JPH10150033A5 - - Google Patents

Info

Publication number
JPH10150033A5
JPH10150033A5 JP1996307943A JP30794396A JPH10150033A5 JP H10150033 A5 JPH10150033 A5 JP H10150033A5 JP 1996307943 A JP1996307943 A JP 1996307943A JP 30794396 A JP30794396 A JP 30794396A JP H10150033 A5 JPH10150033 A5 JP H10150033A5
Authority
JP
Japan
Prior art keywords
benzene
bis
interlayer insulating
insulating film
alkoxysilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996307943A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10150033A (ja
JP4082626B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP30794396A priority Critical patent/JP4082626B2/ja
Priority claimed from JP30794396A external-priority patent/JP4082626B2/ja
Publication of JPH10150033A publication Critical patent/JPH10150033A/ja
Publication of JPH10150033A5 publication Critical patent/JPH10150033A5/ja
Application granted granted Critical
Publication of JP4082626B2 publication Critical patent/JP4082626B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30794396A 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜 Expired - Fee Related JP4082626B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30794396A JP4082626B2 (ja) 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30794396A JP4082626B2 (ja) 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜

Publications (3)

Publication Number Publication Date
JPH10150033A JPH10150033A (ja) 1998-06-02
JPH10150033A5 true JPH10150033A5 (enExample) 2004-10-21
JP4082626B2 JP4082626B2 (ja) 2008-04-30

Family

ID=17975051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30794396A Expired - Fee Related JP4082626B2 (ja) 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜

Country Status (1)

Country Link
JP (1) JP4082626B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350704B1 (en) 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6368535B1 (en) * 1999-08-06 2002-04-09 Dow Corning Corporation Condensation reaction curable silsesquioxane resin composition and methods for the synthesis and cure thereof
US6414377B1 (en) * 1999-08-10 2002-07-02 International Business Machines Corporation Low k dielectric materials with inherent copper ion migration barrier
JP3795333B2 (ja) 2000-03-30 2006-07-12 東京応化工業株式会社 反射防止膜形成用組成物
JP4572444B2 (ja) * 2000-05-22 2010-11-04 Jsr株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
US6577802B1 (en) * 2000-07-13 2003-06-10 Corning Incorporated Application of silane-enhanced adhesion promoters for optical fibers and fiber ribbons
JP4495464B2 (ja) * 2002-01-17 2010-07-07 シレクス オサケユキチュア 集積回路の製造方法
AU2003267629A1 (en) 2002-09-19 2004-04-08 Optitune Public Limited Company Substrate based component packaging and assembly
JP4602700B2 (ja) * 2004-06-03 2010-12-22 東京応化工業株式会社 シリカ系被膜形成用塗布液
US9051491B2 (en) * 2006-06-13 2015-06-09 Braggone Oy Carbosilane polymer compositions for anti-reflective coatings
WO2008096656A1 (ja) * 2007-02-07 2008-08-14 Jsr Corporation ケイ素含有ポリマーおよびその合成方法、膜形成用組成物、ならびにシリカ系膜およびその形成方法
JP5245474B2 (ja) * 2008-03-14 2013-07-24 信越化学工業株式会社 スクリーン印刷用樹脂組成物
JP5625301B2 (ja) * 2009-09-30 2014-11-19 Jsr株式会社 シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法

Similar Documents

Publication Publication Date Title
JPH10150033A5 (enExample)
TW401376B (en) An alkoxysilane/organic polymer composition for use in producing an insulating thin film and uses thereof
TWI284140B (en) Method for forming porous silica film
EP1463121A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
WO2001086709A3 (en) Simplified method to produce nanoporous silicon-based films
JP2004161601A (ja) 低誘電率材料を調製するための組成物
EP1090967A3 (en) Composition for film formation, method of film formation, and insulating film
JPH1174257A5 (enExample)
WO2004040635A1 (ja) 低誘電率非晶質シリカ系被膜の形成方法および該方法より得られる低誘電率非晶質シリカ系被膜
CN101048857A (zh) 用作金属间电介质的低k和超低k有机硅酸盐膜的疏水性的恢复
JP2005347636A5 (enExample)
TW200847442A (en) Semiconductor device and method of manufacturing the semiconductor device
EP1088868A3 (en) Composition for film formation, method of film formation, and insulating film
WO2007143025A2 (en) Porous inorganic solids for use as low dielectric constant materials
KR20070043849A (ko) 반도체 소자 및 그 제조방법
JP4082626B2 (ja) 層間絶縁膜形成用材料及び層間絶縁膜
JPH10194873A (ja) 窒化珪素薄膜の形成方法
KR950021138A (ko) 반도체 장치의 제조 방법
JP2001310940A (ja) ポリ(アミノ有機官能基ジシロキサン)
JP2001294447A5 (enExample)
JP2004536924A (ja) シロキサン樹脂
US6140221A (en) Method for forming vias through porous dielectric material and devices formed thereby
JPS584816B2 (ja) 半導体素子とその製法
JPH11105185A (ja) 低誘電率シリカ質膜
JPH09298241A (ja) 半導体装置及びその製造方法