JPH0586869B2 - - Google Patents

Info

Publication number
JPH0586869B2
JPH0586869B2 JP59225926A JP22592684A JPH0586869B2 JP H0586869 B2 JPH0586869 B2 JP H0586869B2 JP 59225926 A JP59225926 A JP 59225926A JP 22592684 A JP22592684 A JP 22592684A JP H0586869 B2 JPH0586869 B2 JP H0586869B2
Authority
JP
Japan
Prior art keywords
diffusion layer
impurity region
source
conductivity type
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59225926A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61104667A (ja
Inventor
Takashi Ono
Satoru Namaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59225926A priority Critical patent/JPS61104667A/ja
Publication of JPS61104667A publication Critical patent/JPS61104667A/ja
Publication of JPH0586869B2 publication Critical patent/JPH0586869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations 
JP59225926A 1984-10-29 1984-10-29 Ｍｏｓトランジスタ Granted JPS61104667A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59225926A JPS61104667A (ja) 1984-10-29 1984-10-29 Ｍｏｓトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59225926A JPS61104667A (ja) 1984-10-29 1984-10-29 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS61104667A JPS61104667A (ja) 1986-05-22
JPH0586869B2 true JPH0586869B2 (enrdf_load_stackoverflow) 1993-12-14

Family

ID=16837054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59225926A Granted JPS61104667A (ja) 1984-10-29 1984-10-29 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS61104667A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07297394A (ja) * 1994-04-26 1995-11-10 Nec Corp 半導体装置およびその製造方法
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054792B2 (ja) * 1977-03-04 1985-12-02 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
JPS61104667A (ja) 1986-05-22

Similar Documents

Publication Publication Date Title
US4668970A (en) Semiconductor device
US4853340A (en) Semiconductor device isolated by a pair of field oxide regions
US5623154A (en) Semiconductor device having triple diffusion
JPS59121976A (ja) 半導体装置
US5545911A (en) Semiconductor device having mosfets formed in inherent and well regions of a semiconductor substrate
JPH0586869B2 (enrdf_load_stackoverflow)
US5219770A (en) Method for fabricating a MISFET including a common contact window
JP2510599B2 (ja) 電界効果トランジスタ
JP3363810B2 (ja) 半導体装置とその製造方法
JPS6119174A (ja) 半導体装置
JPH08288379A (ja) 半導体装置及びその製造方法
US4622571A (en) CMOS integrated circuit device
JP3132126B2 (ja) 半導体装置およびその製造方法
JP3431353B2 (ja) 半導体装置およびその製造方法
JP3049725B2 (ja) Ｍｏｓトランジスタ
EP0145583A2 (en) Metal insulator semiconductor device and method for the fabrication thereof
JP2517452B2 (ja) 半導体装置
JP3196313B2 (ja) 半導体装置の製造方法
US20070187798A1 (en) Semiconductor device and method of manufacturing the same
JPS627148A (ja) 相補型半導体装置及びその製造方法
JP2970376B2 (ja) 相補型半導体装置の製造方法
JP4146374B2 (ja) 半導体装置の製造方法
JPS61100975A (ja) 接合形電界効果トランジスタ
JP3162937B2 (ja) Ｃｍｏｓ半導体装置の製造方法
JPH02105566A (ja) 相補型半導体装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term