GB2234631B - Selective etching of insulating materials - Google Patents

Selective etching of insulating materials

Info

Publication number
GB2234631B
GB2234631B GB8917213A GB8917213A GB2234631B GB 2234631 B GB2234631 B GB 2234631B GB 8917213 A GB8917213 A GB 8917213A GB 8917213 A GB8917213 A GB 8917213A GB 2234631 B GB2234631 B GB 2234631B
Authority
GB
United Kingdom
Prior art keywords
insulating materials
selective etching
etching
selective
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8917213A
Other versions
GB8917213D0 (en
GB2234631A (en
Inventor
Stephen Rolt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stc PLC
NORTHERN TELECOM EUROP Ltd
Original Assignee
NORTHERN TELECOM EUROP LTD
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NORTHERN TELECOM EUROP LTD, STC PLC filed Critical NORTHERN TELECOM EUROP LTD
Priority to GB8917213A priority Critical patent/GB2234631B/en
Publication of GB8917213D0 publication Critical patent/GB8917213D0/en
Publication of GB2234631A publication Critical patent/GB2234631A/en
Application granted granted Critical
Publication of GB2234631B publication Critical patent/GB2234631B/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
GB8917213A 1989-07-27 1989-07-27 Selective etching of insulating materials Expired - Fee Related GB2234631B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8917213A GB2234631B (en) 1989-07-27 1989-07-27 Selective etching of insulating materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8917213A GB2234631B (en) 1989-07-27 1989-07-27 Selective etching of insulating materials

Publications (3)

Publication Number Publication Date
GB8917213D0 GB8917213D0 (en) 1989-09-13
GB2234631A GB2234631A (en) 1991-02-06
GB2234631B true GB2234631B (en) 1993-02-17

Family

ID=10660731

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8917213A Expired - Fee Related GB2234631B (en) 1989-07-27 1989-07-27 Selective etching of insulating materials

Country Status (1)

Country Link
GB (1) GB2234631B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234540A (en) * 1992-04-30 1993-08-10 Submicron Systems, Inc. Process for etching oxide films in a sealed photochemical reactor
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008348A1 (en) * 1978-08-21 1980-03-05 International Business Machines Corporation A method of etching a surface
EP0175561A2 (en) * 1984-09-21 1986-03-26 Kabushiki Kaisha Toshiba Dry-etching method and apparatus therefor
EP0259572A2 (en) * 1986-09-12 1988-03-16 International Business Machines Corporation High rate laser etching technique

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008348A1 (en) * 1978-08-21 1980-03-05 International Business Machines Corporation A method of etching a surface
EP0175561A2 (en) * 1984-09-21 1986-03-26 Kabushiki Kaisha Toshiba Dry-etching method and apparatus therefor
EP0259572A2 (en) * 1986-09-12 1988-03-16 International Business Machines Corporation High rate laser etching technique

Also Published As

Publication number Publication date
GB8917213D0 (en) 1989-09-13
GB2234631A (en) 1991-02-06

Similar Documents

Publication Publication Date Title
DE3570805D1 (en) Plasma etching apparatus
GB2204445B (en) Semiconductor switch
GB8807488D0 (en) Method of assay
EP0325243A3 (en) Etching apparatus
GB2220108B (en) Method of forming conductors
HK1006612A1 (en) Field assembly insulator
IE870661L (en) Insulation material
IN167087B (en) Gas-blast switch
PL307308A1 (en) Insulating assembly
EP0430889A3 (en) Multiple insulating glazing
JPS61256728A (en) Silicon etching
JPS62121292A (en) Insulating material
JPS6336531A (en) Selective etching
EP0301335A3 (en) Method of dry etching
JPS63116431A (en) Etching
JPS6383079A (en) Manufacture of 2-chloro-5-chloromethlthiazole
GB8516853D0 (en) Manufacture of semiconductor structures
JPS61194834A (en) Etching of polysilicon
AU1374588A (en) Insulating structure
JPS61158146A (en) Manufacture of device
EP0414372A3 (en) Dry etching methods
AU583953B2 (en) Ceramic structures
JPS62172611A (en) Switch and manufacture thereof
SG67341A1 (en) Manufacture of semiconductor devices
GB8923408D0 (en) Electrical insulator

Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020727