JPH0719136Y2 - シリンダ型気相成長装置 - Google Patents
シリンダ型気相成長装置Info
- Publication number
- JPH0719136Y2 JPH0719136Y2 JP3815985U JP3815985U JPH0719136Y2 JP H0719136 Y2 JPH0719136 Y2 JP H0719136Y2 JP 3815985 U JP3815985 U JP 3815985U JP 3815985 U JP3815985 U JP 3815985U JP H0719136 Y2 JPH0719136 Y2 JP H0719136Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- vapor phase
- phase growth
- rotary drive
- cylinder type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims description 13
- 238000010926 purge Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 description 28
- 239000000428 dust Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3815985U JPH0719136Y2 (ja) | 1985-03-15 | 1985-03-15 | シリンダ型気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3815985U JPH0719136Y2 (ja) | 1985-03-15 | 1985-03-15 | シリンダ型気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61156229U JPS61156229U (enExample) | 1986-09-27 |
| JPH0719136Y2 true JPH0719136Y2 (ja) | 1995-05-01 |
Family
ID=30544905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3815985U Expired - Lifetime JPH0719136Y2 (ja) | 1985-03-15 | 1985-03-15 | シリンダ型気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719136Y2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0528755Y2 (enExample) * | 1986-06-24 | 1993-07-23 | ||
| JP2785614B2 (ja) * | 1992-09-28 | 1998-08-13 | 信越半導体株式会社 | シリンダー型エピタキシャル層成長装置 |
-
1985
- 1985-03-15 JP JP3815985U patent/JPH0719136Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61156229U (enExample) | 1986-09-27 |
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