JPH0441499B2 - - Google Patents
Info
- Publication number
- JPH0441499B2 JPH0441499B2 JP29500885A JP29500885A JPH0441499B2 JP H0441499 B2 JPH0441499 B2 JP H0441499B2 JP 29500885 A JP29500885 A JP 29500885A JP 29500885 A JP29500885 A JP 29500885A JP H0441499 B2 JPH0441499 B2 JP H0441499B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- conductivity type
- metal electrode
- semiconductor substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29500885A JPS62154661A (ja) | 1985-12-26 | 1985-12-26 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29500885A JPS62154661A (ja) | 1985-12-26 | 1985-12-26 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62154661A JPS62154661A (ja) | 1987-07-09 |
| JPH0441499B2 true JPH0441499B2 (nl) | 1992-07-08 |
Family
ID=17815141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29500885A Granted JPS62154661A (ja) | 1985-12-26 | 1985-12-26 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62154661A (nl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2786652B2 (ja) * | 1989-02-28 | 1998-08-13 | 株式会社東芝 | 半導体装置 |
| US5706163A (en) * | 1995-11-28 | 1998-01-06 | California Micro Devices Corporation | ESD-protected thin film capacitor structures |
| JP5072282B2 (ja) * | 2006-07-31 | 2012-11-14 | 新日本無線株式会社 | 半導体装置 |
| US11063034B2 (en) | 2019-06-27 | 2021-07-13 | Micron Technology, Inc. | Capacitor structures |
-
1985
- 1985-12-26 JP JP29500885A patent/JPS62154661A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62154661A (ja) | 1987-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH11251574A (ja) | 静電気保護回路 | |
| JPH09331072A (ja) | 半導体装置及びその製造方法 | |
| JPH0441500B2 (nl) | ||
| JP3189589B2 (ja) | 絶縁ゲート型半導体装置 | |
| JPH0936307A (ja) | Ｍｏｓキャパシタ | |
| JPH0441499B2 (nl) | ||
| JP2579989B2 (ja) | 静電破壊保護装置 | |
| JP3217552B2 (ja) | 横型高耐圧半導体素子 | |
| JP3242478B2 (ja) | 高耐圧半導体装置 | |
| JPS61174672A (ja) | 縦型ｍｏｓトランジスタ | |
| JPH07321307A (ja) | 半導体装置 | |
| JPH0478018B2 (nl) | ||
| JPH07147384A (ja) | 半導体装置 | |
| JPS6156458A (ja) | 半導体装置 | |
| JPH0454978B2 (nl) | ||
| JPH06151715A (ja) | 半導体集積回路の静電保護回路素子 | |
| JPH02283070A (ja) | 入力保護回路を備えた半導体集積回路装置 | |
| JPH0587137B2 (nl) | ||
| JP2774220B2 (ja) | 半導体装置 | |
| JPS5898966A (ja) | 半導体装置の入力保護装置 | |
| JPH05160341A (ja) | 集積回路装置のノイズ除去用キャパシタ | |
| JP2830092B2 (ja) | 半導体装置の静電保護素子 | |
| JPS61296760A (ja) | 半導体装置 | |
| KR100240684B1 (ko) | 반도체장치의 이에스디 보호회로 | |
| JPS60153157A (ja) | バイポ−ラ集積回路 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |