JPH0587190B2 - - Google Patents

Info

Publication number
JPH0587190B2
JPH0587190B2 JP62252792A JP25279287A JPH0587190B2 JP H0587190 B2 JPH0587190 B2 JP H0587190B2 JP 62252792 A JP62252792 A JP 62252792A JP 25279287 A JP25279287 A JP 25279287A JP H0587190 B2 JPH0587190 B2 JP H0587190B2
Authority
JP
Japan
Prior art keywords
gaas
aln
mis
atmosphere
excess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62252792A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0194662A (ja
Inventor
Shinji Fujeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP25279287A priority Critical patent/JPH0194662A/ja
Publication of JPH0194662A publication Critical patent/JPH0194662A/ja
Publication of JPH0587190B2 publication Critical patent/JPH0587190B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP25279287A 1987-10-06 1987-10-06 砒化ガリウムを用いたｍｉｓ型半導体装置の製造方法 Granted JPH0194662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25279287A JPH0194662A (ja) 1987-10-06 1987-10-06 砒化ガリウムを用いたｍｉｓ型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25279287A JPH0194662A (ja) 1987-10-06 1987-10-06 砒化ガリウムを用いたｍｉｓ型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPH0194662A JPH0194662A (ja) 1989-04-13
JPH0587190B2 true JPH0587190B2 (enrdf_load_stackoverflow) 1993-12-15

Family

ID=17242315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25279287A Granted JPH0194662A (ja) 1987-10-06 1987-10-06 砒化ガリウムを用いたｍｉｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH0194662A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990064934A (ko) * 1999-05-25 1999-08-05 이환철 금속-절연체-반도체소자용 절연박막의 제조방법
EP2306497B1 (en) * 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6294944A (ja) * 1985-10-21 1987-05-01 Nec Corp ３−５化合物半導体のｍｉｓ構造形成方法

Also Published As

Publication number Publication date
JPH0194662A (ja) 1989-04-13

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