EP1494282A1 - Flash memory array - Google Patents
Flash memory arrayInfo
- Publication number
- EP1494282A1 EP1494282A1 EP04077413.5A EP04077413A EP1494282A1 EP 1494282 A1 EP1494282 A1 EP 1494282A1 EP 04077413 A EP04077413 A EP 04077413A EP 1494282 A1 EP1494282 A1 EP 1494282A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- flash memory
- memory array
- array
- flash
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59797 | 1987-06-09 | ||
US5968397P | 1997-09-19 | 1997-09-19 | |
US5934997P | 1997-09-19 | 1997-09-19 | |
US59683 | 1997-09-19 | ||
US59349 | 1997-09-19 | ||
US5979797P | 1997-09-23 | 1997-09-23 | |
US09/153,843 US6134144A (en) | 1997-09-19 | 1998-09-15 | Flash memory array |
EP98948282A EP1016085A4 (en) | 1997-09-19 | 1998-09-16 | Flash memory array |
US153843 | 2002-05-21 |
Related Parent Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98948282A Division EP1016085A4 (en) | 1997-09-19 | 1998-09-16 | Flash memory array |
EP98948282.3 Division | 1998-09-16 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1494282A1 true EP1494282A1 (en) | 2005-01-05 |
EP1531493A2 EP1531493A2 (en) | 2005-05-18 |
EP1531493A3 EP1531493A3 (en) | 2005-09-28 |
Family
ID=27490054
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04077413A Withdrawn EP1531493A3 (en) | 1997-09-19 | 1998-09-16 | Flash memory array |
EP98948282A Withdrawn EP1016085A4 (en) | 1997-09-19 | 1998-09-16 | Flash memory array |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP98948282A Withdrawn EP1016085A4 (en) | 1997-09-19 | 1998-09-16 | Flash memory array |
Country Status (6)
Country | Link |
---|---|
US (1) | US6134144A (en) |
EP (2) | EP1531493A3 (en) |
JP (1) | JP2003526192A (en) |
KR (3) | KR20060012665A (en) |
CN (6) | CN1560871A (en) |
WO (1) | WO1999016077A1 (en) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2001052326A1 (en) * | 1999-12-21 | 2001-07-19 | Koninklijke Philips Electronics N.V. | Virtual-ground, split-gate flash memory cell arrangements |
US6396728B1 (en) | 2000-07-28 | 2002-05-28 | Micron Technology, Inc. | Array organization for high-performance memory devices |
TW546840B (en) | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
US6584018B2 (en) | 2001-10-05 | 2003-06-24 | Mosel Vitelic, Inc. | Nonvolatile memory structures and access methods |
US6756633B2 (en) * | 2001-12-27 | 2004-06-29 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges |
CN1319071C (en) * | 2002-08-07 | 2007-05-30 | 飞虹积体电路股份有限公司 | System and method for simulating EEPROM with flash memory |
US6859393B1 (en) * | 2002-10-04 | 2005-02-22 | Fasl, Llc | Ground structure for page read and page write for flash memory |
US6995060B2 (en) * | 2003-03-19 | 2006-02-07 | Promos Technologies Inc. | Fabrication of integrated circuit elements in structures with protruding features |
US6962852B2 (en) | 2003-03-19 | 2005-11-08 | Promos Technologies Inc. | Nonvolatile memories and methods of fabrication |
US6962851B2 (en) * | 2003-03-19 | 2005-11-08 | Promos Technologies, Inc. | Nonvolatile memories and methods of fabrication |
US6893921B2 (en) * | 2003-04-10 | 2005-05-17 | Mosel Vitelic, Inc. | Nonvolatile memories with a floating gate having an upward protrusion |
US6846712B2 (en) * | 2003-05-16 | 2005-01-25 | Promos Technologies Inc. | Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates |
US7214585B2 (en) * | 2003-05-16 | 2007-05-08 | Promos Technologies Inc. | Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges |
US6902974B2 (en) * | 2003-05-16 | 2005-06-07 | Promos Technologies Inc. | Fabrication of conductive gates for nonvolatile memories from layers with protruding portions |
