JPH10284760A - 受発光ダイオードアレイチップの製造方法 - Google Patents

受発光ダイオードアレイチップの製造方法

Info

Publication number
JPH10284760A
JPH10284760A JP9356297A JP9356297A JPH10284760A JP H10284760 A JPH10284760 A JP H10284760A JP 9356297 A JP9356297 A JP 9356297A JP 9356297 A JP9356297 A JP 9356297A JP H10284760 A JPH10284760 A JP H10284760A
Authority
JP
Japan
Prior art keywords
chip
insulating film
interlayer insulating
forming
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9356297A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10284760A5 (enExample
Inventor
Takaatsu Shimizu
孝篤 清水
Mitsuhiko Ogiwara
光彦 荻原
Masumi Yanaka
真澄 谷中
Hiroshi Hamano
広 浜野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP9356297A priority Critical patent/JPH10284760A/ja
Priority to EP98103193A priority patent/EP0871226B1/en
Priority to US09/031,534 priority patent/US5972729A/en
Publication of JPH10284760A publication Critical patent/JPH10284760A/ja
Publication of JPH10284760A5 publication Critical patent/JPH10284760A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/975Substrate or mask aligning feature

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Light Receiving Elements (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
JP9356297A 1997-04-11 1997-04-11 受発光ダイオードアレイチップの製造方法 Pending JPH10284760A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9356297A JPH10284760A (ja) 1997-04-11 1997-04-11 受発光ダイオードアレイチップの製造方法
EP98103193A EP0871226B1 (en) 1997-04-11 1998-02-24 Method of manufacturing light-receiving/emitting diode array chip
US09/031,534 US5972729A (en) 1997-04-11 1998-02-27 Method of manufacturing light-receiving/emitting diode array chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9356297A JPH10284760A (ja) 1997-04-11 1997-04-11 受発光ダイオードアレイチップの製造方法

Publications (2)

Publication Number Publication Date
JPH10284760A true JPH10284760A (ja) 1998-10-23
JPH10284760A5 JPH10284760A5 (enExample) 2004-09-24

Family

ID=14085700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9356297A Pending JPH10284760A (ja) 1997-04-11 1997-04-11 受発光ダイオードアレイチップの製造方法

Country Status (3)

Country Link
US (1) US5972729A (enExample)
EP (1) EP0871226B1 (enExample)
JP (1) JPH10284760A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147352A (ja) * 2009-01-19 2009-07-02 Oki Data Corp 半導体装置、ledヘッド及び画像形成装置
JP2015189036A (ja) * 2014-03-27 2015-11-02 株式会社沖データ 半導体装置、露光ヘッド及び画像形成装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4457427B2 (ja) * 1999-03-18 2010-04-28 ソニー株式会社 半導体発光装置とその製造方法
JP4002143B2 (ja) * 2002-07-10 2007-10-31 株式会社ルネサステクノロジ 半導体装置の製造方法
ATE364236T1 (de) * 2004-07-12 2007-06-15 Haeberlein Lehr Ulla Modulares stecksystem zur sicheren lagerung von horizontal gestapelten photovoltaik-modulen beim transport
US20070012240A1 (en) * 2005-07-13 2007-01-18 Sia Chin H Light emitting diode with at least two light emitting zones and method for manufacture
JP4302720B2 (ja) * 2006-06-28 2009-07-29 株式会社沖データ 半導体装置、ledヘッド及び画像形成装置
US9429867B2 (en) * 2014-03-27 2016-08-30 Oki Data Corporation Semiconductor apparatus, exposing head, and image forming apparatus
US11710942B2 (en) * 2017-12-13 2023-07-25 Sony Corporation Method of manufacturing light-emitting module, light-emitting module, and device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2536834Y2 (ja) * 1986-09-05 1997-05-28 ローム 株式会社 半導体素子チツプ
ES2007453A6 (es) * 1988-03-25 1989-06-16 Sinetics Sa Impresora versatil de textos y graficos.
US5053836A (en) * 1989-11-21 1991-10-01 Eastman Kodak Company Cleaving of diode arrays with scribing channels
US4997793A (en) * 1989-11-21 1991-03-05 Eastman Kodak Company Method of improving cleaving of diode arrays
JPH05259505A (ja) * 1992-03-16 1993-10-08 Nisshin Steel Co Ltd 発光ダイオードアレイチップ
JPH05294011A (ja) * 1992-04-17 1993-11-09 Nisshin Steel Co Ltd 発光ダイオードアレイチップ
US5430325A (en) * 1992-06-30 1995-07-04 Rohm Co. Ltd. Semiconductor chip having dummy pattern
JPH0685319A (ja) * 1992-09-02 1994-03-25 Nisshin Steel Co Ltd 発光ダイオードアレイチップの製造方法
JPH0685320A (ja) * 1992-09-02 1994-03-25 Nisshin Steel Co Ltd 発光ダイオードアレイチップの製造方法
JPH0685318A (ja) * 1992-09-02 1994-03-25 Nisshin Steel Co Ltd 発光ダイオードアレイチップの製造方法
JPH0685057A (ja) * 1992-09-02 1994-03-25 Nisshin Steel Co Ltd 半導体チップのダイシング方法
US5523590A (en) * 1993-10-20 1996-06-04 Oki Electric Industry Co., Ltd. LED array with insulating films
JPH08279479A (ja) * 1995-04-07 1996-10-22 Hitachi Cable Ltd 発光ダイオードアレイのダイシング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147352A (ja) * 2009-01-19 2009-07-02 Oki Data Corp 半導体装置、ledヘッド及び画像形成装置
JP2015189036A (ja) * 2014-03-27 2015-11-02 株式会社沖データ 半導体装置、露光ヘッド及び画像形成装置

Also Published As

Publication number Publication date
EP0871226B1 (en) 2012-08-29
EP0871226A3 (en) 1999-05-19
US5972729A (en) 1999-10-26
EP0871226A2 (en) 1998-10-14

Similar Documents

Publication Publication Date Title
EP1418624B1 (en) Light emitting diode array and print head
US7871834B2 (en) Combined semiconductor apparatus with thin semiconductor films
EP1434271A2 (en) Integrated semiconductor device comprising semiconductor thin films and optical print head
JPH10284760A (ja) 受発光ダイオードアレイチップの製造方法
JP4326884B2 (ja) 半導体装置、ledヘッド、及び画像形成装置
US6342402B1 (en) Light emitting diode array and method of forming the same
JP3053750B2 (ja) 端面発光型ledの製造方法
JPH09102473A (ja) 半導体装置の製造方法
JP2008112883A (ja) 発光ダイオードアレイ及び発光ダイオードアレイの製造方法
JP4126163B2 (ja) 半導体装置、ledチップ及びその製造方法
EP4604182A1 (en) Method for producing bonded light-emitting element wafer
JP3784475B2 (ja) Ledアレイ及びledプリンタ
JP4026998B2 (ja) Ledアレイ及びその製造方法
JP3797893B2 (ja) 半導体素子の電極構造およびそれを用いて作製された半導体レーザ素子
JPH0716441Y2 (ja) Ledアレイ
JPH0799344A (ja) 半導体発光装置の製造方法
JP2001102635A (ja) Ledアレイチップ及びその製造方法
JPH07314772A (ja) Ledヘッドの製造方法
JPH08298343A (ja) 端面発光型ledアレイ及びその製造方法
JP2008041840A (ja) 発光ダイオードアレイ及び発光ダイオードアレイの製造方法
JPH11345786A (ja) 半導体発光素子の製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20041012

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041214

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060801