JPS60173829A - 化合物半導体薄膜の成長方法 - Google Patents

化合物半導体薄膜の成長方法

Info

Publication number
JPS60173829A
JPS60173829A JP59024444A JP2444484A JPS60173829A JP S60173829 A JPS60173829 A JP S60173829A JP 59024444 A JP59024444 A JP 59024444A JP 2444484 A JP2444484 A JP 2444484A JP S60173829 A JPS60173829 A JP S60173829A
Authority
JP
Japan
Prior art keywords
substrate
buffer layer
metal
film
inn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59024444A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586646B2 (enExample
Inventor
Sakae Maebotoke
栄 前佛
Morio Kobayashi
盛男 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59024444A priority Critical patent/JPS60173829A/ja
Publication of JPS60173829A publication Critical patent/JPS60173829A/ja
Publication of JPH0586646B2 publication Critical patent/JPH0586646B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59024444A 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法 Granted JPS60173829A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59024444A JPS60173829A (ja) 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59024444A JPS60173829A (ja) 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法

Publications (2)

Publication Number Publication Date
JPS60173829A true JPS60173829A (ja) 1985-09-07
JPH0586646B2 JPH0586646B2 (enExample) 1993-12-13

Family

ID=12138309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59024444A Granted JPS60173829A (ja) 1984-02-14 1984-02-14 化合物半導体薄膜の成長方法

Country Status (1)

Country Link
JP (1) JPS60173829A (enExample)