US6974739B2 (en) * | 2003-05-16 | 2005-12-13 | Promos Technologies Inc. | Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit |
TWI221670B (en) * | 2003-05-28 | 2004-10-01 | Winbond Electronics Corp | Stack-gate flash memory array |
US7169667B2 (en) * | 2003-07-30 | 2007-01-30 | Promos Technologies Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate |
US6885044B2 (en) * | 2003-07-30 | 2005-04-26 | Promos Technologies, Inc. | Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates |
US7052947B2 (en) * | 2003-07-30 | 2006-05-30 | Promos Technologies Inc. | Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates |
US7101757B2 (en) * | 2003-07-30 | 2006-09-05 | Promos Technologies, Inc. | Nonvolatile memory cells with buried channel transistors |
US6951782B2 (en) * | 2003-07-30 | 2005-10-04 | Promos Technologies, Inc. | Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions |
US7060565B2 (en) * | 2003-07-30 | 2006-06-13 | Promos Technologies Inc. | Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates |
US7238575B2 (en) * | 2004-03-10 | 2007-07-03 | Promos Technologies, Inc. | Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures |
US7148104B2 (en) * | 2004-03-10 | 2006-12-12 | Promos Technologies Inc. | Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures |
US9123572B2 (en) | 2004-05-06 | 2015-09-01 | Sidense Corporation | Anti-fuse memory cell |
US8767433B2 (en) | 2004-05-06 | 2014-07-01 | Sidense Corp. | Methods for testing unprogrammed OTP memory |
US7755162B2 (en) | 2004-05-06 | 2010-07-13 | Sidense Corp. | Anti-fuse memory cell |
US7511982B2 (en) * | 2004-05-06 | 2009-03-31 | Sidense Corp. | High speed OTP sensing scheme |
KR101144218B1 (en) | 2004-05-06 | 2012-05-10 | 싸이던스 코포레이션 | Split-channel antifuse array architecture |
US8735297B2 (en) | 2004-05-06 | 2014-05-27 | Sidense Corporation | Reverse optical proximity correction method |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
JP2009301703A (en) * | 2009-09-24 | 2009-12-24 | Renesas Technology Corp | Semiconductor device |
US8811093B2 (en) | 2012-03-13 | 2014-08-19 | Silicon Storage Technology, Inc. | Non-volatile memory device and a method of operating same |
KR20150049908A (en) * | 2013-10-31 | 2015-05-08 | 에스케이하이닉스 주식회사 | Semiconductor memory device and erasing method thereof |
EP3182415B1 (en) * | 2014-08-14 | 2022-10-05 | Renesas Electronics Corporation | Semiconductor device |
CN104183273B (en) * | 2014-08-27 | 2020-06-09 | 上海华力微电子有限公司 | Programming method of flash memory device |
FR3029000B1 (en) | 2014-11-24 | 2017-12-22 | Stmicroelectronics Rousset | COMPACT NON-VOLATILE MEMORY DEVICE |
US9830998B2 (en) | 2015-05-19 | 2017-11-28 | Sandisk Technologies Llc | Stress patterns to detect shorts in three dimensional non-volatile memory |
KR20170068163A (en) | 2015-12-09 | 2017-06-19 | 에스케이하이닉스 주식회사 | Semiconductor memory device |
US10431265B2 (en) * | 2017-03-23 | 2019-10-01 | Silicon Storage Technology, Inc. | Address fault detection in a flash memory system |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3177270D1 (en) * | 1980-10-15 | 1992-02-27 | Toshiba Kawasaki Kk | SEMICONDUCTOR MEMORY WITH DATA PROGRAMMING TIME. |
US4673829A (en) * | 1982-02-08 | 1987-06-16 | Seeq Technology, Inc. | Charge pump for providing programming voltage to the word lines in a semiconductor memory array |
JPS60206164A (en) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | Semiconductor memory device |
JPS63153799A (en) * | 1986-08-08 | 1988-06-27 | Nec Corp | Semiconductor memory |
