JPH1040682A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH1040682A
JPH1040682A JP8193757A JP19375796A JPH1040682A JP H1040682 A JPH1040682 A JP H1040682A JP 8193757 A JP8193757 A JP 8193757A JP 19375796 A JP19375796 A JP 19375796A JP H1040682 A JPH1040682 A JP H1040682A
Authority
JP
Japan
Prior art keywords
output signal
memory array
line
memory
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8193757A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1040682A5 (OSRAM
Inventor
Kazutami Arimoto
和民 有本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8193757A priority Critical patent/JPH1040682A/ja
Priority to TW085114163A priority patent/TW323366B/zh
Priority to KR1019970000979A priority patent/KR100240538B1/ko
Priority to US08/787,483 priority patent/US5781495A/en
Publication of JPH1040682A publication Critical patent/JPH1040682A/ja
Priority to US09/053,677 priority patent/US6249474B1/en
Publication of JPH1040682A5 publication Critical patent/JPH1040682A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP8193757A 1996-07-23 1996-07-23 半導体記憶装置 Pending JPH1040682A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP8193757A JPH1040682A (ja) 1996-07-23 1996-07-23 半導体記憶装置
TW085114163A TW323366B (en) 1996-07-23 1996-11-19 Semiconductor memory device(1)
KR1019970000979A KR100240538B1 (ko) 1996-07-23 1997-01-15 반도체 기억 장치
US08/787,483 US5781495A (en) 1996-07-23 1997-01-22 Semiconductor memory device for multi-bit or multi-bank architectures
US09/053,677 US6249474B1 (en) 1996-07-23 1998-04-02 Semiconductor memory device for multi-bit or multi-bank architectures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8193757A JPH1040682A (ja) 1996-07-23 1996-07-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH1040682A true JPH1040682A (ja) 1998-02-13
JPH1040682A5 JPH1040682A5 (OSRAM) 2004-08-12

Family

ID=16313313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8193757A Pending JPH1040682A (ja) 1996-07-23 1996-07-23 半導体記憶装置

Country Status (4)

Country Link
US (2) US5781495A (OSRAM)
JP (1) JPH1040682A (OSRAM)
KR (1) KR100240538B1 (OSRAM)
TW (1) TW323366B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982698A (en) * 1998-07-14 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Multi-bank system semiconductor memory device capable of operating at high speed
JP2009020997A (ja) * 2007-07-10 2009-01-29 Hynix Semiconductor Inc 半導体メモリ装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224667B1 (ko) * 1996-12-10 1999-10-15 윤종용 계층적 입출력라인 구조를 갖는 반도체 메모리장치 및 이의 배치방법
US6011710A (en) * 1997-10-30 2000-01-04 Hewlett-Packard Company Capacitance reducing memory system, device and method
US5892725A (en) * 1998-05-13 1999-04-06 International Business Machines Corporation Memory in a data processing system having uneven cell grouping on bitlines and method therefor
KR100281125B1 (ko) * 1998-12-29 2001-03-02 김영환 비휘발성 강유전체 메모리장치
US6333866B1 (en) * 1998-09-28 2001-12-25 Texas Instruments Incorporated Semiconductor device array having dense memory cell array and heirarchical bit line scheme
KR100287882B1 (ko) * 1998-11-03 2001-05-02 김영환 비휘발성 강유전체 메모리장치
JP2000150820A (ja) * 1998-11-09 2000-05-30 Mitsubishi Electric Corp 半導体記憶装置
KR100304962B1 (ko) 1998-11-24 2001-10-20 김영환 텅스텐비트라인형성방법
JP2001053243A (ja) * 1999-08-06 2001-02-23 Hitachi Ltd 半導体記憶装置とメモリモジュール
KR100310992B1 (ko) 1999-09-03 2001-10-18 윤종용 멀티 뱅크 메모리 장치 및 입출력 라인 배치방법
DE10004109C2 (de) * 2000-01-31 2001-11-29 Infineon Technologies Ag Speicherbaustein mit geringer Zugriffszeit
KR100326086B1 (ko) * 2000-02-03 2002-03-07 윤종용 반도체 메모리 장치 및 이 장치의 프리차지 방법
KR100364801B1 (ko) * 2000-08-30 2002-12-16 주식회사 하이닉스반도체 반도체 메모리 장치
KR100385956B1 (ko) * 2001-02-14 2003-06-02 삼성전자주식회사 효율적인 칼럼 리던던시 스킴을 갖는 반도체 메모리장치
KR100408421B1 (ko) * 2002-01-16 2003-12-03 삼성전자주식회사 서브-어레이의 개수에 관계없이 계층형 입출력 라인구조를 가지는 반도체 메모리 장치
JP4559738B2 (ja) * 2002-04-10 2010-10-13 ハイニックス セミコンダクター インコーポレイテッド 非四角形メモリバンクを有するメモリチップアーキテクチャ、及びメモリバンク配置方法
KR100733406B1 (ko) 2004-05-10 2007-06-29 주식회사 하이닉스반도체 글로벌 데이터 버스를 구비한 반도체 메모리 소자
JP2006216693A (ja) * 2005-02-02 2006-08-17 Toshiba Corp 半導体記憶装置
JP2010257552A (ja) * 2009-04-28 2010-11-11 Elpida Memory Inc 半導体記憶装置
KR101060899B1 (ko) * 2009-12-23 2011-08-30 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 동작 방법
JP5622715B2 (ja) * 2011-12-28 2014-11-12 株式会社東芝 半導体記憶装置
US9286423B2 (en) * 2012-03-30 2016-03-15 International Business Machines Corporation Cycle accurate and cycle reproducible memory for an FPGA based hardware accelerator
US9230046B2 (en) 2012-03-30 2016-01-05 International Business Machines Corporation Generating clock signals for a cycle accurate, cycle reproducible FPGA based hardware accelerator

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1199639A3 (en) * 1990-12-25 2004-12-08 Mitsubishi Denki Kabushiki Kaisha A semiconductor memory device with a large storage capacity memory and a fast speed memory
JP3283547B2 (ja) * 1991-08-29 2002-05-20 株式会社日立製作所 半導体メモリ装置
JP3244340B2 (ja) * 1993-05-24 2002-01-07 三菱電機株式会社 同期型半導体記憶装置
US5734620A (en) * 1995-04-05 1998-03-31 Micron Technology, Inc. Hierarchical memory array structure with redundant components having electrically isolated bit lines

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5982698A (en) * 1998-07-14 1999-11-09 Mitsubishi Denki Kabushiki Kaisha Multi-bank system semiconductor memory device capable of operating at high speed
JP2009020997A (ja) * 2007-07-10 2009-01-29 Hynix Semiconductor Inc 半導体メモリ装置

Also Published As

Publication number Publication date
KR980011441A (ko) 1998-04-30
US6249474B1 (en) 2001-06-19
KR100240538B1 (ko) 2000-01-15
US5781495A (en) 1998-07-14
TW323366B (en) 1997-12-21

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