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188933A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JPS63188938A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JPS63188932A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JPH03252175A (ja) * 1990-02-28 1991-11-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
JPH04297023A (ja) * 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JPH04321280A (ja) * 1991-04-19 1992-11-11 Nichia Chem Ind Ltd 発光ダイオード
JPH0583184U (ja) * 1991-05-30 1993-11-09 株式会社工業技術研究所 移動式足場
US5389571A (en) * 1991-12-18 1995-02-14 Hiroshi Amano Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer
EP0800214A1 (de) * 1996-04-02 1997-10-08 Siemens Aktiengesellschaft Bauelement in stickstoffhaltigem Halbleitermaterial
US5905276A (en) * 1992-10-29 1999-05-18 Isamu Akasaki Light emitting semiconductor device using nitrogen-Group III compound
EP1041609A1 (en) * 1999-03-31 2000-10-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6249012B1 (en) 1990-02-28 2001-06-19 Toyoda Gosei Co., Ltd. Light emitting semiconductor device using gallium nitride group compound
WO2001082347A1 (en) * 2000-04-21 2001-11-01 Toyoda Gosei Co., Ltd. Method of manufacturing group-iii nitride compound semiconductor device
WO2002017369A1 (en) * 2000-08-18 2002-02-28 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
JP2002100807A (ja) * 2001-08-06 2002-04-05 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
JP2004247753A (ja) * 2004-04-15 2004-09-02 Toyoda Gosei Co Ltd ＧａＮ系半導体
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6924159B2 (en) 2001-03-27 2005-08-02 Nec Corporation Semiconductor substrate made of group III nitride, and process for manufacture thereof
WO2008041586A1 (fr) * 2006-09-26 2008-04-10 Showa Denko K.K. Procédé de fabrication de dispositif semiconducteur émetteur de lumière à composé de nitrure de groupe iii, ce dispositif et lampe associée
WO2008056637A1 (fr) * 2006-11-08 2008-05-15 Showa Denko K.K. Procédé de fabrication d'élément émetteur de lumière semi-conducteur à composé de nitrure de groupe iii, cet élément et lampe associée
WO2008075559A1 (ja) * 2006-12-20 2008-06-26 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
WO2008081717A1 (ja) * 2006-12-22 2008-07-10 Showa Denko K.K. Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008177523A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
WO2009041256A1 (ja) * 2007-09-27 2009-04-02 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2009123717A (ja) * 2006-12-22 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2009283895A (ja) * 2008-12-15 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体
JP2009283785A (ja) * 2008-05-23 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP2010147497A (ja) * 2006-10-10 2010-07-01 Showa Denko Kk Ｉｉｉ族窒化物半導体の積層構造の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法
US7777241B2 (en) 2004-04-15 2010-08-17 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
JP2011082570A (ja) * 2011-01-11 2011-04-21 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法
US7968361B2 (en) 2006-03-31 2011-06-28 Showa Denko K.K. GaN based semiconductor light emitting device and lamp
US8035113B2 (en) 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8168460B2 (en) 2006-12-20 2012-05-01 Showa Denko K.K. Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp
US8299451B2 (en) 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
US8592800B2 (en) 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163404A (ja) * 1997-11-25 1999-06-18 Toyoda Gosei Co Ltd ＧａＮ系半導体
JPWO2007129773A1 (ja) 2006-05-10 2009-09-17 昭和電工株式会社 Ｉｉｉ族窒化物化合物半導体積層構造体
WO2008020599A1 (fr) 2006-08-18 2008-02-21 Showa Denko K.K. Procédé de fabrication d'un dispositif électroluminescent comportant un semi-conducteur formé d'un nitrure du groupe iii, dispositif électroluminescent correspondant et lampe
EP2071053B1 (en) 2006-09-29 2019-02-27 Toyoda Gosei Co., Ltd. Filming method for iii-group nitride semiconductor laminated structure
JP5272361B2 (ja) 2006-10-20 2013-08-28 豊田合成株式会社 スパッタ成膜装置およびスパッタ成膜装置用のバッキングプレート
JP4191227B2 (ja) 2007-02-21 2008-12-03 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ
JP5049659B2 (ja) 2007-06-11 2012-10-17 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP4714712B2 (ja) 2007-07-04 2011-06-29 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
CN102017082B (zh) 2008-03-13 2013-03-20 昭和电工株式会社 Ⅲ族氮化物半导体元件及其制造方法、ⅲ族氮化物半导体发光元件及其制造方法和灯
JP2009277882A (ja) * 2008-05-14 2009-11-26 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188933A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JPS63188938A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JPS63188932A (ja) * 1987-01-31 1988-08-04 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体の気相成長方法
JPH03252175A (ja) * 1990-02-28 1991-11-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6249012B1 (en) 1990-02-28 2001-06-19 Toyoda Gosei Co., Ltd. Light emitting semiconductor device using gallium nitride group compound
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
JPH04297023A (ja) * 1991-01-31 1992-10-21 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体の結晶成長方法
JPH04321280A (ja) * 1991-04-19 1992-11-11 Nichia Chem Ind Ltd 発光ダイオード
JPH0583184U (ja) * 1991-05-30 1993-11-09 株式会社工業技術研究所 移動式足場
US5389571A (en) * 1991-12-18 1995-02-14 Hiroshi Amano Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer
US5905276A (en) * 1992-10-29 1999-05-18 Isamu Akasaki Light emitting semiconductor device using nitrogen-Group III compound
EP0800214A1 (de) * 1996-04-02 1997-10-08 Siemens Aktiengesellschaft Bauelement in stickstoffhaltigem Halbleitermaterial
EP1041609A1 (en) * 1999-03-31 2000-10-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US6939733B2 (en) 1999-03-31 2005-09-06 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
WO2001082347A1 (en) * 2000-04-21 2001-11-01 Toyoda Gosei Co., Ltd. Method of manufacturing group-iii nitride compound semiconductor device
US6830949B2 (en) 2000-04-21 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group-III nitride compound semiconductor device
KR100504161B1 (ko) * 2000-04-21 2005-07-28 도요다 고세이 가부시키가이샤 Ⅲ족 질화물계 화합물 반도체 소자의 제조 방법
WO2002017369A1 (en) * 2000-08-18 2002-02-28 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
GB2372635A (en) * 2000-08-18 2002-08-28 Showa Denko Kk Method of fabricating group-III nitride semiconductor crystal,metho of fabricating gallium nitride-based compound semiconductor,gallium nitride-based compound
GB2372635B (en) * 2000-08-18 2005-01-19 Showa Denko Kk Method of fabricating group-III nitride semiconductor crystals.
US6924159B2 (en) 2001-03-27 2005-08-02 Nec Corporation Semiconductor substrate made of group III nitride, and process for manufacture thereof
KR100518353B1 (ko) * 2001-03-27 2005-10-12 히다찌 케이블 리미티드 Ｉｉｉ족질화물로 된 반도체기판 및 그 제조방법
JP2002100807A (ja) * 2001-08-06 2002-04-05 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子の製造方法
JP2004247753A (ja) * 2004-04-15 2004-09-02 Toyoda Gosei Co Ltd ＧａＮ系半導体
US7777241B2 (en) 2004-04-15 2010-08-17 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8035113B2 (en) 2004-04-15 2011-10-11 The Trustees Of Boston University Optical devices featuring textured semiconductor layers
US8299451B2 (en) 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
US7968361B2 (en) 2006-03-31 2011-06-28 Showa Denko K.K. GaN based semiconductor light emitting device and lamp
WO2008041586A1 (fr) * 2006-09-26 2008-04-10 Showa Denko K.K. Procédé de fabrication de dispositif semiconducteur émetteur de lumière à composé de nitrure de groupe iii, ce dispositif et lampe associée
JP2008109084A (ja) * 2006-09-26 2008-05-08 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP2010147497A (ja) * 2006-10-10 2010-07-01 Showa Denko Kk Ｉｉｉ族窒化物半導体の積層構造の製造方法及びｉｉｉ族窒化物半導体発光素子の製造方法
US9040319B2 (en) 2006-11-08 2015-05-26 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
JP2008124060A (ja) * 2006-11-08 2008-05-29 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
US8106419B2 (en) 2006-11-08 2012-01-31 Showa Denko K.K. Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp
WO2008056637A1 (fr) * 2006-11-08 2008-05-15 Showa Denko K.K. Procédé de fabrication d'élément émetteur de lumière semi-conducteur à composé de nitrure de groupe iii, cet élément et lampe associée
WO2008075559A1 (ja) * 2006-12-20 2008-06-26 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008177525A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008177523A (ja) * 2006-12-20 2008-07-31 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
US8273592B2 (en) 2006-12-20 2012-09-25 Showa Denko K.K. Method of manufacturing group-III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp
US8168460B2 (en) 2006-12-20 2012-05-01 Showa Denko K.K. Method for manufacturing group III nitride compound semiconductor light-emitting device, group III nitride compound semiconductor light-emitting device, and lamp
JP2009123717A (ja) * 2006-12-22 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2010103578A (ja) * 2006-12-22 2010-05-06 Showa Denko Kk Ｉｉｉ族窒化物半導体層の製造方法
US8492186B2 (en) 2006-12-22 2013-07-23 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp
WO2008081717A1 (ja) * 2006-12-22 2008-07-10 Showa Denko K.K. Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2009081406A (ja) * 2007-09-27 2009-04-16 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
WO2009041256A1 (ja) * 2007-09-27 2009-04-02 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
US8592800B2 (en) 2008-03-07 2013-11-26 Trustees Of Boston University Optical devices featuring nonpolar textured semiconductor layers
JP2009283785A (ja) * 2008-05-23 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP2009283895A (ja) * 2008-12-15 2009-12-03 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体
JP2011082570A (ja) * 2011-01-11 2011-04-21 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法

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Publication number Publication date
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