JP4082626B2 - 層間絶縁膜形成用材料及び層間絶縁膜 - Google Patents

層間絶縁膜形成用材料及び層間絶縁膜 Download PDF

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Publication number
JP4082626B2
JP4082626B2 JP30794396A JP30794396A JP4082626B2 JP 4082626 B2 JP4082626 B2 JP 4082626B2 JP 30794396 A JP30794396 A JP 30794396A JP 30794396 A JP30794396 A JP 30794396A JP 4082626 B2 JP4082626 B2 JP 4082626B2
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Japan
Prior art keywords
interlayer insulating
insulating film
bis
benzene
sog
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Expired - Fee Related
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JP30794396A
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English (en)
Japanese (ja)
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JPH10150033A (ja
JPH10150033A5 (enExample
Inventor
信雄 青井
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP30794396A priority Critical patent/JP4082626B2/ja
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Publication of JPH10150033A5 publication Critical patent/JPH10150033A5/ja
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  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Insulating Materials (AREA)
JP30794396A 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜 Expired - Fee Related JP4082626B2 (ja)

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JP30794396A JP4082626B2 (ja) 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜

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Application Number Priority Date Filing Date Title
JP30794396A JP4082626B2 (ja) 1996-11-19 1996-11-19 層間絶縁膜形成用材料及び層間絶縁膜

Publications (3)

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JPH10150033A JPH10150033A (ja) 1998-06-02
JPH10150033A5 JPH10150033A5 (enExample) 2004-10-21
JP4082626B2 true JP4082626B2 (ja) 2008-04-30

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6350704B1 (en) 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6368535B1 (en) * 1999-08-06 2002-04-09 Dow Corning Corporation Condensation reaction curable silsesquioxane resin composition and methods for the synthesis and cure thereof
US6414377B1 (en) * 1999-08-10 2002-07-02 International Business Machines Corporation Low k dielectric materials with inherent copper ion migration barrier
JP3795333B2 (ja) 2000-03-30 2006-07-12 東京応化工業株式会社 反射防止膜形成用組成物
JP4572444B2 (ja) * 2000-05-22 2010-11-04 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
US6577802B1 (en) * 2000-07-13 2003-06-10 Corning Incorporated Application of silane-enhanced adhesion promoters for optical fibers and fiber ribbons
JP4495464B2 (ja) * 2002-01-17 2010-07-07 シレクス オサケユキチュア 集積回路の製造方法
AU2003267629A1 (en) 2002-09-19 2004-04-08 Optitune Public Limited Company Substrate based component packaging and assembly
JP4602700B2 (ja) * 2004-06-03 2010-12-22 東京応化工業株式会社 シリカ系被膜形成用塗布液
US9051491B2 (en) * 2006-06-13 2015-06-09 Braggone Oy Carbosilane polymer compositions for anti-reflective coatings
WO2008096656A1 (ja) * 2007-02-07 2008-08-14 Jsr Corporation ケイ素含有ポリマーおよびその合成方法、膜形成用組成物、ならびにシリカ系膜およびその形成方法
JP5245474B2 (ja) * 2008-03-14 2013-07-24 信越化学工業株式会社 スクリーン印刷用樹脂組成物
JP5625301B2 (ja) * 2009-09-30 2014-11-19 Jsr株式会社 シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法

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