JPH0580833B2 - - Google Patents
Info
- Publication number
- JPH0580833B2 JPH0580833B2 JP60081571A JP8157185A JPH0580833B2 JP H0580833 B2 JPH0580833 B2 JP H0580833B2 JP 60081571 A JP60081571 A JP 60081571A JP 8157185 A JP8157185 A JP 8157185A JP H0580833 B2 JPH0580833 B2 JP H0580833B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- type
- manufacturing
- film
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 16
- 230000007547 defect Effects 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 15
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60081571A JPS61240681A (ja) | 1985-04-17 | 1985-04-17 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60081571A JPS61240681A (ja) | 1985-04-17 | 1985-04-17 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61240681A JPS61240681A (ja) | 1986-10-25 |
| JPH0580833B2 true JPH0580833B2 (fr) | 1993-11-10 |
Family
ID=13749987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60081571A Granted JPS61240681A (ja) | 1985-04-17 | 1985-04-17 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61240681A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61240681A (ja) * | 1985-04-17 | 1986-10-25 | Res Dev Corp Of Japan | 半導体素子の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61240681A (ja) * | 1985-04-17 | 1986-10-25 | Res Dev Corp Of Japan | 半導体素子の製造方法 |
-
1985
- 1985-04-17 JP JP60081571A patent/JPS61240681A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61240681A (ja) * | 1985-04-17 | 1986-10-25 | Res Dev Corp Of Japan | 半導体素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61240681A (ja) | 1986-10-25 |
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