SG67418A1 - A row drive circuit for low voltage flash eeprom memories - Google Patents

A row drive circuit for low voltage flash eeprom memories

Info

Publication number
SG67418A1
SG67418A1 SG1997003355A SG1997003355A SG67418A1 SG 67418 A1 SG67418 A1 SG 67418A1 SG 1997003355 A SG1997003355 A SG 1997003355A SG 1997003355 A SG1997003355 A SG 1997003355A SG 67418 A1 SG67418 A1 SG 67418A1
Authority
SG
Singapore
Prior art keywords
drive circuit
low voltage
flash eeprom
row drive
eeprom memories
Prior art date
Application number
SG1997003355A
Other languages
English (en)
Inventor
Stefano Menichelli
Tommaso Vali
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of SG67418A1 publication Critical patent/SG67418A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
SG1997003355A 1996-09-13 1997-09-11 A row drive circuit for low voltage flash eeprom memories SG67418A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT96RM000626A IT1285894B1 (it) 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.

Publications (1)

Publication Number Publication Date
SG67418A1 true SG67418A1 (en) 1999-09-21

Family

ID=11404419

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997003355A SG67418A1 (en) 1996-09-13 1997-09-11 A row drive circuit for low voltage flash eeprom memories

Country Status (6)

Country Link
EP (1) EP0829881B1 (cg-RX-API-DMAC7.html)
JP (1) JP4519953B2 (cg-RX-API-DMAC7.html)
KR (1) KR100497688B1 (cg-RX-API-DMAC7.html)
DE (1) DE69720126T2 (cg-RX-API-DMAC7.html)
IT (1) IT1285894B1 (cg-RX-API-DMAC7.html)
SG (1) SG67418A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3466593B2 (ja) * 2001-09-20 2003-11-10 沖電気工業株式会社 電圧トランスレータ回路
JP3410084B2 (ja) 2001-09-20 2003-05-26 沖電気工業株式会社 電圧トランスレータ
JP3532181B2 (ja) 2001-11-21 2004-05-31 沖電気工業株式会社 電圧トランスレータ
WO2010076833A1 (en) * 2008-12-31 2010-07-08 Fabio Pellizzer Word-line driver including pull-up resistor and pull-down transistor
GB2471572B (en) * 2009-07-02 2015-04-22 Advanced Risc Mach Ltd Voltage level shifter
US8908439B2 (en) * 2012-09-07 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adaptive word-line boost driver

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823318A (en) * 1988-09-02 1989-04-18 Texas Instruments Incorporated Driving circuitry for EEPROM memory cell
DE69126234T2 (de) * 1990-04-23 1997-11-06 Texas Instruments Inc Wortleitungstreiberschaltung für nichtflüchtiges Speicherzellenarray
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
JPH07235190A (ja) * 1994-02-24 1995-09-05 Sony Corp 半導体不揮発性記憶装置
KR0170293B1 (ko) * 1995-12-29 1999-03-30 김광호 이.이.피.롬 장치

Also Published As

Publication number Publication date
DE69720126D1 (de) 2003-04-30
IT1285894B1 (it) 1998-06-24
EP0829881A2 (en) 1998-03-18
JPH10149693A (ja) 1998-06-02
EP0829881A3 (en) 1999-07-07
ITRM960626A1 (it) 1998-03-13
KR100497688B1 (ko) 2005-09-08
EP0829881B1 (en) 2003-03-26
JP4519953B2 (ja) 2010-08-04
KR19980024604A (ko) 1998-07-06
DE69720126T2 (de) 2003-12-04

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