JPH0814991B2 (en) * | 1988-01-28 | 1996-02-14 | 株式会社東芝 | Electrically erasable nonvolatile semiconductor memory device |
JPH07105160B2 (en) * | 1989-05-20 | 1995-11-13 | 東芝マイクロエレクトロニクス株式会社 | Semiconductor memory device |
JP3158420B2 (en) * | 1990-08-30 | 2001-04-23 | 日本電気株式会社 | Temperature detection circuit and semiconductor device provided with temperature detection circuit |
US5280446A (en) * | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
US5289423A (en) * | 1990-11-16 | 1994-02-22 | Sgs-Thomson Microelectronics S.R.L. | Bank erasable, flash-EPROM memory |
US5345418A (en) * | 1991-01-24 | 1994-09-06 | Nexcom Technology, Inc. | Single transistor EEPROM architecture |
JP3170038B2 (en) * | 1992-05-19 | 2001-05-28 | 株式会社東芝 | Nonvolatile semiconductor memory device |
US5282170A (en) * | 1992-10-22 | 1994-01-25 | Advanced Micro Devices, Inc. | Negative power supply |
US5335200A (en) * | 1993-01-05 | 1994-08-02 | Texas Instruments Incorporated | High voltage negative charge pump with low voltage CMOS transistors |
DE69433320T2 (en) * | 1993-07-29 | 2004-09-16 | Atmel Corp., San Jose | REMOTE CONTROLLED REPROGRAMMABLE PROGRAM MEMORY FOR A MICRO CONTROLLER |
US5406517A (en) * | 1993-08-23 | 1995-04-11 | Advanced Micro Devices, Inc. | Distributed negative gate power supply |
US5627838A (en) * | 1993-09-30 | 1997-05-06 | Macronix International Co., Ltd. | Automatic test circuitry with non-volatile status write |
KR950015768A (en) * | 1993-11-17 | 1995-06-17 | 김광호 | Wiring short detection circuit of nonvolatile semiconductor memory device and method thereof |
JP3406077B2 (en) * | 1994-08-26 | 2003-05-12 | 三菱電機株式会社 | Nonvolatile semiconductor memory device |
KR960039006A (en) * | 1995-04-26 | 1996-11-21 | 김광호 | Nonvolatile semiconductor memory device connectable to DRAM bus |
JP3878681B2 (en) * | 1995-06-15 | 2007-02-07 | 株式会社ルネサステクノロジ | Nonvolatile semiconductor memory device |
US5844839A (en) * | 1995-07-19 | 1998-12-01 | Texas Instruments Incorporated | Programmable and convertible non-volatile memory array |
DE69515669T2 (en) * | 1995-10-31 | 2000-07-27 | St Microelectronics Srl | Negative charge pump circuit for electrically erasable semiconductor memory device |
US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
US5668757A (en) * | 1996-03-18 | 1997-09-16 | Jeng; Ching-Shi | Scalable flash eeprom memory cell and array |
US5740109A (en) * | 1996-08-23 | 1998-04-14 | Motorola, Inc. | Non-linear charge pump |
-
1998
- 1998-09-15 US US09/153,843 patent/US6134144A/en not_active Expired - Lifetime
- 1998-09-16 CN CNA2004100040594A patent/CN1560871A/en active Pending
- 1998-09-16 EP EP04077413A patent/EP1531493A3/en not_active Withdrawn
- 1998-09-16 CN CNA2004100040626A patent/CN1560872A/en active Pending
- 1998-09-16 CN CNA2004100033919A patent/CN1560870A/en active Pending
- 1998-09-16 KR KR1020057025482A patent/KR20060012665A/en not_active Application Discontinuation
- 1998-09-16 CN CNA2004100040630A patent/CN1560873A/en active Pending
- 1998-09-16 JP JP2000513290A patent/JP2003526192A/en not_active Withdrawn
- 1998-09-16 WO PCT/US1998/019326 patent/WO1999016077A1/en active IP Right Grant
- 1998-09-16 KR KR1020057025484A patent/KR20060012666A/en not_active Application Discontinuation
- 1998-09-16 KR KR1020007002947A patent/KR100616758B1/en not_active IP Right Cessation
- 1998-09-16 CN CNA2004100040698A patent/CN1560874A/en active Pending
- 1998-09-16 EP EP98948282A patent/EP1016085A4/en not_active Withdrawn
- 1998-09-16 CN CNB988113600A patent/CN1143313C/en not_active Expired - Fee Related
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