JPS6354212B2 - - Google Patents
Info
- Publication number
- JPS6354212B2 JPS6354212B2 JP12202782A JP12202782A JPS6354212B2 JP S6354212 B2 JPS6354212 B2 JP S6354212B2 JP 12202782 A JP12202782 A JP 12202782A JP 12202782 A JP12202782 A JP 12202782A JP S6354212 B2 JPS6354212 B2 JP S6354212B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusing
- region
- layer
- semiconductor substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 28
- 229910052698 phosphorus Inorganic materials 0.000 claims description 28
- 239000011574 phosphorus Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 230000002159 abnormal effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic or antimony Chemical compound 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12202782A JPS5913322A (ja) | 1982-07-15 | 1982-07-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12202782A JPS5913322A (ja) | 1982-07-15 | 1982-07-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5913322A JPS5913322A (ja) | 1984-01-24 |
| JPS6354212B2 true JPS6354212B2 (fr) | 1988-10-27 |
Family
ID=14825774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12202782A Granted JPS5913322A (ja) | 1982-07-15 | 1982-07-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5913322A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60145660A (ja) * | 1984-01-09 | 1985-08-01 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| DE3531631A1 (de) * | 1985-09-05 | 1987-03-05 | Licentia Gmbh | Asymmetrischer thyristor und verfahren zu seiner herstellung |
-
1982
- 1982-07-15 JP JP12202782A patent/JPS5913322A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5913322A (ja) | 1984-01-24 |
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