JPH07333825A - 減衰型位相シフトマスクおよびそれを製造するためのプロセス - Google Patents
減衰型位相シフトマスクおよびそれを製造するためのプロセスInfo
- Publication number
- JPH07333825A JPH07333825A JP13061695A JP13061695A JPH07333825A JP H07333825 A JPH07333825 A JP H07333825A JP 13061695 A JP13061695 A JP 13061695A JP 13061695 A JP13061695 A JP 13061695A JP H07333825 A JPH07333825 A JP H07333825A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phase shift
- thickness
- shift mask
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000011651 chromium Substances 0.000 claims abstract description 35
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 239000012780 transparent material Substances 0.000 claims abstract description 6
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 4
- 230000002238 attenuated effect Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims 7
- 239000000126 substance Substances 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 19
- 239000010453 quartz Substances 0.000 description 14
- 238000013459 approach Methods 0.000 description 12
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 9
- 229910000423 chromium oxide Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- NAPPWIFDUAHTRY-XYDRQXHOSA-N (8r,9s,10r,13s,14s,17r)-17-ethynyl-17-hydroxy-13-methyl-1,2,6,7,8,9,10,11,12,14,15,16-dodecahydrocyclopenta[a]phenanthren-3-one;(8r,9s,13s,14s,17r)-17-ethynyl-13-methyl-7,8,9,11,12,14,15,16-octahydro-6h-cyclopenta[a]phenanthrene-3,17-diol Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1.OC1=CC=C2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 NAPPWIFDUAHTRY-XYDRQXHOSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25089894A | 1994-05-31 | 1994-05-31 | |
| US250898 | 1994-05-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07333825A true JPH07333825A (ja) | 1995-12-22 |
Family
ID=22949610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13061695A Pending JPH07333825A (ja) | 1994-05-31 | 1995-05-29 | 減衰型位相シフトマスクおよびそれを製造するためのプロセス |
Country Status (7)
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000511301A (ja) * | 1996-05-20 | 2000-08-29 | イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー | 減衰する埋め込まれた移相フォトマスク・ブランク |
| JP2007179056A (ja) * | 2005-12-27 | 2007-07-12 | Interuniv Micro Electronica Centrum Vzw | 減衰型の位相シフトマスクの製造方法およびこれにより得られるデバイス |
| US9885950B2 (en) | 2014-12-10 | 2018-02-06 | Samsung Display Co., Ltd. | Phase shift mask, method for manufacturing the same, and method for forming micro pattern |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100503833B1 (ko) * | 1996-05-20 | 2005-12-21 | 토판 포토마스크스, 인크. | 광감쇠식내장형위상시프트포토마스크블랭크 |
| JP4011687B2 (ja) * | 1997-10-01 | 2007-11-21 | キヤノン株式会社 | マスク構造体、該マスク構造体を用いた露光装置、該マスク構造体を用いた半導体デバイス製造方法 |
| US6013396A (en) * | 1998-10-30 | 2000-01-11 | Advanced Micro Devices, Inc. | Fabrication of chrome/phase grating phase shift mask by interferometric lithography |
| US6037082A (en) * | 1998-10-30 | 2000-03-14 | Advanced Micro Devices, Inc. | Design of a new phase shift mask with alternating chrome/phase structures |
| JP2000286187A (ja) | 1999-03-31 | 2000-10-13 | Canon Inc | 露光装置、該露光装置に用いるマスク構造体、露光方法、前記露光装置を用いて作製された半導体デバイス、および半導体デバイス製造方法 |
| US6401236B1 (en) | 1999-04-05 | 2002-06-04 | Micron Technology Inc. | Method to eliminate side lobe printing of attenuated phase shift |
| US6410191B1 (en) | 1999-06-25 | 2002-06-25 | Advanced Micro Devices, Inc. | Phase-shift photomask for patterning high density features |
| US6214497B1 (en) | 1999-06-29 | 2001-04-10 | Micron Technology, Inc. | Method to eliminate side lobe printing of attenuated phase shift masks |
| US6403267B1 (en) | 2000-01-21 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method for high transmittance attenuated phase-shifting mask fabrication |
| US6277528B1 (en) | 2000-01-21 | 2001-08-21 | Taiwan Semiconductor Manufacturing Company | Method to change transmittance of attenuated phase-shifting masks |
| US6596598B1 (en) | 2000-02-23 | 2003-07-22 | Advanced Micro Devices, Inc. | T-shaped gate device and method for making |
| US6870707B1 (en) | 2000-04-27 | 2005-03-22 | Seagate Technology Llc | Disc head slider having vertically contoured features and method of fabricating vertically contoured features on a slider |
| KR100382699B1 (ko) * | 2000-05-03 | 2003-05-09 | 정선국 | 페달구동장치 |
| US7236328B2 (en) * | 2001-01-10 | 2007-06-26 | Hitachi Global Storage Netherlands, B.V. | Method for producing a transducer slider with tapered edges |
| US6645679B1 (en) | 2001-03-12 | 2003-11-11 | Advanced Micro Devices, Inc. | Attenuated phase shift mask for use in EUV lithography and a method of making such a mask |
| US6599666B2 (en) | 2001-03-15 | 2003-07-29 | Micron Technology, Inc. | Multi-layer, attenuated phase-shifting mask |
