JPH09507723A - 最適化したｅｓｄ保護を備える入力／出力トランジスタ - Google Patents

最適化したｅｓｄ保護を備える入力／出力トランジスタ

Info

Publication number
JPH09507723A
JPH09507723A JP7519171A JP51917195A JPH09507723A JP H09507723 A JPH09507723 A JP H09507723A JP 7519171 A JP7519171 A JP 7519171A JP 51917195 A JP51917195 A JP 51917195A JP H09507723 A JPH09507723 A JP H09507723A
Authority
JP
Japan
Prior art keywords
drain
channel
gate
path
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP7519171A
Other languages
English (en)
Japanese (ja)
Inventor
ランダッゾ，トッド・エイ
ラーセン，ブラッドリー・ジェイ
ゴングワー，ジェフリー・エス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of JPH09507723A publication Critical patent/JPH09507723A/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7519171A 1994-01-12 1995-01-12 最適化したｅｓｄ保護を備える入力／出力トランジスタ Ceased JPH09507723A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18071694A 1994-01-12 1994-01-12
US180,716 1994-01-12
PCT/US1995/000580 WO1995019646A1 (en) 1994-01-12 1995-01-12 Input/output transistors with optimized esd protection

Publications (1)

Publication Number Publication Date
JPH09507723A true JPH09507723A (ja) 1997-08-05

Family

ID=22661485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7519171A Ceased JPH09507723A (ja) 1994-01-12 1995-01-12 最適化したｅｓｄ保護を備える入力／出力トランジスタ

Country Status (8)

Country Link
US (1) US5493142A (enExample)
EP (1) EP0739542B1 (enExample)
JP (1) JPH09507723A (enExample)
KR (1) KR100320354B1 (enExample)
CN (1) CN1047027C (enExample)
DE (1) DE69526569T2 (enExample)
TW (1) TW262584B (enExample)
WO (1) WO1995019646A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150869A (ja) * 1998-11-06 2000-05-30 Seiko Epson Corp Ｍｏｓトランジスタの製造方法およびｍｏｓトランジスタ
JP2007194656A (ja) * 2007-03-16 2007-08-02 Seiko Epson Corp Ｍｏｓトランジスタの製造方法およびｍｏｓトランジスタ
JP2008205200A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 静電放電保護装置、半導体装置及び静電放電保護装置の製造方法
US8466026B2 (en) 2009-08-18 2013-06-18 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2013539048A (ja) * 2010-10-08 2013-10-17 ディーエヌエー エレクトロニクス エルティーディー イオン感応性電界効果トランジスタのための静電気放電保護

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5374565A (en) * 1993-10-22 1994-12-20 United Microelectronics Corporation Method for ESD protection improvement
US5675168A (en) * 1994-04-01 1997-10-07 Matsushita Electric Industrial Co., Ltd. Unsymmetrical MOS device having a gate insulator area offset from the source and drain areas, and ESD protection circuit including such a MOS device
JPH0951078A (ja) * 1995-05-29 1997-02-18 Mitsubishi Electric Corp 半導体記憶装置および半導体装置
KR100402672B1 (ko) * 1995-10-31 2004-06-04 텍사스 인스트루먼츠 인코포레이티드 CMOS/BiCMOS기술에서ESD방지를위한집적화된횡형구조
US5869869A (en) * 1996-01-31 1999-02-09 Lsi Logic Corporation Microelectronic device with thin film electrostatic discharge protection structure
US6071768A (en) * 1996-05-17 2000-06-06 Texas Instruments Incorporated Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
JPH1070266A (ja) * 1996-08-26 1998-03-10 Nec Corp 半導体装置およびその製造方法
US5953601A (en) * 1998-02-17 1999-09-14 Taiwan Semiconductor Manufacturing Company, Ltd. ESD implantation scheme for 0.35 μm 3.3V 70A gate oxide process
US6171891B1 (en) 1998-02-27 2001-01-09 Taiwan Semiconductor Manufacturing Company Method of manufacture of CMOS device using additional implant regions to enhance ESD performance
FR2779574B1 (fr) * 1998-06-03 2003-01-31 Sgs Thomson Microelectronics Procede de fabrication de transistors haute et basse tension
TW399337B (en) * 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
US6100125A (en) * 1998-09-25 2000-08-08 Fairchild Semiconductor Corp. LDD structure for ESD protection and method of fabrication
US6268639B1 (en) 1999-02-11 2001-07-31 Xilinx, Inc. Electrostatic-discharge protection circuit
TW409392B (en) * 1999-05-10 2000-10-21 United Microelectronics Corp Fabrication method of improving the electrostatic discharge ability of the device and increasing the gain of connected bipolar transistor
US6285062B1 (en) * 1999-05-12 2001-09-04 Micron Technology, Inc. Adjustable high-trigger-voltage electrostatic discharge protection device
US6646324B1 (en) * 2000-06-30 2003-11-11 Intel Corporation Method and apparatus for a linearized output driver and terminator
US6444404B1 (en) 2000-08-09 2002-09-03 Taiwan Semiconductor Manufacturing Company Method of fabricating ESD protection device by using the same photolithographic mask for both the ESD implantation and the silicide blocking regions
US6704180B2 (en) 2002-04-25 2004-03-09 Medtronic, Inc. Low input capacitance electrostatic discharge protection circuit utilizing feedback
US8089129B2 (en) * 2002-08-14 2012-01-03 Advanced Analogic Technologies, Inc. Isolated CMOS transistors
US7825488B2 (en) 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
JP2004111746A (ja) * 2002-09-19 2004-04-08 Fujitsu Ltd 半導体装置及びその製造方法
JP3808026B2 (ja) * 2002-10-23 2006-08-09 株式会社ルネサステクノロジ 半導体装置
JP2005109389A (ja) * 2003-10-02 2005-04-21 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7508038B1 (en) 2005-04-29 2009-03-24 Zilog, Inc. ESD protection transistor
US7646063B1 (en) 2005-06-15 2010-01-12 Pmc-Sierra, Inc. Compact CMOS ESD layout techniques with either fully segmented salicide ballasting (FSSB) in the source and/or drain regions
JP4711061B2 (ja) 2005-09-13 2011-06-29 セイコーエプソン株式会社 半導体装置
US7385263B2 (en) * 2006-05-02 2008-06-10 Atmel Corporation Low resistance integrated MOS structure
TWI339886B (en) * 2006-09-14 2011-04-01 Novatek Microelectronics Corp Layout structure of electrostatic discharge protection circuit and production method thereof
KR100976793B1 (ko) * 2007-12-31 2010-08-20 주식회사 동부하이텍 모스 트랜지스터의 제조 방법
US8354710B2 (en) 2008-08-08 2013-01-15 Infineon Technologies Ag Field-effect device and manufacturing method thereof
KR101051684B1 (ko) * 2008-12-02 2011-07-25 매그나칩 반도체 유한회사 정전기 방전 보호소자 및 그 제조방법
CN101807605B (zh) * 2010-02-05 2015-05-06 上海华虹宏力半导体制造有限公司 一种半导体器件及其制造方法
US8536648B2 (en) 2011-02-03 2013-09-17 Infineon Technologies Ag Drain extended field effect transistors and methods of formation thereof
JP5705593B2 (ja) * 2011-03-08 2015-04-22 セイコーインスツル株式会社 半導体装置および半導体装置の製造方法
US8643111B1 (en) * 2012-08-22 2014-02-04 Vanguard International Semiconductor Corporation Electrostatic discharge (ESD) protection device
US9177924B2 (en) 2013-12-18 2015-11-03 Taiwan Semiconductor Manufacturing Company Limited Vertical nanowire transistor for input/output structure
KR102832118B1 (ko) * 2020-03-04 2025-07-08 주식회사 디비하이텍 Esd 보호소자 및 제조방법
US20240154406A1 (en) * 2022-11-08 2024-05-09 Qualcomm Incorporated Symmetric radio frequency (rf) electrostatic discharge (esd) dissipation switch

