JPH0587137B2 - - Google Patents
Info
- Publication number
- JPH0587137B2 JPH0587137B2 JP61169223A JP16922386A JPH0587137B2 JP H0587137 B2 JPH0587137 B2 JP H0587137B2 JP 61169223 A JP61169223 A JP 61169223A JP 16922386 A JP16922386 A JP 16922386A JP H0587137 B2 JPH0587137 B2 JP H0587137B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- wiring
- layer
- forming
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 10
- 238000001552 radio frequency sputter deposition Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018594 Si-Cu Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008465 Si—Cu Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16922386A JPS6325976A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16922386A JPS6325976A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6325976A JPS6325976A (ja) | 1988-02-03 |
| JPH0587137B2 true JPH0587137B2 (nl) | 1993-12-15 |
Family
ID=15882501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16922386A Granted JPS6325976A (ja) | 1986-07-18 | 1986-07-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6325976A (nl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2753058B2 (ja) * | 1989-07-27 | 1998-05-18 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2838836B2 (ja) * | 1990-04-26 | 1998-12-16 | 富士通株式会社 | 半導体集積回路及び半導体集積回路装置 |
| JPH104092A (ja) * | 1996-06-14 | 1998-01-06 | Nec Corp | 半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020548A (ja) * | 1983-07-15 | 1985-02-01 | Hitachi Ltd | 集積回路における入力保護装置 |
| JPS6037160A (ja) * | 1983-08-08 | 1985-02-26 | Nec Corp | 半導体集積回路装置 |
-
1986
- 1986-07-18 JP JP16922386A patent/JPS6325976A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6020548A (ja) * | 1983-07-15 | 1985-02-01 | Hitachi Ltd | 集積回路における入力保護装置 |
| JPS6037160A (ja) * | 1983-08-08 | 1985-02-26 | Nec Corp | 半導体集積回路装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6325976A (ja) | 1988-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3995301A (en) | Novel integratable Schottky Barrier structure and a method for the fabrication thereof | |
| JPH0220140B2 (nl) | ||
| JP4216588B2 (ja) | キャパシタの製造方法 | |
| US4729969A (en) | Method for forming silicide electrode in semiconductor device | |
| US4718977A (en) | Process for forming semiconductor device having multi-thickness metallization | |
| US7638412B2 (en) | Method and system for reducing charge damage in silicon-on-insulator technology | |
| JPH0587137B2 (nl) | ||
| JPS609159A (ja) | 半導体装置 | |
| EP0917200A1 (en) | Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method | |
| JP3311759B2 (ja) | スクリーン構造を有する集積回路およびその製造方法 | |
| EP0110656B1 (en) | Semiconductor device and method of manufacturing the same | |
| JPH0241902B2 (nl) | ||
| US20170154974A1 (en) | Semiconductor Device and Method for Producing a Semiconductor Device | |
| KR910007513B1 (ko) | 반도체장치의 배선접속부 | |
| JPH0286160A (ja) | 半導体装置 | |
| JPS6020568A (ja) | 半導体装置 | |
| JP2719569B2 (ja) | 半導体装置 | |
| JPH0441499B2 (nl) | ||
| KR930011461B1 (ko) | 반도체 집접회로의 서브미크론 전극배선 형성방법 | |
| JPH0834245B2 (ja) | 半導体装置の製造方法 | |
| JPH0462838A (ja) | 半導体装置 | |
| GB1594067A (en) | Semiconductor devices and their manufacture | |
| JPH01243543A (ja) | 半導体装置 | |
| JPH022131A (ja) | 半導体集積回路装置 | |
| JPH11111719A (ja) | 半導体装置およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |