JPH1020197A - 反射屈折光学系及びその調整方法 - Google Patents

反射屈折光学系及びその調整方法

Info

Publication number
JPH1020197A
JPH1020197A JP8188365A JP18836596A JPH1020197A JP H1020197 A JPH1020197 A JP H1020197A JP 8188365 A JP8188365 A JP 8188365A JP 18836596 A JP18836596 A JP 18836596A JP H1020197 A JPH1020197 A JP H1020197A
Authority
JP
Japan
Prior art keywords
optical system
image
optical
lens
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8188365A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1020197A5 (enExample
Inventor
Tetsuo Takahashi
哲男 高橋
Yasuhiro Omura
泰弘 大村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8188365A priority Critical patent/JPH1020197A/ja
Priority to KR1019970022137A priority patent/KR100470953B1/ko
Priority to US08/882,939 priority patent/US5835284A/en
Publication of JPH1020197A publication Critical patent/JPH1020197A/ja
Publication of JPH1020197A5 publication Critical patent/JPH1020197A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8188365A 1996-06-28 1996-06-28 反射屈折光学系及びその調整方法 Pending JPH1020197A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8188365A JPH1020197A (ja) 1996-06-28 1996-06-28 反射屈折光学系及びその調整方法
KR1019970022137A KR100470953B1 (ko) 1996-06-28 1997-05-30 반사굴절광학계및그조정방법
US08/882,939 US5835284A (en) 1996-06-28 1997-06-26 Catadioptric optical system and adjusting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8188365A JPH1020197A (ja) 1996-06-28 1996-06-28 反射屈折光学系及びその調整方法

Publications (2)

Publication Number Publication Date
JPH1020197A true JPH1020197A (ja) 1998-01-23
JPH1020197A5 JPH1020197A5 (enExample) 2004-10-21

Family

ID=16222350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8188365A Pending JPH1020197A (ja) 1996-06-28 1996-06-28 反射屈折光学系及びその調整方法

Country Status (3)

Country Link
US (1) US5835284A (enExample)
JP (1) JPH1020197A (enExample)
KR (1) KR100470953B1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
WO1999052004A1 (en) * 1998-04-07 1999-10-14 Nikon Corporation Projection exposure apparatus and method, and reflection refraction optical system
JP2001237165A (ja) * 2000-02-23 2001-08-31 Canon Inc 露光装置
EP0964307A3 (en) * 1998-06-08 2001-09-05 Nikon Corporation Projection exposure apparatus and method
JP2011047951A (ja) * 1999-07-07 2011-03-10 Kla-Tencor Corp 試料を検査するための装置および対物光学系
KR101388297B1 (ko) * 2006-08-15 2014-04-22 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투사노출장치의 투사대물렌즈

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969882A (en) * 1997-04-01 1999-10-19 Nikon Corporation Catadioptric optical system
DE19939088A1 (de) 1998-08-18 2000-02-24 Nikon Corp Belichtungsvorrichtung und -verfahren
JP4717974B2 (ja) * 1999-07-13 2011-07-06 株式会社ニコン 反射屈折光学系及び該光学系を備える投影露光装置
US7301605B2 (en) * 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2002083766A (ja) 2000-06-19 2002-03-22 Nikon Corp 投影光学系、該光学系の製造方法、及び前記光学系を備えた投影露光装置
DE10136387A1 (de) * 2001-07-26 2003-02-13 Zeiss Carl Objektiv, insbesondere Objektiv für die Halbleiter-Lithographie
TW575904B (en) * 2001-08-21 2004-02-11 Asml Us Inc Optical projection for microlithography
US7136220B2 (en) * 2001-08-21 2006-11-14 Carl Zeiss Smt Ag Catadioptric reduction lens

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156737A (ja) * 1984-12-27 1986-07-16 Canon Inc 回路の製造方法及び露光装置
US5052763A (en) * 1990-08-28 1991-10-01 International Business Machines Corporation Optical system with two subsystems separately correcting odd aberrations and together correcting even aberrations
JPH0821955A (ja) * 1994-07-07 1996-01-23 Nikon Corp 反射屈折縮小投影光学系
US5668673A (en) * 1991-08-05 1997-09-16 Nikon Corporation Catadioptric reduction projection optical system
JPH06331932A (ja) * 1993-05-19 1994-12-02 Topcon Corp 投影光学装置
JP2817615B2 (ja) * 1994-01-31 1998-10-30 日本電気株式会社 縮小投影露光装置
JP3232473B2 (ja) * 1996-01-10 2001-11-26 キヤノン株式会社 投影露光装置及びそれを用いたデバイスの製造方法
EP1079253A4 (en) * 1998-04-07 2004-09-01 Nikon Corp DEVICE AND PROCESS FOR PROJECTION EXPOSURE, AND OPTICAL SYSTEM WITH REFLECTION AND REFRACTION

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
US6627365B1 (en) 1998-03-20 2003-09-30 Nikon Corporation Photomask and projection exposure apparatus
WO1999052004A1 (en) * 1998-04-07 1999-10-14 Nikon Corporation Projection exposure apparatus and method, and reflection refraction optical system
US6707616B1 (en) 1998-04-07 2004-03-16 Nikon Corporation Projection exposure apparatus, projection exposure method and catadioptric optical system
EP0964307A3 (en) * 1998-06-08 2001-09-05 Nikon Corporation Projection exposure apparatus and method
EP1293832A1 (en) * 1998-06-08 2003-03-19 Nikon Corporation Projection exposure apparatus and method
JP2011047951A (ja) * 1999-07-07 2011-03-10 Kla-Tencor Corp 試料を検査するための装置および対物光学系
JP2001237165A (ja) * 2000-02-23 2001-08-31 Canon Inc 露光装置
KR101388297B1 (ko) * 2006-08-15 2014-04-22 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투사노출장치의 투사대물렌즈

Also Published As

Publication number Publication date
US5835284A (en) 1998-11-10
KR100470953B1 (ko) 2005-06-17
KR980005331A (ko) 1998-03-30

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