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
US4692781B2 (en) * 1984-06-06 1998-01-20 Texas Instruments Inc Semiconductor device with electrostatic discharge protection
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
US4855620A (en) * 1987-11-18 1989-08-08 Texas Instruments Incorporated Output buffer with improved ESD protection
JP2698645B2 (ja) * 1988-05-25 1998-01-19 株式会社東芝 Ｍｏｓｆｅｔ
US5248892A (en) * 1989-03-13 1993-09-28 U.S. Philips Corporation Semiconductor device provided with a protection circuit
US5283449A (en) * 1990-08-09 1994-02-01 Nec Corporation Semiconductor integrated circuit device including two types of MOSFETS having source/drain region different in sheet resistance from each other
US5208475A (en) * 1991-01-30 1993-05-04 National Semiconductor Corporation Electrostatic discharge protection device and a method for simultaneously forming MOS devices with both lightly doped and non lightly doped source and drain regions
KR930010124B1 (ko) * 1991-02-27 1993-10-14 삼성전자 주식회사 반도체 트랜지스터의 제조방법 및 그 구조
US5146298A (en) * 1991-08-16 1992-09-08 Eklund Klas H Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150869A (ja) * 1998-11-06 2000-05-30 Seiko Epson Corp Ｍｏｓトランジスタの製造方法およびｍｏｓトランジスタ
JP2008205200A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 静電放電保護装置、半導体装置及び静電放電保護装置の製造方法
US8354723B2 (en) 2007-02-20 2013-01-15 Fujitsu Semiconductor Limited Electro-static discharge protection device, semiconductor device, and method for manufacturing electro-static discharge protection device
US8722522B2 (en) 2007-02-20 2014-05-13 Fujitsu Semiconductor Limited Electro-static discharge protection device, semiconductor device, and method for manufacturing electro-static discharge protection device
JP2007194656A (ja) * 2007-03-16 2007-08-02 Seiko Epson Corp Ｍｏｓトランジスタの製造方法およびｍｏｓトランジスタ
US8466026B2 (en) 2009-08-18 2013-06-18 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
JP2013539048A (ja) * 2010-10-08 2013-10-17 ディーエヌエー エレクトロニクス エルティーディー イオン感応性電界効果トランジスタのための静電気放電保護

Also Published As

Publication number Publication date
CN1047027C (zh) 1999-12-01
EP0739542B1 (en) 2002-05-02
CN1136367A (zh) 1996-11-20
EP0739542A1 (en) 1996-10-30
DE69526569T2 (de) 2002-12-19
EP0739542A4 (en) 1997-04-16
US5493142A (en) 1996-02-20
TW262584B (enExample) 1995-11-11
DE69526569D1 (de) 2002-06-06
KR100320354B1 (ko) 2002-06-24
KR960705364A (ko) 1996-10-09
WO1995019646A1 (en) 1995-07-20

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