(4)を、一時層(2) が施されていない領域で、単結晶性の珪素層(5)として成長させる、請求項8 に記載の方法。 10.ポリ珪素層(6)の平坦化工程を、多結晶性の珪素層(6)および単結晶性 の珪素層(5)が、1つの共通の平坦な表面を形成するまでの間実施する、請求 項9に記載の方法。 11.単結晶性の珪素層(5)中で、電子回路(12)を形成させ、かつ共通の平 坦な平面上に、回路(12)からポリ珪素層(6)にまで達する電導路(1 1)を設ける、請求項10に記載の方法。 12.平坦化処理後に、ポリ珪素層(6)と単結晶性の珪素層(5)との間の僅か な段が存在し、この段を調整の目印として使用する、請求項1から6までのいず れか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19526691A DE19526691A1 (de) | 1995-07-21 | 1995-07-21 | Verfahren zur Herstellung von Beschleunigungssensoren |
DE19526691.9 | 1995-07-21 | ||
PCT/DE1996/001236 WO1997004319A1 (de) | 1995-07-21 | 1996-07-09 | Verfahren zur herstellung von beschleunigungssensoren |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10506717A true JPH10506717A (ja) | 1998-06-30 |
JP3989545B2 JP3989545B2 (ja) | 2007-10-10 |
Family
ID=7767446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50614497A Expired - Lifetime JP3989545B2 (ja) | 1995-07-21 | 1996-07-09 | 加速度センサの製造法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5937275A (ja) |
JP (1) | JP3989545B2 (ja) |
DE (2) | DE19526691A1 (ja) |
WO (1) | WO1997004319A1 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19960094A1 (de) * | 1999-12-14 | 2001-07-05 | Bosch Gmbh Robert | Verfahren zur mikromechanischen Herstellung eines Halbleiterelements, insbesondere Beschleunigungssensors |
DE10017976A1 (de) * | 2000-04-11 | 2001-10-18 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
US6544810B1 (en) | 2000-08-31 | 2003-04-08 | Motorola, Inc. | Capacitively sensed micromachined component and method of manufacturing |
US6635509B1 (en) | 2002-04-12 | 2003-10-21 | Dalsa Semiconductor Inc. | Wafer-level MEMS packaging |
US6902656B2 (en) * | 2002-05-24 | 2005-06-07 | Dalsa Semiconductor Inc. | Fabrication of microstructures with vacuum-sealed cavity |
US6896821B2 (en) * | 2002-08-23 | 2005-05-24 | Dalsa Semiconductor Inc. | Fabrication of MEMS devices with spin-on glass |
US6770506B2 (en) * | 2002-12-23 | 2004-08-03 | Motorola, Inc. | Release etch method for micromachined sensors |
US6916728B2 (en) * | 2002-12-23 | 2005-07-12 | Freescale Semiconductor, Inc. | Method for forming a semiconductor structure through epitaxial growth |
US7122395B2 (en) * | 2002-12-23 | 2006-10-17 | Motorola, Inc. | Method of forming semiconductor devices through epitaxy |
US7514283B2 (en) * | 2003-03-20 | 2009-04-07 | Robert Bosch Gmbh | Method of fabricating electromechanical device having a controlled atmosphere |
US7075160B2 (en) | 2003-06-04 | 2006-07-11 | Robert Bosch Gmbh | Microelectromechanical systems and devices having thin film encapsulated mechanical structures |
US6936491B2 (en) | 2003-06-04 | 2005-08-30 | Robert Bosch Gmbh | Method of fabricating microelectromechanical systems and devices having trench isolated contacts |
US6952041B2 (en) | 2003-07-25 | 2005-10-04 | Robert Bosch Gmbh | Anchors for microelectromechanical systems having an SOI substrate, and method of fabricating same |
US7068125B2 (en) | 2004-03-04 | 2006-06-27 | Robert Bosch Gmbh | Temperature controlled MEMS resonator and method for controlling resonator frequency |
US7102467B2 (en) | 2004-04-28 | 2006-09-05 | Robert Bosch Gmbh | Method for adjusting the frequency of a MEMS resonator |
CN1985195A (zh) * | 2004-05-21 | 2007-06-20 | 皮雷利&C.有限公司 | 具有高深宽比的光栅结构的制造方法 |
US20070170528A1 (en) | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
US8071411B2 (en) * | 2007-12-21 | 2011-12-06 | The Royal Institution For The Advancement Of Learning/Mcgill University | Low temperature ceramic microelectromechanical structures |
WO2011019702A1 (en) | 2009-08-13 | 2011-02-17 | Analog Devices, Inc. | Mems in-plane resonators |
US8616056B2 (en) | 2010-11-05 | 2013-12-31 | Analog Devices, Inc. | BAW gyroscope with bottom electrode |
US8631700B2 (en) | 2010-11-05 | 2014-01-21 | Analog Devices, Inc. | Resonating sensor with mechanical constraints |
