JPH0586646B2 - - Google Patents

Info

Publication number
JPH0586646B2
JPH0586646B2 JP2444484A JP2444484A JPH0586646B2 JP H0586646 B2 JPH0586646 B2 JP H0586646B2 JP 2444484 A JP2444484 A JP 2444484A JP 2444484 A JP2444484 A JP 2444484A JP H0586646 B2 JPH0586646 B2 JP H0586646B2
Authority
JP
Japan
Prior art keywords
substrate
buffer layer
film
metal
inn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2444484A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60173829A (ja
Inventor
Sakae Maebotoke
Morio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59024444A priority Critical patent/JPS60173829A/ja
Publication of JPS60173829A publication Critical patent/JPS60173829A/ja
Publication of JPH0586646B2 publication Critical patent/JPH0586646B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59024444A 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法 Granted JPS60173829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59024444A JPS60173829A (ja) 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59024444A JPS60173829A (ja) 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法

Publications (2)

Publication Number Publication Date
JPS60173829A JPS60173829A (ja) 1985-09-07
JPH0586646B2 true JPH0586646B2 (enExample) 1993-12-13

Family

ID=12138309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024444A Granted JPS60173829A (ja) 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法

Country Status (1)

Country Link
JP (1) JPS60173829A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163404A (ja) * 1997-11-25 1999-06-18 Toyoda Gosei Co Ltd ＧａＮ系半導体
WO2007129773A1 (ja) 2006-05-10 2007-11-15 Showa Denko K.K. Iii族窒化物化合物半導体積層構造体
WO2008020599A1 (fr) 2006-08-18 2008-02-21 Showa Denko K.K. Procédé de fabrication d'un dispositif électroluminescent comportant un semi-conducteur formé d'un nitrure du groupe iii, dispositif électroluminescent correspondant et lampe
WO2008041499A1 (fr) 2006-09-29 2008-04-10 Showa Denko K.K. Procédé de dépôt en film pour une structure stratifiée de semi-conducteur de nitrure de groupe iii
WO2008075559A1 (ja) 2006-12-20 2008-06-26 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
WO2009041256A1 (ja) 2007-09-27 2009-04-02 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
DE112007002182T5 (de) 2006-09-26 2009-07-09 Showa Denko K.K. Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, Verfahren zum Herstellen einer Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, und Lampe
WO2009113458A1 (ja) 2008-03-13 2009-09-17 昭和電工株式会社 Ｉｉｉ族窒化物半導体素子及びその製造方法、ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2009277882A (ja) * 2008-05-14 2009-11-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8097482B2 (en) 2007-06-11 2012-01-17 Showa Denko K.K Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
US8106419B2 (en) 2006-11-08 2012-01-31 Showa Denko K.K. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
US8198179B2 (en) 2007-02-21 2012-06-12 Showa Denko K.K. Method for producing group III nitride semiconductor light-emitting device
US8557092B2 (en) 2006-10-20 2013-10-15 Toyoda Gosei Co., Ltd. Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus
US8674398B2 (en) 2007-07-04 2014-03-18 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light emitting device and production method thereof, and lamp

