JPH08306678A - 半導体装置の製造方法及び半導体装置 - Google Patents
半導体装置の製造方法及び半導体装置Info
- Publication number
- JPH08306678A JPH08306678A JP7109585A JP10958595A JPH08306678A JP H08306678 A JPH08306678 A JP H08306678A JP 7109585 A JP7109585 A JP 7109585A JP 10958595 A JP10958595 A JP 10958595A JP H08306678 A JPH08306678 A JP H08306678A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- silicon substrate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 58
- 239000004065 semiconductor Substances 0.000 title claims description 57
- 238000000034 method Methods 0.000 claims abstract description 133
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 125
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 125
- 239000010703 silicon Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 122
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 83
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 83
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 76
- 230000003647 oxidation Effects 0.000 claims abstract description 67
- 238000002955 isolation Methods 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 336
- 239000010409 thin film Substances 0.000 claims description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 41
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims 1
- 241000293849 Cordylanthus Species 0.000 abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 38
- 230000000694 effects Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 13
- 241000894007 species Species 0.000 description 9
- 238000009826 distribution Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 210000003323 beak Anatomy 0.000 description 1
- -1 bird's beak Chemical compound 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7109585A JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
| TW085105149A TW326099B (en) | 1995-05-08 | 1996-04-30 | Semiconductor device and the process of manufacturing the same |
| PCT/JP1996/001193 WO1996036073A1 (fr) | 1995-05-08 | 1996-05-01 | Dispositif a semi-conducteur et sa fabrication |
| KR1019970707841A KR19990008315A (ko) | 1995-05-08 | 1996-05-01 | 반도체장치 및 그 제조방법 |
| IN824CA1996 IN187708B (it) | 1995-05-08 | 1996-05-06 | |
| MYPI96001700A MY132186A (en) | 1995-05-08 | 1996-05-06 | Semiconductor device and process for producing the same. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7109585A JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08306678A true JPH08306678A (ja) | 1996-11-22 |
Family
ID=14514002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7109585A Pending JPH08306678A (ja) | 1995-05-08 | 1995-05-08 | 半導体装置の製造方法及び半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH08306678A (it) |
| KR (1) | KR19990008315A (it) |
| IN (1) | IN187708B (it) |
| MY (1) | MY132186A (it) |
| TW (1) | TW326099B (it) |
| WO (1) | WO1996036073A1 (it) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51139263A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of selective oxidation of silicon substrate |
| JPS5249771A (en) * | 1975-10-17 | 1977-04-21 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
| JPS5739551A (en) * | 1980-08-21 | 1982-03-04 | Seiko Epson Corp | Manufacture of selectively oxidized mask |
| JPH0628282B2 (ja) * | 1984-09-19 | 1994-04-13 | ソニー株式会社 | 半導体装置の製造方法 |
| JP3403210B2 (ja) * | 1992-02-14 | 2003-05-06 | 富士通株式会社 | 半導体装置の製造方法 |
-
1995
- 1995-05-08 JP JP7109585A patent/JPH08306678A/ja active Pending
-
1996
- 1996-04-30 TW TW085105149A patent/TW326099B/zh active
- 1996-05-01 KR KR1019970707841A patent/KR19990008315A/ko active Search and Examination
- 1996-05-01 WO PCT/JP1996/001193 patent/WO1996036073A1/ja not_active Application Discontinuation
- 1996-05-06 IN IN824CA1996 patent/IN187708B/en unknown
- 1996-05-06 MY MYPI96001700A patent/MY132186A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990008315A (ko) | 1999-01-25 |
| IN187708B (it) | 2002-06-08 |
| MY132186A (en) | 2007-09-28 |
| WO1996036073A1 (fr) | 1996-11-14 |
| TW326099B (en) | 1998-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2857006B2 (ja) | Ｍｏｓ集積回路上の自己整列珪化コバルト | |
| JP4322984B2 (ja) | ナノ結晶を利用した非揮発性記憶素子の形成方法 | |
| JPH09172166A (ja) | 半導体集積回路の形成方法 | |
| JPH07302836A (ja) | 半導体装置のフィールド酸化膜形成方法 | |
| JP2675260B2 (ja) | 半導体素子フィールド酸化膜の製造方法 | |
| JPS60127761A (ja) | Ｍｏｓトランジスタの製造方法 | |
| US6333228B1 (en) | Method to improve the control of bird's beak profile of poly in split gate flash | |
| JPH08306678A (ja) | 半導体装置の製造方法及び半導体装置 | |
| JPH0473296B2 (it) | ||
| JP3436315B2 (ja) | Ｍｏｎｏｓ型半導体不揮発性記憶装置の製造方法及び、半導体装置の製造方法 | |
| JPH0744214B2 (ja) | 半導体装置の製造方法 | |
| JP3093600B2 (ja) | 半導体装置の製造方法 | |
| JP3019998B2 (ja) | 半導体膜の製造方法 | |
| JPH06232155A (ja) | 半導体装置の製造方法 | |
| JPH05183134A (ja) | 不揮発性半導体記憶装置の製造方法 | |
| JPH0338733B2 (it) | ||
| JPH11186253A (ja) | 半導体装置の製造方法 | |
| JP2558289B2 (ja) | 変質層の形成方法 | |
| JPS6141136B2 (it) | ||
| KR100353822B1 (ko) | 반도체 소자의 게이트 전극 형성방법 | |
| JPS5975667A (ja) | 半導体装置の製造方法 | |
| JPH04303925A (ja) | 半導体装置の製造方法 | |
| CN117542732A (zh) | 一种改善蚀刻工序中底部图案损伤的方法 | |
| JPH0982699A (ja) | 半導体装置の製造方法 | |
| JPH08203882A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20041116 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050315 |