JPH0621026A - 密閉された光化学反応容器内における酸化膜のエッチング方法 - Google Patents

密閉された光化学反応容器内における酸化膜のエッチング方法

Info

Publication number
JPH0621026A
JPH0621026A JP5101531A JP10153193A JPH0621026A JP H0621026 A JPH0621026 A JP H0621026A JP 5101531 A JP5101531 A JP 5101531A JP 10153193 A JP10153193 A JP 10153193A JP H0621026 A JPH0621026 A JP H0621026A
Authority
JP
Japan
Prior art keywords
oxide
etching
gas
oxide film
photochemical reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5101531A
Other languages
English (en)
Japanese (ja)
Inventor
Robert W Grant
ダブリュ．グラント ロバート
Kevin Torek
トーレック ケビン
Richard E Novak
イー．ノバク リチャード
Jerzy Ruzyllo
ルジーロ ジャージー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUBMICRON SYST Inc
SubMicron Systems Inc
Original Assignee
SUBMICRON SYST Inc
SubMicron Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUBMICRON SYST Inc, SubMicron Systems Inc filed Critical SUBMICRON SYST Inc
Publication of JPH0621026A publication Critical patent/JPH0621026A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP5101531A 1992-04-30 1993-04-27 密閉された光化学反応容器内における酸化膜のエッチング方法 Pending JPH0621026A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/876043 1992-04-30
US07/876,043 US5234540A (en) 1992-04-30 1992-04-30 Process for etching oxide films in a sealed photochemical reactor

Publications (1)

Publication Number Publication Date
JPH0621026A true JPH0621026A (ja) 1994-01-28

Family

ID=25366875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5101531A Pending JPH0621026A (ja) 1992-04-30 1993-04-27 密閉された光化学反応容器内における酸化膜のエッチング方法

Country Status (3)

Country Link
US (1) US5234540A (OSRAM)
EP (1) EP0568363A2 (OSRAM)
JP (1) JPH0621026A (OSRAM)

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KR940012061A (ko) * 1992-11-27 1994-06-22 가나이 쯔또무 유기물제거방법 및 그 방법을 이용하기 위한 유기물제거장치
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US5524272A (en) * 1993-12-22 1996-06-04 Gte Airfone Incorporated Method and apparatus for distributing program material
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
JPH0817815A (ja) * 1994-06-30 1996-01-19 Toshiba Corp 半導体デバイスの製造方法、半導体基板の処理方法、分析方法及び製造方法
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
US5931721A (en) 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US5967156A (en) * 1994-11-07 1999-10-19 Krytek Corporation Processing a surface
US5814562A (en) * 1995-08-14 1998-09-29 Lucent Technologies Inc. Process for semiconductor device fabrication
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US5922219A (en) * 1996-10-31 1999-07-13 Fsi International, Inc. UV/halogen treatment for dry oxide etching
US6065481A (en) 1997-03-26 2000-05-23 Fsi International, Inc. Direct vapor delivery of enabling chemical for enhanced HF etch process performance
US6869487B1 (en) * 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US7416611B2 (en) * 1997-05-09 2008-08-26 Semitool, Inc. Process and apparatus for treating a workpiece with gases
US7404863B2 (en) * 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US20050215063A1 (en) * 1997-05-09 2005-09-29 Bergman Eric J System and methods for etching a silicon wafer using HF and ozone
US7378355B2 (en) * 1997-05-09 2008-05-27 Semitool, Inc. System and methods for polishing a wafer
US7163588B2 (en) * 1997-05-09 2007-01-16 Semitool, Inc. Processing a workpiece using water, a base, and ozone
US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6240933B1 (en) 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US7264680B2 (en) * 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
US20050034745A1 (en) * 1997-05-09 2005-02-17 Semitool, Inc. Processing a workpiece with ozone and a halogenated additive
US6090683A (en) * 1997-06-16 2000-07-18 Micron Technology, Inc. Method of etching thermally grown oxide substantially selectively relative to deposited oxide
US6165853A (en) * 1997-06-16 2000-12-26 Micron Technology, Inc. Trench isolation method
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6126847A (en) 1997-11-24 2000-10-03 Micron Technology Inc. High selectivity etching process for oxides
DE19813757C2 (de) 1998-03-27 2000-12-14 Siemens Ag Verfahren zur Herstellung einer mit Fluor belgten Halbleiteroberfläche
US6544842B1 (en) 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
US7045454B1 (en) 1999-05-11 2006-05-16 Micron Technology, Inc. Chemical mechanical planarization of conductive material
US6290863B1 (en) 1999-07-31 2001-09-18 Micron Technology, Inc. Method and apparatus for etch of a specific subarea of a semiconductor work object
US6287879B1 (en) 1999-08-11 2001-09-11 Micron Technology, Inc. Endpoint stabilization for polishing process
US6150277A (en) * 1999-08-30 2000-11-21 Micron Technology, Inc. Method of making an oxide structure having a finely calibrated thickness
US6995068B1 (en) 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
US20040154743A1 (en) * 2002-11-29 2004-08-12 Savas Stephen E. Apparatus and method for low temperature stripping of photoresist and residues
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
US7468323B2 (en) * 2004-02-27 2008-12-23 Micron Technology, Inc. Method of forming high aspect ratio structures
US20060046499A1 (en) * 2004-08-20 2006-03-02 Dolechek Kert L Apparatus for use in thinning a semiconductor workpiece
US7354649B2 (en) 2004-08-20 2008-04-08 Semitool, Inc. Semiconductor workpiece
US20060040111A1 (en) * 2004-08-20 2006-02-23 Dolechek Kert L Process chamber and system for thinning a semiconductor workpiece
US7193295B2 (en) * 2004-08-20 2007-03-20 Semitool, Inc. Process and apparatus for thinning a semiconductor workpiece
US7288489B2 (en) * 2004-08-20 2007-10-30 Semitool, Inc. Process for thinning a semiconductor workpiece
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
KR100752642B1 (ko) * 2005-02-02 2007-08-29 삼성전자주식회사 반도체소자의 커패시터 제조방법
EP1851360A2 (en) * 2005-02-22 2007-11-07 Nanoscale Components, Inc. Pressurized reactor for thin film deposition
JP5958950B2 (ja) * 2011-07-13 2016-08-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
JP7461923B2 (ja) 2018-07-09 2024-04-04 ラム リサーチ コーポレーション 電子励起原子層エッチング
JP7530564B2 (ja) * 2020-05-29 2024-08-08 ウシオ電機株式会社 還元処理方法
JP7739434B2 (ja) 2021-02-03 2025-09-16 ラム リサーチ コーポレーション 原子層エッチングにおけるエッチング選択性の制御

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US4605479A (en) * 1985-06-24 1986-08-12 Rca Corporation In-situ cleaned ohmic contacts
JPH069195B2 (ja) * 1989-05-06 1994-02-02 大日本スクリーン製造株式会社 基板の表面処理方法
US5022961B1 (en) * 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
GB2234631B (en) * 1989-07-27 1993-02-17 Stc Plc Selective etching of insulating materials
JP2553946B2 (ja) * 1990-02-20 1996-11-13 信淳 渡辺 基板表面処理用ガスの供給方法

Also Published As

Publication number Publication date
EP0568363A3 (OSRAM) 1994-03-30
EP0568363A2 (en) 1993-11-03
US5234540A (en) 1993-08-10

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