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2631285B2 (ja) * 1987-01-31 1997-07-16 豊田合成 株式会社 窒化ガリウム系化合物半導体の気相成長方法
JP2631286B2 (ja) * 1987-01-31 1997-07-16 豊田合成 株式会社 窒化ガリウム系化合物半導体の気相成長方法
JPS63188938A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
CA2037198C (en) 1990-02-28 1996-04-23 Katsuhide Manabe Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
JP2623466B2 (ja) * 1990-02-28 1997-06-25 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP2791448B2 (ja) * 1991-04-19 1998-08-27 日亜化学工業 株式会社 発光ダイオード
JPH0583184U (ja) * 1991-05-30 1993-11-09 株式会社工業技術研究所 移動式足場
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
JP2657743B2 (ja) * 1992-10-29 1997-09-24 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
DE19613265C1 (de) * 1996-04-02 1997-04-17 Siemens Ag Bauelement in stickstoffhaltigem Halbleitermaterial
US6713789B1 (en) 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
JP3994623B2 (ja) 2000-04-21 2007-10-24 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2372635B (en) * 2000-08-18 2005-01-19 Showa Denko Kk Method of fabricating group-III nitride semiconductor crystals.
JP3631724B2 (ja) * 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP3521201B2 (ja) * 2001-08-06 2004-04-19 豊田合成株式会社 窒化ガリウム化合物半導体の製造方法
JP4289203B2 (ja) * 2004-04-15 2009-07-01 豊田合成株式会社 ＧａＮ系半導体
US8035113B2 (en) 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
ATE527571T1 (de) 2004-04-15 2011-10-15 Univ Boston Optische bauelemente mit texturierten halbleiterschichten
WO2007052840A1 (en) 2005-11-07 2007-05-10 Showa Denko K.K. Semiconductor light-emitting diode
JP4637781B2 (ja) 2006-03-31 2011-02-23 昭和電工株式会社 ＧａＮ系半導体発光素子の製造方法
JP2009054767A (ja) * 2006-10-10 2009-03-12 Showa Denko Kk Ｉｉｉ族窒化物半導体の積層構造及びその製造方法と半導体発光素子とランプ
JP2008153603A (ja) 2006-12-20 2008-07-03 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP2008177523A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
KR101071450B1 (ko) * 2006-12-22 2011-10-10 쇼와 덴코 가부시키가이샤 Ⅲ족 질화물 반도체층의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
JP4908381B2 (ja) 2006-12-22 2012-04-04 昭和電工株式会社 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8592800B2 (en) 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
JP2009283785A (ja) * 2008-05-23 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP2009283895A (ja) * 2008-12-15 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体
JP2011082570A (ja) * 2011-01-11 2011-04-21 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163404A (ja) * 1997-11-25 1999-06-18 Toyoda Gosei Co Ltd ＧａＮ系半導体
WO2007129773A1 (ja) 2006-05-10 2007-11-15 Showa Denko K.K. Iii族窒化物化合物半導体積層構造体
WO2008020599A1 (fr) 2006-08-18 2008-02-21 Showa Denko K.K. Procédé de fabrication d'un dispositif électroluminescent comportant un semi-conducteur formé d'un nitrure du groupe iii, dispositif électroluminescent correspondant et lampe
US8227284B2 (en) 2006-08-18 2012-07-24 Showa Denko K.K. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
DE112007002182B4 (de) 2006-09-26 2023-02-16 Toyoda Gosei Co., Ltd. Verfahren zum Herstellen einer Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung
DE112007002182T5 (de) 2006-09-26 2009-07-09 Showa Denko K.K. Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, Verfahren zum Herstellen einer Gruppe-III-Nitridverbindungshalbleiter-Lichtemissionsvorrichtung, und Lampe
WO2008041499A1 (fr) 2006-09-29 2008-04-10 Showa Denko K.K. Procédé de dépôt en film pour une structure stratifiée de semi-conducteur de nitrure de groupe iii
US8389313B2 (en) 2006-09-29 2013-03-05 Toyoda Gosei Co., Ltd. Deposition method of III group nitride compound semiconductor laminated structure
US8557092B2 (en) 2006-10-20 2013-10-15 Toyoda Gosei Co., Ltd. Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus
US8106419B2 (en) 2006-11-08 2012-01-31 Showa Denko K.K. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
WO2008075559A1 (ja) 2006-12-20 2008-06-26 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US8198179B2 (en) 2007-02-21 2012-06-12 Showa Denko K.K. Method for producing group III nitride semiconductor light-emitting device
US8097482B2 (en) 2007-06-11 2012-01-17 Showa Denko K.K Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
US8674398B2 (en) 2007-07-04 2014-03-18 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light emitting device and production method thereof, and lamp
WO2009041256A1 (ja) 2007-09-27 2009-04-02 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
WO2009113458A1 (ja) 2008-03-13 2009-09-17 昭和電工株式会社 Ｉｉｉ族窒化物半導体素子及びその製造方法、ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2009277882A (ja) * 2008-05-14 2009-11-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Also Published As

Publication number Publication date
JPS60173829A (ja) 1985-09-07

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