JPH10107018A - 半導体ウェーハの熱処理装置 - Google Patents

半導体ウェーハの熱処理装置

Info

Publication number
JPH10107018A
JPH10107018A JP9711097A JP9711097A JPH10107018A JP H10107018 A JPH10107018 A JP H10107018A JP 9711097 A JP9711097 A JP 9711097A JP 9711097 A JP9711097 A JP 9711097A JP H10107018 A JPH10107018 A JP H10107018A
Authority
JP
Japan
Prior art keywords
heat treatment
gas
wafer
treatment apparatus
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9711097A
Other languages
English (en)
Japanese (ja)
Inventor
Seong-Hun Kang
聲 勳 姜
Young-Lark Koh
永 洛 高
Teikei Ri
貞 圭 李
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH10107018A publication Critical patent/JPH10107018A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Furnace Details (AREA)
JP9711097A 1996-09-23 1997-04-15 半導体ウェーハの熱処理装置 Pending JPH10107018A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1996-41741 1996-09-23
KR1019960041741A KR100203780B1 (ko) 1996-09-23 1996-09-23 반도체 웨이퍼 열처리 장치

Publications (1)

Publication Number Publication Date
JPH10107018A true JPH10107018A (ja) 1998-04-24

Family

ID=19474925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9711097A Pending JPH10107018A (ja) 1996-09-23 1997-04-15 半導体ウェーハの熱処理装置

Country Status (4)

Country Link
JP (1) JPH10107018A (de)
KR (1) KR100203780B1 (de)
DE (1) DE19716707A1 (de)
GB (1) GB2317497A (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289546A (ja) * 2001-03-27 2002-10-04 Denso Corp 炭化珪素半導体製造装置及びそれを用いた炭化珪素半導体の製造方法
US6626236B1 (en) * 1999-03-24 2003-09-30 Komatsu Ltd. Substrate temperature control plate and substrate temperature control apparatus comprising same
WO2003107404A1 (ja) * 2002-06-13 2003-12-24 株式会社日鉱マテリアルズ 気相成長装置および気相成長方法
WO2003107403A1 (ja) * 2002-06-13 2003-12-24 株式会社日鉱マテリアルズ 気相成長装置
KR100426274B1 (ko) * 2001-08-02 2004-04-08 피에스케이 주식회사 램프가열을 이용한 반도체 웨이퍼 애싱장치 및 방법
CN102082072A (zh) * 2009-11-26 2011-06-01 Tes股份有限公司 气体喷射装置及具备该气体喷射装置的处理室
JP2012204597A (ja) * 2011-03-25 2012-10-22 Core Technology Inc 多段式加熱装置
JP2019216287A (ja) * 2019-10-01 2019-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
KR20200095578A (ko) * 2018-01-26 2020-08-10 가부시키가이샤 스크린 홀딩스 열처리 방법 및 열처리 장치

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1308193C (zh) * 2004-12-17 2007-04-04 上海圣亚照明有限公司第一分公司 一次性增氧饮用水瓶
JP4535499B2 (ja) * 2005-04-19 2010-09-01 東京エレクトロン株式会社 加熱装置、塗布、現像装置及び加熱方法
US7402778B2 (en) * 2005-04-29 2008-07-22 Asm Assembly Automation Ltd. Oven for controlled heating of compounds at varying temperatures
KR100738873B1 (ko) 2006-02-07 2007-07-12 주식회사 에스에프에이 평면디스플레이용 화학 기상 증착장치
KR101289346B1 (ko) * 2006-05-15 2013-07-29 주성엔지니어링(주) 기판 처리 장치
KR101289343B1 (ko) * 2006-05-15 2013-07-29 주성엔지니어링(주) 기판 처리 장치
KR101289344B1 (ko) * 2006-05-15 2013-07-29 주성엔지니어링(주) 기판 처리 장치
KR101588566B1 (ko) * 2008-03-20 2016-01-26 어플라이드 머티어리얼스, 인코포레이티드 롤-성형 표면을 갖는 서셉터 및 이를 제조하기 위한 방법
US20110024049A1 (en) * 2009-07-30 2011-02-03 c/o Lam Research Corporation Light-up prevention in electrostatic chucks
KR101031226B1 (ko) * 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
FR2959757B1 (fr) * 2010-05-04 2012-08-03 Global Technologies Reacteur pyrolytique a chauffage bilateral
FR2959756B1 (fr) * 2010-05-04 2012-08-03 Global Technologies Reacteur pyrolytique a pompage axial
DE102018125150A1 (de) * 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Heizplattform, wärmebahndlungs- und herstellungsverfahren
US11107708B2 (en) 2017-11-14 2021-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Heating platform, thermal treatment and manufacturing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0614216A4 (de) * 1991-11-22 1994-11-30 Tadahiro Ohmi Einrichtung zur erzeugung einer oxid-schicht, einrichtung zur thermischen behandlung, halbleiteranordnung und herstellungsverfahren dafür.
JP3234091B2 (ja) * 1994-03-10 2001-12-04 株式会社日立製作所 表面処理装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6626236B1 (en) * 1999-03-24 2003-09-30 Komatsu Ltd. Substrate temperature control plate and substrate temperature control apparatus comprising same
JP2002289546A (ja) * 2001-03-27 2002-10-04 Denso Corp 炭化珪素半導体製造装置及びそれを用いた炭化珪素半導体の製造方法
KR100426274B1 (ko) * 2001-08-02 2004-04-08 피에스케이 주식회사 램프가열을 이용한 반도체 웨이퍼 애싱장치 및 방법
US7314519B2 (en) 2002-06-13 2008-01-01 Nippon Mining & Metals Co., Ltd. Vapor-phase epitaxial apparatus and vapor phase epitaxial method
WO2003107403A1 (ja) * 2002-06-13 2003-12-24 株式会社日鉱マテリアルズ 気相成長装置
CN1322551C (zh) * 2002-06-13 2007-06-20 日矿金属株式会社 气相生长装置以及气相生长方法
WO2003107404A1 (ja) * 2002-06-13 2003-12-24 株式会社日鉱マテリアルズ 気相成長装置および気相成長方法
US7344597B2 (en) 2002-06-13 2008-03-18 Nippon Mining & Metals Co., Ltd. Vapor-phase growth apparatus
CN102082072A (zh) * 2009-11-26 2011-06-01 Tes股份有限公司 气体喷射装置及具备该气体喷射装置的处理室
JP2012204597A (ja) * 2011-03-25 2012-10-22 Core Technology Inc 多段式加熱装置
KR20200095578A (ko) * 2018-01-26 2020-08-10 가부시키가이샤 스크린 홀딩스 열처리 방법 및 열처리 장치
CN111656489A (zh) * 2018-01-26 2020-09-11 株式会社斯库林集团 热处理方法及热处理装置
US11251057B2 (en) 2018-01-26 2022-02-15 SCREEN Holdings Co., Ltd. Thermal processing method and thermal processing device
JP2019216287A (ja) * 2019-10-01 2019-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

Also Published As

Publication number Publication date
KR100203780B1 (ko) 1999-06-15
GB9710204D0 (en) 1997-07-09
DE19716707A1 (de) 1998-04-02
GB2317497A (en) 1998-03-25
KR19980022560A (ko) 1998-07-06

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