JPH058527B2 - - Google Patents

Info

Publication number
JPH058527B2
JPH058527B2 JP61234149A JP23414986A JPH058527B2 JP H058527 B2 JPH058527 B2 JP H058527B2 JP 61234149 A JP61234149 A JP 61234149A JP 23414986 A JP23414986 A JP 23414986A JP H058527 B2 JPH058527 B2 JP H058527B2
Authority
JP
Japan
Prior art keywords
substrate
film
transparent conductive
conductive film
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61234149A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6389656A (ja
Inventor
Shizuko Katsube
Koji Okuda
Masayuki Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daihen Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Daihen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Daihen Corp filed Critical Agency of Industrial Science and Technology
Priority to JP61234149A priority Critical patent/JPS6389656A/ja
Publication of JPS6389656A publication Critical patent/JPS6389656A/ja
Publication of JPH058527B2 publication Critical patent/JPH058527B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Surface Treatment Of Glass (AREA)
  • Physical Vapour Deposition (AREA)
JP61234149A 1986-10-01 1986-10-01 透明導電膜及びその生成方法 Granted JPS6389656A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61234149A JPS6389656A (ja) 1986-10-01 1986-10-01 透明導電膜及びその生成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61234149A JPS6389656A (ja) 1986-10-01 1986-10-01 透明導電膜及びその生成方法

Publications (2)

Publication Number Publication Date
JPS6389656A JPS6389656A (ja) 1988-04-20
JPH058527B2 true JPH058527B2 (enrdf_load_stackoverflow) 1993-02-02

Family

ID=16966413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61234149A Granted JPS6389656A (ja) 1986-10-01 1986-10-01 透明導電膜及びその生成方法

Country Status (1)

Country Link
JP (1) JPS6389656A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795786B2 (en) 2010-05-12 2014-08-05 Meihan Shinku Kogyo Co., Ltd. Transparent conductive substrate
JP5855948B2 (ja) * 2012-01-12 2016-02-09 ジオマテック株式会社 透明導電膜，透明導電膜付き基板，ｉｐｓ液晶セル，静電容量型タッチパネル及び透明導電膜付き基板の製造方法
JP5712993B2 (ja) 2012-12-10 2015-05-07 日立金属株式会社 接着性樹脂組成物並びにそれを用いた接着フィルム及びフラットケーブル
JP5999049B2 (ja) * 2013-08-26 2016-09-28 住友金属鉱山株式会社 蒸着用タブレット及びその製造方法、並びに酸化物膜の製造方法
JP6702039B2 (ja) * 2016-07-05 2020-05-27 日亜化学工業株式会社 薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材
JP6627828B2 (ja) 2017-07-19 2020-01-08 日亜化学工業株式会社 薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材
JP2020030435A (ja) * 2019-11-14 2020-02-27 日亜化学工業株式会社 薄膜形成材料、光学薄膜、及び光学部材

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136954A (ja) * 1984-12-06 1986-06-24 三井金属鉱業株式会社 焼結性に優れた酸化インジウム系焼結体

Also Published As

Publication number Publication date
JPS6389656A (ja) 1988-04-20

Similar Documents

Publication Publication Date Title
EP0636702B1 (en) Methods for producing functional films
US6383345B1 (en) Method of forming indium tin oxide thin film using magnetron negative ion sputter source
US6153271A (en) Electron beam evaporation of transparent indium tin oxide
KR20000071541A (ko) 투명 도전막 형성 및 해당 방법에 의해 형성된 투명 도전막
EP0385475A2 (en) Method of forming a transparent conductive film
KR100336621B1 (ko) 고분자 기판 위의 인듐산화물 또는 인듐주석산화물 박막증착 방법
US4428810A (en) Method and apparatus for depositing conducting oxide on a substrate
JPH058527B2 (enrdf_load_stackoverflow)
JPS6210269A (ja) 真空蒸着装置及び薄膜の製造方法
RU2241065C2 (ru) Способ нанесения проводящего прозрачного покрытия
JPH0329216A (ja) 透明電導膜の形成方法
JP4079457B2 (ja) インジウム−スズ酸化物膜の高抵抗化方法
Wakagi et al. Rapid heat treatment for spin coated ITO films by electron plasma annealing method
JP3095232B2 (ja) 透明導電膜の製造方法
JPH0723532B2 (ja) 透明導電膜の形成方法
JPS647445B2 (enrdf_load_stackoverflow)
JPS6128615B2 (enrdf_load_stackoverflow)
JPS61292817A (ja) 透明電導性金属酸化物膜の形成方法
JP2764899B2 (ja) 透明導電性膜の製造方法
JPH05171437A (ja) 透明導電膜の形成方法
JPH0273963A (ja) 低温基体への薄膜形成方法
JPH07107809B2 (ja) 透明導電膜の生成方法
JPH06135742A (ja) スズドープ酸化インジウム膜の高抵抗化方法
JPH07224374A (ja) スズドープ酸化インジウム膜の高抵抗化方法
JPH01219162A (ja) 酸化物薄膜の製造装置および製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term