JPH10149693A5 - - Google Patents

Info

Publication number
JPH10149693A5
JPH10149693A5 JP1997251096A JP25109697A JPH10149693A5 JP H10149693 A5 JPH10149693 A5 JP H10149693A5 JP 1997251096 A JP1997251096 A JP 1997251096A JP 25109697 A JP25109697 A JP 25109697A JP H10149693 A5 JPH10149693 A5 JP H10149693A5
Authority
JP
Japan
Prior art keywords
transistor
node
gate
circuit
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997251096A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10149693A (ja
JP4519953B2 (ja
Filing date
Publication date
Priority claimed from IT96RM000626A external-priority patent/IT1285894B1/it
Application filed filed Critical
Publication of JPH10149693A publication Critical patent/JPH10149693A/ja
Publication of JPH10149693A5 publication Critical patent/JPH10149693A5/ja
Application granted granted Critical
Publication of JP4519953B2 publication Critical patent/JP4519953B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP25109697A 1996-09-13 1997-09-16 メモリ回路用の電圧トランスレータ Expired - Lifetime JP4519953B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT96RM000626A IT1285894B1 (it) 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.
IT96A000626 1996-09-13

Publications (3)

Publication Number Publication Date
JPH10149693A JPH10149693A (ja) 1998-06-02
JPH10149693A5 true JPH10149693A5 (cg-RX-API-DMAC7.html) 2005-07-07
JP4519953B2 JP4519953B2 (ja) 2010-08-04

Family

ID=11404419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25109697A Expired - Lifetime JP4519953B2 (ja) 1996-09-13 1997-09-16 メモリ回路用の電圧トランスレータ

Country Status (6)

Country Link
EP (1) EP0829881B1 (cg-RX-API-DMAC7.html)
JP (1) JP4519953B2 (cg-RX-API-DMAC7.html)
KR (1) KR100497688B1 (cg-RX-API-DMAC7.html)
DE (1) DE69720126T2 (cg-RX-API-DMAC7.html)
IT (1) IT1285894B1 (cg-RX-API-DMAC7.html)
SG (1) SG67418A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3466593B2 (ja) * 2001-09-20 2003-11-10 沖電気工業株式会社 電圧トランスレータ回路
JP3410084B2 (ja) 2001-09-20 2003-05-26 沖電気工業株式会社 電圧トランスレータ
JP3532181B2 (ja) 2001-11-21 2004-05-31 沖電気工業株式会社 電圧トランスレータ
WO2010076833A1 (en) * 2008-12-31 2010-07-08 Fabio Pellizzer Word-line driver including pull-up resistor and pull-down transistor
GB2471572B (en) * 2009-07-02 2015-04-22 Advanced Risc Mach Ltd Voltage level shifter
US8908439B2 (en) * 2012-09-07 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adaptive word-line boost driver

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823318A (en) * 1988-09-02 1989-04-18 Texas Instruments Incorporated Driving circuitry for EEPROM memory cell
DE69126234T2 (de) * 1990-04-23 1997-11-06 Texas Instruments Inc Wortleitungstreiberschaltung für nichtflüchtiges Speicherzellenarray
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
JPH07235190A (ja) * 1994-02-24 1995-09-05 Sony Corp 半導体不揮発性記憶装置
KR0170293B1 (ko) * 1995-12-29 1999-03-30 김광호 이.이.피.롬 장치

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