| US20060113285A1 (en) * | 2004-12-01 | 2006-06-01 | Lexmark International, Inc. | Methods of laser ablating polymeric materials to provide uniform laser ablated features therein |
| TWI314245B (en) * | 2006-04-28 | 2009-09-01 | Promos Technologies Inc | Phase shifting mask capable of reducing the optical proximity effect and method for preparing a semiconductor device using the same |
| US7675246B2 (en) | 2006-12-18 | 2010-03-09 | Addtek Corp. | Driving circuit and related driving method for providing feedback control and open-circuit protection |
| US8298729B2 (en) | 2010-03-18 | 2012-10-30 | Micron Technology, Inc. | Microlithography masks including image reversal assist features, microlithography systems including such masks, and methods of forming such masks |
| CN103165579A (zh) * | 2011-12-13 | 2013-06-19 | 无锡华润上华半导体有限公司 | 一种硅湿法腐蚀深度的监控结构及监控方法 |
| US10209526B2 (en) * | 2014-01-20 | 2019-02-19 | Yakov Soskind | Electromagnetic radiation enhancement methods and systems |
| US9618664B2 (en) * | 2015-04-15 | 2017-04-11 | Finisar Corporation | Partially etched phase-transforming optical element |
| US10539723B2 (en) | 2016-10-19 | 2020-01-21 | Finisar Corporation | Phase-transforming optical reflector formed by partial etching or by partial etching with reflow |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| EP0401795A3 (en) * | 1989-06-08 | 1991-03-27 | Oki Electric Industry Company, Limited | Phase-shifting photomask for negative resist and process for forming isolated, negative resist pattern using the phaseshifting photomask |
| JPH03144452A (ja) * | 1989-10-30 | 1991-06-19 | Oki Electric Ind Co Ltd | 位相差マスク |
| JP2566048B2 (ja) * | 1990-04-19 | 1996-12-25 | シャープ株式会社 | 光露光用マスク及びその製造方法 |
| DE69131173T2 (de) * | 1990-09-10 | 1999-08-19 | Fujitsu Ltd. | Optische Phasenmaske und Verfahren zur Herstellung |
| US5194345A (en) * | 1991-05-14 | 1993-03-16 | Micron Technology, Inc. | Method of fabricating phase shift reticles |
| US5330862A (en) * | 1991-06-07 | 1994-07-19 | Sharp Kabushiki Kaisha | Method for forming resist mask pattern by light exposure having a phase shifter pattern comprising convex forms in the resist |
| US5286581A (en) * | 1991-08-19 | 1994-02-15 | Motorola, Inc. | Phase-shift mask and method for making |
| KR930011099A (ko) * | 1991-11-15 | 1993-06-23 | 문정환 | 위상 반전 마스크 제조방법 |
| US5272024A (en) * | 1992-04-08 | 1993-12-21 | International Business Machines Corporation | Mask-structure and process to repair missing or unwanted phase-shifting elements |
| US5288569A (en) * | 1992-04-23 | 1994-02-22 | International Business Machines Corporation | Feature biassing and absorptive phase-shifting techniques to improve optical projection imaging |
| US5268244A (en) * | 1992-08-13 | 1993-12-07 | Taiwan Semiconductor Manufacturing Company | Self-aligned phase shifter formation |
| JPH06180497A (ja) * | 1992-12-14 | 1994-06-28 | Toppan Printing Co Ltd | 位相シフトマスクの製造方法 |
| JP3434309B2 (ja) * | 1993-02-18 | 2003-08-04 | 三菱電機株式会社 | 位相シフトマスクの製造方法 |
| KR100311704B1 (ko) * | 1993-08-17 | 2001-12-15 | 기타오카 다카시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및그블랭크스의제조방법 |
-
1995
- 1995-03-24 TW TW084102867A patent/TW270219B/zh active
- 1995-04-11 AT AT95302403T patent/ATE185905T1/de not_active IP Right Cessation
- 1995-04-11 DE DE69512833T patent/DE69512833T2/de not_active Expired - Fee Related
- 1995-04-11 EP EP95302403A patent/EP0686876B1/en not_active Expired - Lifetime
- 1995-05-02 KR KR1019950010727A patent/KR950033661A/ko not_active Ceased
- 1995-05-29 JP JP13061695A patent/JPH07333825A/ja active Pending
- 1995-06-05 US US08/469,148 patent/US5601954A/en not_active Expired - Lifetime
-
1996
- 1996-07-19 US US08/684,506 patent/US5928813A/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000511301A (ja) * | 1996-05-20 | 2000-08-29 | イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー | 減衰する埋め込まれた移相フォトマスク・ブランク |
| JP2007179056A (ja) * | 2005-12-27 | 2007-07-12 | Interuniv Micro Electronica Centrum Vzw | 減衰型の位相シフトマスクの製造方法およびこれにより得られるデバイス |
| US9885950B2 (en) | 2014-12-10 | 2018-02-06 | Samsung Display Co., Ltd. | Phase shift mask, method for manufacturing the same, and method for forming micro pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| ATE185905T1 (de) | 1999-11-15 |
| TW270219B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1996-02-11 |
| DE69512833D1 (de) | 1999-11-25 |
| EP0686876B1 (en) | 1999-10-20 |
| DE69512833T2 (de) | 2000-05-18 |
| US5601954A (en) | 1997-02-11 |
| EP0686876A2 (en) | 1995-12-13 |
| US5928813A (en) | 1999-07-27 |
| EP0686876A3 (en) | 1996-03-20 |
| KR950033661A (ko) | 1995-12-26 |
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