JPH1012889A - 半導体薄膜および半導体装置 - Google Patents

半導体薄膜および半導体装置

Info

Publication number
JPH1012889A
JPH1012889A JP8178509A JP17850996A JPH1012889A JP H1012889 A JPH1012889 A JP H1012889A JP 8178509 A JP8178509 A JP 8178509A JP 17850996 A JP17850996 A JP 17850996A JP H1012889 A JPH1012889 A JP H1012889A
Authority
JP
Japan
Prior art keywords
film
silicon film
region
thin film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8178509A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1012889A5 (OSRAM
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP8178509A priority Critical patent/JPH1012889A/ja
Priority to US08/878,505 priority patent/US6207969B1/en
Publication of JPH1012889A publication Critical patent/JPH1012889A/ja
Publication of JPH1012889A5 publication Critical patent/JPH1012889A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP8178509A 1996-06-18 1996-06-18 半導体薄膜および半導体装置 Withdrawn JPH1012889A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8178509A JPH1012889A (ja) 1996-06-18 1996-06-18 半導体薄膜および半導体装置
US08/878,505 US6207969B1 (en) 1996-06-18 1997-06-18 Semiconductor thin film and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8178509A JPH1012889A (ja) 1996-06-18 1996-06-18 半導体薄膜および半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004093039A Division JP2004247747A (ja) 2004-03-26 2004-03-26 半導体装置、半導体装置の作製方法、液晶表示装置、エレクトロルミネッセンス表示装置、エレクトロクロミックス表示装置、ｔｖ、パーソナルコンピュータ、カーナビゲーションシステム、カメラ、ビデオカメラ

Publications (2)

Publication Number Publication Date
JPH1012889A true JPH1012889A (ja) 1998-01-16
JPH1012889A5 JPH1012889A5 (OSRAM) 2004-07-08

Family

ID=16049721

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8178509A Withdrawn JPH1012889A (ja) 1996-06-18 1996-06-18 半導体薄膜および半導体装置

Country Status (2)

Country Link
US (1) US6207969B1 (OSRAM)
JP (1) JPH1012889A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7199024B2 (en) 1998-06-22 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7473592B2 (en) 1998-09-04 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
JP2024527658A (ja) * 2022-06-27 2024-07-26 綿陽恵科光電科技有限公司 表示駆動回路及び表示装置

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JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
TW383502B (en) 1995-06-01 2000-03-01 Seniconductor Energy Lab Kk Method of manufacturing semiconductor device
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US6478263B1 (en) * 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6011275A (en) 1996-12-30 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
TW507258B (en) 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
US7633471B2 (en) * 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US6825820B2 (en) * 2000-08-10 2004-11-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) * 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
JP3890270B2 (ja) * 2002-07-19 2007-03-07 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタの製造方法
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
CN102709478B (zh) 2003-03-26 2016-08-17 株式会社半导体能源研究所 发光装置
TW595002B (en) * 2003-04-16 2004-06-21 Au Optronics Corp Fabricating method of low temperature poly-silicon film and low temperature poly-silicon thin film transistor
US7122969B2 (en) * 2003-06-18 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Element substrate and light emitting device
US8552933B2 (en) * 2003-06-30 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and driving method of the same
US7683860B2 (en) * 2003-12-02 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof, and element substrate
US7446742B2 (en) 2004-01-30 2008-11-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100731752B1 (ko) * 2005-09-07 2007-06-22 삼성에스디아이 주식회사 박막트랜지스터
KR101921619B1 (ko) 2009-12-28 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8748886B2 (en) * 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN103053026A (zh) * 2011-08-10 2013-04-17 松下电器产业株式会社 薄膜晶体管器件以及薄膜晶体管器件的制造方法
SG10201610711UA (en) 2012-04-13 2017-02-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US10304859B2 (en) 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
RU2656241C1 (ru) * 2014-05-29 2018-06-04 Кабусики Кайся Тойота Дзидосокки Кремниевый материал и отрицательный электрод вторичной батареи
EP3150554B1 (en) 2014-05-29 2018-07-11 Kabushiki Kaisha Toyota Jidoshokki Negative electrode of a secondary battery composed of a silicon material
JP6288257B2 (ja) 2014-05-29 2018-03-07 株式会社豊田自動織機 ナノシリコン材料とその製造方法及び二次電池の負極

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US5521107A (en) * 1991-02-16 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming a field-effect transistor including anodic oxidation of the gate
JPH05182923A (ja) * 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
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US5456763A (en) * 1994-03-29 1995-10-10 The Regents Of The University Of California Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7199024B2 (en) 1998-06-22 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7473592B2 (en) 1998-09-04 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7473971B2 (en) 1998-09-04 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7476576B2 (en) 1998-09-04 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7638805B2 (en) 1998-09-04 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7642598B2 (en) 1998-09-04 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US9070604B2 (en) 1998-09-04 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
JP2024527658A (ja) * 2022-06-27 2024-07-26 綿陽恵科光電科技有限公司 表示駆動回路及び表示装置

Also Published As

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