JPH0654777B2 - ラテラルトランジスタを有する回路 - Google Patents

ラテラルトランジスタを有する回路

Info

Publication number
JPH0654777B2
JPH0654777B2 JP60023653A JP2365385A JPH0654777B2 JP H0654777 B2 JPH0654777 B2 JP H0654777B2 JP 60023653 A JP60023653 A JP 60023653A JP 2365385 A JP2365385 A JP 2365385A JP H0654777 B2 JPH0654777 B2 JP H0654777B2
Authority
JP
Japan
Prior art keywords
transistor
region
collector
circuit
lateral transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60023653A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61183963A (ja
Inventor
郁夫 伏見
孝正 桜木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP60023653A priority Critical patent/JPH0654777B2/ja
Priority to DE19863604173 priority patent/DE3604173A1/de
Publication of JPS61183963A publication Critical patent/JPS61183963A/ja
Priority to US07/219,857 priority patent/US4807009A/en
Publication of JPH0654777B2 publication Critical patent/JPH0654777B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60023653A 1985-02-12 1985-02-12 ラテラルトランジスタを有する回路 Expired - Lifetime JPH0654777B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60023653A JPH0654777B2 (ja) 1985-02-12 1985-02-12 ラテラルトランジスタを有する回路
DE19863604173 DE3604173A1 (de) 1985-02-12 1986-02-10 Lateraltransistor
US07/219,857 US4807009A (en) 1985-02-12 1988-07-13 Lateral transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60023653A JPH0654777B2 (ja) 1985-02-12 1985-02-12 ラテラルトランジスタを有する回路

Publications (2)

Publication Number Publication Date
JPS61183963A JPS61183963A (ja) 1986-08-16
JPH0654777B2 true JPH0654777B2 (ja) 1994-07-20

Family

ID=12116487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60023653A Expired - Lifetime JPH0654777B2 (ja) 1985-02-12 1985-02-12 ラテラルトランジスタを有する回路

Country Status (3)

Country Link
US (1) US4807009A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0654777B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3604173A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4684877A (en) * 1986-06-17 1987-08-04 General Motors Corporation Electrical system utilizing a concentric collector PNP transistor
DE3638923A1 (de) * 1986-11-14 1988-05-26 Telefunken Electronic Gmbh Integrierte schaltungsanordnung
NL8702671A (nl) * 1987-11-09 1989-06-01 Philips Nv Laterale hoogspanningstransistor.
IT1215792B (it) * 1988-02-04 1990-02-22 Sgs Thomson Microelectronics Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.
DE3813436A1 (de) * 1988-04-21 1989-11-02 Siemens Ag Schaltungsanordnung zur verhinderung von substratstroemen
JP3110502B2 (ja) * 1991-07-31 2000-11-20 キヤノン株式会社 カレント・ミラー回路
US5508551A (en) * 1994-03-02 1996-04-16 Harris Corporation Current mirror with saturation limiting
US6137356A (en) * 1998-02-23 2000-10-24 Canon Kabushiki Kaisha Operational amplifier with means for changing a resistance value of an active feedback element
US7071784B2 (en) * 2002-11-29 2006-07-04 Linear Technology Corporation High linearity digital variable gain amplifier

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
US3878551A (en) * 1971-11-30 1975-04-15 Texas Instruments Inc Semiconductor integrated circuits having improved electrical isolation characteristics
US4345166A (en) * 1979-09-28 1982-08-17 Motorola, Inc. Current source having saturation protection
US4350904A (en) * 1980-09-22 1982-09-21 Bell Telephone Laboratories, Incorporated Current source with modified temperature coefficient
JPS589370A (ja) * 1982-06-21 1983-01-19 Nec Corp 横方向トランジスタ

Also Published As

Publication number Publication date
JPS61183963A (ja) 1986-08-16
US4807009A (en) 1989-02-21
DE3604173A1 (de) 1986-08-14
DE3604173C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-02-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term