JPH0578944B2 - - Google Patents

Info

Publication number
JPH0578944B2
JPH0578944B2 JP59083726A JP8372684A JPH0578944B2 JP H0578944 B2 JPH0578944 B2 JP H0578944B2 JP 59083726 A JP59083726 A JP 59083726A JP 8372684 A JP8372684 A JP 8372684A JP H0578944 B2 JPH0578944 B2 JP H0578944B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
transistor
thin semiconductor
shot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59083726A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60229360A (ja
Inventor
Masatoshi Kimura
Kenji Kaneko
Takeaki Okabe
Mitsuzo Sakamoto
Kazuo Hoya
Isao Shimizu
Koichiro Satonaka
Toyomasa Koda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59083726A priority Critical patent/JPS60229360A/ja
Publication of JPS60229360A publication Critical patent/JPS60229360A/ja
Publication of JPH0578944B2 publication Critical patent/JPH0578944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59083726A 1984-04-27 1984-04-27 半導体装置 Granted JPS60229360A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59083726A JPS60229360A (ja) 1984-04-27 1984-04-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59083726A JPS60229360A (ja) 1984-04-27 1984-04-27 半導体装置

Publications (2)

Publication Number Publication Date
JPS60229360A JPS60229360A (ja) 1985-11-14
JPH0578944B2 true JPH0578944B2 (enrdf_load_stackoverflow) 1993-10-29

Family

ID=13810519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59083726A Granted JPS60229360A (ja) 1984-04-27 1984-04-27 半導体装置

Country Status (1)

Country Link
JP (1) JPS60229360A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60229360A (ja) 1985-11-14

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