US9091544B2 (en) | 2010-11-05 | 2015-07-28 | Analog Devices, Inc. | XY-axis shell-type gyroscopes with reduced cross-talk sensitivity and/or mode matching |
EP2646773B1 (en) | 2010-12-01 | 2015-06-24 | Analog Devices, Inc. | Apparatus and method for anchoring electrodes in mems devices |
US9039976B2 (en) | 2011-01-31 | 2015-05-26 | Analog Devices, Inc. | MEMS sensors with closed nodal anchors for operation in an in-plane contour mode |
US9448069B2 (en) | 2012-10-01 | 2016-09-20 | The Royal Institution For The Advancement Of Learning/Mcgill University | Microelectromechanical bulk acoustic wave devices and methods |
CN103342476B (zh) * | 2013-07-03 | 2015-08-26 | 中国科学院光电技术研究所 | 用于抑制光学表面中高频误差的离子束牺牲层加工方法 |
US9709595B2 (en) | 2013-11-14 | 2017-07-18 | Analog Devices, Inc. | Method and apparatus for detecting linear and rotational movement |
US9599471B2 (en) | 2013-11-14 | 2017-03-21 | Analog Devices, Inc. | Dual use of a ring structure as gyroscope and accelerometer |
US10746548B2 (en) | 2014-11-04 | 2020-08-18 | Analog Devices, Inc. | Ring gyroscope structural features |
US9869552B2 (en) * | 2015-03-20 | 2018-01-16 | Analog Devices, Inc. | Gyroscope that compensates for fluctuations in sensitivity |
CN105161413B (zh) * | 2015-09-21 | 2018-07-17 | 京东方科技集团股份有限公司 | 加工多晶硅表面的方法以及加工基板表面的方法 |
US10732351B2 (en) | 2018-04-23 | 2020-08-04 | Facebook Technologies, Llc | Gratings with variable depths formed using planarization for waveguide displays |
US11656077B2 (en) | 2019-01-31 | 2023-05-23 | Analog Devices, Inc. | Pseudo-extensional mode MEMS ring gyroscope |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63129613A (ja) * | 1986-11-20 | 1988-06-02 | Fujitsu Ltd | 気相成長方法 |
EP0287318B1 (en) * | 1987-04-14 | 1995-03-15 | Fairchild Semiconductor Corporation | Integrated transistor and manufacturing process therefor |
US4879258A (en) * | 1988-08-31 | 1989-11-07 | Texas Instruments Incorporated | Integrated circuit planarization by mechanical polishing |
JPH03214625A (ja) * | 1990-01-18 | 1991-09-19 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5323047A (en) * | 1992-01-31 | 1994-06-21 | Sgs-Thomson Microelectronics, Inc. | Structure formed by a method of patterning a submicron semiconductor layer |
US5422289A (en) * | 1992-04-27 | 1995-06-06 | National Semiconductor Corporation | Method of manufacturing a fully planarized MOSFET and resulting structure |
DE4309206C1 (de) * | 1993-03-22 | 1994-09-15 | Texas Instruments Deutschland | Halbleitervorrichtung mit einem Kraft- und/oder Beschleunigungssensor |
DE4318466B4 (de) * | 1993-06-03 | 2004-12-09 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Sensors |
DE4333099A1 (de) * | 1993-09-29 | 1995-03-30 | Bosch Gmbh Robert | Kraftsensor und Verfahren zur Herstellung eines Kraftsensors |
DE4341271B4 (de) * | 1993-12-03 | 2005-11-03 | Robert Bosch Gmbh | Beschleunigungssensor aus kristallinem Material und Verfahren zur Herstellung dieses Beschleunigungssensors |
JPH0936385A (ja) * | 1995-07-25 | 1997-02-07 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
-
1995
- 1995-07-21 DE DE19526691A patent/DE19526691A1/de not_active Withdrawn
-
1996
- 1996-07-09 JP JP50614497A patent/JP3989545B2/ja not_active Expired - Lifetime
- 1996-07-09 DE DE19680590T patent/DE19680590B4/de not_active Expired - Lifetime
- 1996-07-09 US US08/809,945 patent/US5937275A/en not_active Expired - Lifetime
- 1996-07-09 WO PCT/DE1996/001236 patent/WO1997004319A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
DE19680590D2 (de) | 1997-08-21 |
DE19526691A1 (de) | 1997-01-23 |
US5937275A (en) | 1999-08-10 |
DE19680590B4 (de) | 2008-09-18 |
WO1997004319A1 (de) | 1997-02-06 |
JP3989545B2 (ja) | 2007-10-10 |
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