EP1494282A1 - Ensemble memoire flash - Google Patents

Ensemble memoire flash

Info

Publication number
EP1494282A1
EP1494282A1 EP04077413.5A EP04077413A EP1494282A1 EP 1494282 A1 EP1494282 A1 EP 1494282A1 EP 04077413 A EP04077413 A EP 04077413A EP 1494282 A1 EP1494282 A1 EP 1494282A1
Authority
EP
European Patent Office
Prior art keywords
flash memory
memory array
array
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04077413.5A
Other languages
German (de)
English (en)
Other versions
EP1531493A2 (fr
EP1531493A3 (fr
Inventor
Tien L. Lin
Ben Yau Sheen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Integrated Memory Technologies Inc
Original Assignee
Integrated Memory Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/153,843 external-priority patent/US6134144A/en
Application filed by Integrated Memory Technologies Inc filed Critical Integrated Memory Technologies Inc
Publication of EP1494282A1 publication Critical patent/EP1494282A1/fr
Publication of EP1531493A2 publication Critical patent/EP1531493A2/fr
Publication of EP1531493A3 publication Critical patent/EP1531493A3/fr
Withdrawn legal-status Critical Current

Links

EP04077413A 1997-09-19 1998-09-16 Ensemble memoire flash Withdrawn EP1531493A3 (fr)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US59797 1987-06-09
US5934997P 1997-09-19 1997-09-19
US5968397P 1997-09-19 1997-09-19
US59349 1997-09-19
US59683 1997-09-19
US5979797P 1997-09-23 1997-09-23
US09/153,843 US6134144A (en) 1997-09-19 1998-09-15 Flash memory array
EP98948282A EP1016085A4 (fr) 1997-09-19 1998-09-16 Ensemble memoire flash
US153843 2002-05-21

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP98948282.3 Division 1998-09-16
EP98948282A Division EP1016085A4 (fr) 1997-09-19 1998-09-16 Ensemble memoire flash

Publications (3)

Publication Number Publication Date
EP1494282A1 true EP1494282A1 (fr) 2005-01-05
EP1531493A2 EP1531493A2 (fr) 2005-05-18
EP1531493A3 EP1531493A3 (fr) 2005-09-28

Family

ID=27490054

Family Applications (2)

Application Number Title Priority Date Filing Date
EP98948282A Withdrawn EP1016085A4 (fr) 1997-09-19 1998-09-16 Ensemble memoire flash
EP04077413A Withdrawn EP1531493A3 (fr) 1997-09-19 1998-09-16 Ensemble memoire flash

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP98948282A Withdrawn EP1016085A4 (fr) 1997-09-19 1998-09-16 Ensemble memoire flash

Country Status (6)

Country Link
US (1) US6134144A (fr)
EP (2) EP1016085A4 (fr)
JP (1) JP2003526192A (fr)
KR (3) KR20060012666A (fr)
CN (6) CN1560873A (fr)
WO (1) WO1999016077A1 (fr)

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US6756633B2 (en) * 2001-12-27 2004-06-29 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges
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US6893921B2 (en) * 2003-04-10 2005-05-17 Mosel Vitelic, Inc. Nonvolatile memories with a floating gate having an upward protrusion
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US6974739B2 (en) * 2003-05-16 2005-12-13 Promos Technologies Inc. Fabrication of dielectric on a gate surface to insulate the gate from another element of an integrated circuit
US6846712B2 (en) * 2003-05-16 2005-01-25 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
TWI221670B (en) * 2003-05-28 2004-10-01 Winbond Electronics Corp Stack-gate flash memory array
US6951782B2 (en) * 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
US7169667B2 (en) * 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US6885044B2 (en) * 2003-07-30 2005-04-26 Promos Technologies, Inc. Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
US7148104B2 (en) * 2004-03-10 2006-12-12 Promos Technologies Inc. Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
US7238575B2 (en) * 2004-03-10 2007-07-03 Promos Technologies, Inc. Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures
US7755162B2 (en) 2004-05-06 2010-07-13 Sidense Corp. Anti-fuse memory cell
US8735297B2 (en) 2004-05-06 2014-05-27 Sidense Corporation Reverse optical proximity correction method
CA2520140C (fr) * 2004-05-06 2007-05-15 Sidense Corp. Architecture de reseau anti-fusion a canal dedouble
US7511982B2 (en) * 2004-05-06 2009-03-31 Sidense Corp. High speed OTP sensing scheme
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
US8767433B2 (en) 2004-05-06 2014-07-01 Sidense Corp. Methods for testing unprogrammed OTP memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP2009301703A (ja) * 2009-09-24 2009-12-24 Renesas Technology Corp 半導体装置
US8811093B2 (en) * 2012-03-13 2014-08-19 Silicon Storage Technology, Inc. Non-volatile memory device and a method of operating same
KR20150049908A (ko) * 2013-10-31 2015-05-08 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 소거 방법
US10079062B2 (en) * 2014-08-14 2018-09-18 Renesas Electronics Corporation Semiconductor device
CN104183273B (zh) * 2014-08-27 2020-06-09 上海华力微电子有限公司 闪存器件的编程方法
FR3029000B1 (fr) 2014-11-24 2017-12-22 Stmicroelectronics Rousset Dispositif de memoire non volatile compact
US9830998B2 (en) 2015-05-19 2017-11-28 Sandisk Technologies Llc Stress patterns to detect shorts in three dimensional non-volatile memory
KR20170068163A (ko) 2015-12-09 2017-06-19 에스케이하이닉스 주식회사 반도체 메모리 장치
US10431265B2 (en) * 2017-03-23 2019-10-01 Silicon Storage Technology, Inc. Address fault detection in a flash memory system

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EP0772282B1 (fr) * 1995-10-31 2000-03-15 STMicroelectronics S.r.l. Circuit pompe de charge négative pour dispositifs de mémoire semi-conductrice effaçable électriquement
US5687118A (en) * 1995-11-14 1997-11-11 Programmable Microelectronics Corporation PMOS memory cell with hot electron injection programming and tunnelling erasing
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