JPH058527B2 - - Google Patents
Info
- Publication number
- JPH058527B2 JPH058527B2 JP61234149A JP23414986A JPH058527B2 JP H058527 B2 JPH058527 B2 JP H058527B2 JP 61234149 A JP61234149 A JP 61234149A JP 23414986 A JP23414986 A JP 23414986A JP H058527 B2 JPH058527 B2 JP H058527B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- transparent conductive
- conductive film
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 78
- 238000001704 evaporation Methods 0.000 claims description 50
- 238000010438 heat treatment Methods 0.000 claims description 47
- 230000008020 evaporation Effects 0.000 claims description 38
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 31
- 229910003437 indium oxide Inorganic materials 0.000 claims description 30
- 239000008188 pellet Substances 0.000 claims description 28
- 238000010894 electron beam technology Methods 0.000 claims description 26
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 238000007733 ion plating Methods 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 101
- 238000002834 transmittance Methods 0.000 description 29
- 238000007740 vapor deposition Methods 0.000 description 21
- 239000011521 glass Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 10
- 229910001887 tin oxide Inorganic materials 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61234149A JPS6389656A (ja) | 1986-10-01 | 1986-10-01 | 透明導電膜及びその生成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61234149A JPS6389656A (ja) | 1986-10-01 | 1986-10-01 | 透明導電膜及びその生成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6389656A JPS6389656A (ja) | 1988-04-20 |
| JPH058527B2 true JPH058527B2 (fr) | 1993-02-02 |
Family
ID=16966413
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61234149A Granted JPS6389656A (ja) | 1986-10-01 | 1986-10-01 | 透明導電膜及びその生成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6389656A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102959642B (zh) | 2010-05-12 | 2015-07-29 | 名阪真空工业株式会社 | 透明导电性基材 |
| JP5855948B2 (ja) * | 2012-01-12 | 2016-02-09 | ジオマテック株式会社 | 透明導電膜，透明導電膜付き基板，ｉｐｓ液晶セル，静電容量型タッチパネル及び透明導電膜付き基板の製造方法 |
| JP5712993B2 (ja) | 2012-12-10 | 2015-05-07 | 日立金属株式会社 | 接着性樹脂組成物並びにそれを用いた接着フィルム及びフラットケーブル |
| JP5999049B2 (ja) * | 2013-08-26 | 2016-09-28 | 住友金属鉱山株式会社 | 蒸着用タブレット及びその製造方法、並びに酸化物膜の製造方法 |
| JP6702039B2 (ja) * | 2016-07-05 | 2020-05-27 | 日亜化学工業株式会社 | 薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材 |
| JP6627828B2 (ja) * | 2017-07-19 | 2020-01-08 | 日亜化学工業株式会社 | 薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材 |
| JP2020030435A (ja) * | 2019-11-14 | 2020-02-27 | 日亜化学工業株式会社 | 薄膜形成材料、光学薄膜、及び光学部材 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61136954A (ja) * | 1984-12-06 | 1986-06-24 | 三井金属鉱業株式会社 | 焼結性に優れた酸化インジウム系焼結体 |
-
1986
- 1986-10-01 JP JP61234149A patent/JPS6389656A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61136954A (ja) * | 1984-12-06 | 1986-06-24 | 三井金属鉱業株式会社 | 焼結性に優れた酸化インジウム系焼結体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6389656A (ja) | 1988-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |